光栅门控AlGaN/GaN二维电子气中的原位可调巨电各向异性
In-situ tunable giant electrical anisotropy in a grating gated AlGaN/GaN two-dimensional electron gas
AI总结：
本文提出通过光栅门控AlGaN/GaN二维电子气产生原位可调的巨电各向异性，利用正交电流方向下巨正、负磁阻的协同效应，为多端忆阻晶体管和仿生突触等新型器件提供基础。
摘要：
具有面内电各向异性的材料在设计人工突触器件方面具有巨大潜力。然而，具有强本征面内电各向异性的天然材料十分罕见。我们提出了一种简单的策略，通过对AlGaN/GaN半导体二维电子气（2DEG）进行光栅门控来产生极大的电各向异性。我们证明，2DEG中周期性调制的电势会诱导面内电各向异性，该各向异性在磁场中显著增强，从而产生超大电各向异性。这分别由两个正交取向的面内电流流动下的巨正磁阻和巨负磁阻所诱导。这种巨电各向异性可通过调节光栅门电压和磁场实现原位可调。我们这种具有可控巨电各向异性的半导体器件将推动新的器件应用，例如多端忆阻晶体管和仿生突触。
英文摘要：
Materials with in-plane electrical anisotropy have great potential for designing artificial synaptic devices. However, natural materials with strong intrinsic in-plane electrical anisotropy are rare. We introduce a simple strategy to produce extremely large electrical anisotropy via grating gating of a semiconductor two-dimensional electron gas (2DEG) of AlGaN/GaN. We show that periodically modulated electric potential in the 2DEG induces in-plane electrical anisotropy, which is significantly enhanced in a magnetic field, leading to an ultra large electrical anisotropy. This is induced by a giant positive magnetoresistance and a giant negative magnetoresistance under two orthogonally oriented in-plane current flows, respectively. This giant electrical anisotropy is in-situ tunable by tailoring both the grating gate voltage and the magnetic field. Our semiconductor device with controllable giant electrical anisotropy will stimulate new device applications, such as multi-terminal memtransistors and bionic synapses.
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