The ground-state energy and fine-structure splitting of ionized shallow donor impurity-exciton complex in quantum dots are investigated. It is found that fine-structure splitting could be largely reduced by the off-center ionized impurities since the anisotropic shape of exciton envelope function is significantly changed. Anomalous Stark shifts of the ground-state energy and efficient tuning of the fine-structure splitting by the external electric field due to the local electric field produced by the ionized impurities are discussed. The scheme may be useful for the design of the quantum dots-based entangled-photon source.
The ground state energy of exciton bound by distant ionized donor impurity in quasi-two-dimensional GaAs/AlGaAs semiconductor quantum well (QW) is studied theoretically within the Hartree approach in the effective mass approximation. The influence of the distance between QW plane and ionized donor, as well as of the magnetic field aligned across the QW plane and varying dielectric constant of the barrier material on the stability of exciton bound by ionized donor impurity is analyzed and discussed.
The ground state energy of exciton bound by distant ionized donor impurity in two-dimensional semiconductor quantum well (QW) is studied theoretically within the Hartree approach in the effective mass approximation. The influence of the distance between QW plane and ionized donor, as well as of the electron-hole mass ratio, the magnetic field aligned across the QW plane and dielectric constant of the barrier material on the stability of exciton bound by ionized donor impurity is analyzed and discussed.
An approach to calculation of the ionized impurity and surface roughness scattering rates of electrons in very thin semiconductor quantum wires taking into account the energy level broadening is worked out. It is assumed that all the electrons in the structure are in the electric quantum limit. The screening is taken into account while considering the ionized impurity scattering. Comparison of the surface roughness scat-tering rates calculated using the exponential and Gaussian autocorrelation functions is done.
Boltzmann diffusive transport including relaxation time and mobility in graphene limited by ionized impurity scattering is investigated. The relaxation time is evaluated with two different methods, first one directly use Boltzmann transport equation via scattering matrix, second one is based on scattering cross-section. Two methods yield the same relaxation time results for graphene. Assume linear Thomas-Fermi screening and a reasonable electron carrier density, relaxation time and mobility can be calculated and plotted, which demonstrates graphene is a very promising high mobility material fo…
Reduced electron screening in two-dimension plays a fundamental role in determining exciton properties, which dictates optoelectronic and photonic device performances. Considering the explicit electron-hole interaction within the $GW-$Bethe-Salpeter formalism, we first study the excitonic properties of pristine phosphorene and investigate the effects of strain and impurity coverage. The calculations reveal strongly bound exciton in these systems with anisotropic spatial delocalization. Further, we present a simplified hydrogenic model with anisotropic exciton mass and effective electron screen…
Anisotropic charge carrier transport in black phosphorus limited by ionized impurity scattering at finite temperature is explored theoretically. The anisotropic electronic structure enters the calculation for the polarizability (screening), the momentum relaxation time, and the mobility. For finite temperature, scattering is not limited to the Fermi surface and the polarizability is temperature dependent. The impact of screening is investigated in detail with its dependence on carrier density and temperature. Competing with the thermal excitation effects, the temperature dependence of the pola…
We show that by computing the electron-impurity scattering rate at the first order via Fermi's golden rule, and assuming that the localized impurity potential is of Yukawa form, one obtains a wave vector transfer distribution which is inconsistent with the finite temperature linearized Thomas-Fermi approximation for {\it n}-type semiconductors. Our previous findings show that this is not the case for the carrier nondegenerate dynamics, because the average wave vector transferred being in general negligible in this regime. Moreover, we examine the behavior of the electron-impurity differential …
We study the competition of hole capture between an In(Ga)As quantum dot and a directly adjacent ionized impurity in view of spin-photon interfaces. The Kerr rotation noise spectroscopy at 4.2 K shows that the hole-capture probability of the In(Ga)As quantum dot is about one order of magnitude higher compared to the hole-capture probability of the ionized impurity and suggests that a simultaneous occupation of quantum dot and impurity by a hole is efficiently suppressed due to Coulomb interaction. A theoretical model of interconnected spin and charge noise allows the quantitative specification…
A theory of the spin exciton capture by a magnetic impurity in a 2D electron gas is developed. We consider the resonance model for electron scattering by a transition metal impurity and calculate the binding potential for spin excitons. This potential is spin selective and is capable of binding a spin exciton with zero angular momentum. In order to trap an exciton with a nonzero angular momentum m, the potential must exceed a certain threshold value, depending on m.
We investigate transport properties of gate-all-around Si nanowires using non-equilibrium Green's function technique. By taking into account of the ionized impurity scattering we calculate Green's functions self-consistently and examine the effects of ionized impurity scattering on electron densities and currents. For nano-scale Si wires, it is found that, due to the impurity scattering, the local density of state profiles loose it's interference oscillations as well as is broaden and shifted. In addition, the impurity scattering gives rise to a different transconductance as functions of tempe…
We report on the vertical electron mobility versus temperature by applying the interface roughness scattering and ionized impurity scattering in InAs/GaSb superlattices. Using the Finite difference K.P method, we calculated the band structure of InAs/Gasb superlattices and then studied the transport properties of these systems. Several structural parameters such as layer thicknesses, interface roughness height, correlation length and ion density have been investigated and characterized that how the vertical mobility change with varying these parameters. Theoretical modeling results show that t…
The variety of excitonic states in tungsten-based dichalcogenide monolayers stems from unique interplay between the spin and valley degrees of freedom. One of the exciton species is the indirect exciton (momentum or valley dark), which is responsible to a series of resonances when the monolayer is charge neutral. We investigate the short-range electron-hole exchange interaction of the indirect exciton, as well as its recombination mechanism mediated by impurities. The analysis provides thorough understanding of the energy and polarization of the zero-phonon indirect exciton resonance in the em…
The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices at low temperatures. The interface roughness scattering and ionized impurity scattering are investigated as the dominant scattering mechanisms in limiting the electron transport at low temperatures. For this purpose, the band structures and wave functions of electrons in such superlattices are calculated by solving the K.P Hamiltonian using the numerical Finite Difference method. The scattering rates have obtained for different temperatures and structural parameters. We show that the scattering rates are high…
The effect of impurities which induce local interlayer tunneling in bilayer exciton condensates is discussed. We show that a localized single fermion bound state emerges inside the gap for any strength of impurity scattering and calculate the dependence of the impurity state energy and wave function on the potential strength. We show that such an impurity induced single fermion state enhances the interlayer coherence around it, and is similar to the superconducting proximity effect. As a direct consequence of these single impurity states, we predict that a finite concentration of such impuriti…
We have studied the exciton states in a CdTe quantum ring in an external magnetic field containing a single magnetic impurity. We have used the multiband approximation which includes the heavy hole - light hole coupling effects. The electron-hole spin interactions and the s, p-d interactions between the electron, hole and the magnetic impurity are also included. The exciton energy levels and optical transitions are evaluated using the exact diagonalization scheme. We show that due to the spin interactions it is possible to change the bright exciton state into the dark state and vice versa with…
We describe the behavior of a repulsively interacting Bose-Einstein condensate of indirect dipolar exciton gas in a double quantum well (QW) system under external static or dynamic electric fields at finite temperatures. Electrostatic perturbation is considered to be created by an impurity atom or shot-range defect of QW fluctuation. The screening of this defect potential by an exciton condensate is studied. We find asymptotic spatial dependence of the screened potential and analyse its dependence on the temperature and exciton concentration. It is shown that the asymptotic of the screened pot…
We investigate experimentally and theoretically few-particle effects in the optical spectra of single quantum dots (QDs). Photo-depletion of the QD together with the slow hopping transport of impurity-bound electrons back to the QD are employed to efficiently control the number of electrons present in the QD. By investigating structurally identical QDs, we show that the spectral evolutions observed can be attributed to intrinsic, multi-particle-related effects, as opposed to extrinsic QD-impurity environment-related interactions. From our theoretical calculations we identify the distinct trans…
Auger-ionized carriers in a one-dimensional semiconductor are predicted to result in a strong band-gap renormalization. Isolated single-walled carbon nanotubes (SWCNT) under high-intensity laser irradiation exhibit strong nonlinear photoluminescence (PL) due to exciton-exciton annihilation (EEA). The presence of exciton disassociation during the rapid Auger-ionization caused by EEA would lead to a strong nonlinear absorption. By simultaneously measuring SWCNT PL and optical absorption of isolated SWCNT clusters in the PL saturation regime, we give evidence that Auger-ionized excitons do not di…
We study the role of impurity scattering on the photoluminescence (PL) emission of polarized magnetoexcitons. We consider systems where both the electron and hole are confined on a ring structure (quantum rings) as well as on a type-II quantum dot. Despite their neutral character, excitons exhibit strong modulation of energy and oscillator strength in the presence of magnetic fields. Scattering impurities enhance the PL intensity on otherwise "dark" magnetic field windows and non-zero PL emission appears for a wide magnetic field range even at zero temperature. For higher temperatures, impurit…
We study the kinetics of 2D Bose gas cooling provided Bose particles interact with 3D phonons. At low temperatures phonon emission is prohibited by the energy and the momentum conservation. We show that both particle-particle scattering and impurity scattering assist the Bose gas cooling.
We report on the resonant optical pumping of the |\pm1> spin states of a single Mn dopant in an InAs/GaAs quantum dot embedded itself in a charge tuneable device. The experiment relies on a "W" scheme of transitions reached when a suitable longitudinal magnetic field is applied. The optical pumping is achieved via the resonant excitation of the central Λ system at the neutral exciton X0 energy. For a specific gate voltage, the red-shifted photoluminescence of the charged exciton X- is observed, which allows non-destructive readout of the spin polarization. An arbitrary spin preparation in the …
Low-Energy Purification of Crystal Defects by Rydberg Excitons
Department of Chemistry, Purdue University（普渡大学化学系）；Institute for Molecules and Materials, Radboud University（拉德堡德大学分子与材料研究所）；Department of Physics and Astronomy, Purdue University（普渡大学物理与天文学系）；Purdue Quantum Science and Engineering Institute, Purdue University（普渡大学量子科学与工程研究所）
III-V nanostructures have the potential to revolutionize optoelectronics and energy harvesting. For this to become a reality, critical issues such as reproducibility and sensitivity to defects should be resolved. By discussing the optical properties of MBE grown GaAs nanomembranes we highlight several features that bring them closer to large scale applications. Uncapped membranes exhibit a very high optical quality, expressed by extremely narrow neutral exciton emission, allowing the resolution of the more complex excitonic structure for the first time. Capping of the membranes with an AlGaAs …
Comparative studies of the resonant transmission of light in the vicinity of exciton resonances, measured for 15 few-micron GaAs crystal slabs with different impurity concentrations $N$, reveal an unexpected tendency. While $N$ spans almost five decimal orders of magnitude, the normalized spectrally-integrated absorption of light scales with the impurity concentration as $N^{1/6}$. We show analytically that this dependence is a signature of the diffusive mechanism of propagation of exciton-polaritons in the semiconductor.
Doping a semiconductor quantum dot with just a single impurity atom can completely transform its physical properties. Here, we report and analyze the magnetic circular dichroism (MCD) spectra of colloidal CdSe quantum dot samples containing on average fewer than one Mn2+ per quantum dot. Even at this sub-single-dopant level, the low-temperature low-field data are dominated by impurity-induced Zeeman splittings caused by dopant-carrier sp-d exchange. Unlike in more heavily doped quantum dots, however, the MCD intensity at the first CdSe exciton shows a field-induced sign flip as the field stren…
Dynamical magnetic and nuclear polarization in complex spin systems is discussed on the example of transfer of spin from exciton to the central spin of magnetic impurity in a quantum dot in the presence of a finite number of nuclear spins. The exciton is described in terms of the electron and heavy hole spins interacting via exchange interaction with magnetic impurity, via hypeprfine interaction with a finite number of nuclear spins and via dipole interaction with photons. The time-evolution of the exciton, magnetic impurity and nuclear spins is calculated exactly between quantum jumps corresp…
The absorption of electromagnetic radiation of an anisotropic quantum dot is theoretically investigated taking into account the processes associated with simultaneous scattering from ionized impurities. It is shown that the scattering of electrons by impurities leads to the resonance absorption even if we have only one impurity in the quantum dot. Explicit formula is derived for the absorption coefficient. The positions of the resonances peaks are found. The effects of external magnetic field on the resonance absorption are studied.
Quantum kinetic equations of motion for the description of the exciton spin dynamics in II-VI diluted magnetic semiconductor quantum wells with laser driving are derived. The model includes the magnetic as well as the nonmagnetic carrier-impurity interaction, the Coulomb interaction, Zeeman terms, and the light-matter coupling, allowing for an explicit treatment of arbitrary excitation pulses. Based on a dynamics-controlled truncation scheme, contributions to the equations of motion up to second order in the generating laser field are taken into account. The correlations between the carrier an…
We studied, theoretically, the optical absorption spectra for a slightly asymmetric double quantum well (DQW), in the presence of electric and magnetic fields. Recent experimental results for a 10.18/3.82/9.61 nm GaAs Al(_{.33} )Ga(_{.67})As DQW show clearly the different behavior in the luminescence peaks for the indirect exciton (IX) and left direct exciton (DX) as a function of the external electric field. We show that the presence of a peak near the (DX) peak, attributed to an impurity bound left (DX) in the experimental results, could be a consequence of the non-trivial mixing between exc…
A promising method to investigate dark exciton transitions in quantum dots is presented. The optical recombination of the dark exciton is allowed when the exciton state is coupled with an individual magnetic impurity (manganese ion). It is shown that the efficient radiative recombination is possible when the exchange interaction with the magnetic ion is accompanied by a mixing of the heavy-light hole states related to an in-plane anisotropy of the quantum dot. It is also shown that the dark exciton recombination is an efficient channel of manganese spin orientation.
The electron and hole states in a CdTe quantum dot containing a single magnetic impurity in an external magnetic field are investigated, using the multiband approximation which includes the heavy hole-light hole coupling effects. The electron-hole spin interactions and s,p-d interactions between the electron, the hole and the magnetic impurity are also included. The exciton energy levels and optical transitions are evaluated using the exact diagonalization scheme. A novel mechanism is proposed here to manipulate impurity-spin in the quantum dot which allows us to drive selectively the spin of …
Due to their unique two-dimensional nature, charge carriers in semiconducting transition metal dichalcogenides (TMDs) exhibit strong unscreened Coulomb interactions and sensitivity to defects and impurities. The versatility of van der Waals layer stacking allows spatially separating electrons and holes between different TMD layers with staggered band structure, yielding interlayer few-body excitonic complexes whose nature is still debated. Here we combine quantum Monte Carlo calculations with spectrally and temporally resolved photoluminescence measurements on a top- and bottom-gated MoSe2/WSe…
As an alternative to commonly used electrical methods, we have investigated the optical pumping of charged exciton complexes addressing impurity related transitions with photons of the appropriate energy. Under these conditions, we demonstrate that the pumping fidelity can be very high while still maintaining a switching behavior between the different excitonic species. This mechanism has been investigated for single quantum dots of different size present in the same sample and compared with the direct injection of spectator electrons from nearby donors.
We first predict the splitting of a spin degenerate impurity level when this impurity is irradiated by a circularly polarized laser beam tuned in the transparency region of a semiconductor. This splitting, which comes from different exchange processes between the impurity electron and the virtual pairs coupled to the pump beam, induces a spin precession around the laser beam axis, which lasts as long as the pump pulse. It can thus be used for ultrafast spin manipulation. This effect, which has similarities with the exciton optical Stark effect we studied long ago, is here derived using the con…
Using a nonlinear Schrödinger equation including short-range two-body attraction and three-body repulsion, we investigate the spatial distribution of indirect excitons in semiconductor coupled quantum wells. The results obtained can interpret the experimental phenomenon that annular exciton cloud first contracts then expands when the number of confined excitons is increased in impurity potential well, as observed by Lai \emph{et al.} [Lai $et al.$, Science \textbf{303}, 503 (2004)]. In particular, the model reconciles the patterns of exciton rings reported by Butov \emph{et al.} [Butov $et al.…
In samples used to maintain the US resistance standard the breakdown of the dissipationless integer quantum Hall effect occurs as a series of dissipative voltage steps. A mechanism for this type of breakdown is proposed, based on the generation of magneto-excitons when the quantum Hall fluid flows past an ionised impurity above a critical velocity. The calculated generation rate gives a voltage step height in good agreement with measurements. We also compare this model to a hydrodynamic description of breakdown.
Indirect excitons in coupled quantum wells have long radiative lifetimes and form a cold quasi-two-dimensional population suitable for studying collective quantum effects. Here we report the observation of the exciton Mott transition from an insulating (excitons) to a conducting (ionized electron-hole pairs) phase, which occurs gradually as a function of carrier density and temperature. The transition is inferred from spectral and time-resolved photoluminescence measurements around a carrier density of $2\times10^{10} \mathrm{cm}^{-2}$ and temperatures of $12-16 \mathrm{K}$. An externally appl…
We present the findings of high efficient light absorption in self-assembled quantum wells (SQW) embedded in silicon microcavities that exhibit a distributed feedback identified by the FIR transmission spectra. The excitonic normal-mode coupling (NMC) is found to result in high efficient bound exciton photoluminescence in the range of the Rabi splitting. The bound excitons at the iron-boron pair and the erbium-related centers inserted in SQW are shown to cause giant exchange splitting of the center multiplets as a result of the strong sp-d and sp-f mixing in the absence of the external magneti…
We theoretically investigate the impact of excited states on the dynamics of the exciton ground state in diluted magnetic semiconductor quantum wells. Exploiting the giant Zeeman shift in these materials, an external magnetic field is used to bring transitions between the exciton ground state and excited states close to resonance. It turns out that, when treating the exciton dynamics in terms of a quantum kinetic theory beyond the Markov approximation, higher exciton states are populated already well below the critical magnetic field required to bring the exciton ground state in resonance to a…
Phonons are well known to be the main mechanism for the coupling between bright and dark excitons in nonmagnetic semiconductors. Here, we investigate diluted magnetic semiconductors where this process is in direct competition with the scattering at localized magnetic impurities. To this end, a recently developed quantum kinetic description of the exciton spin dynamics in diluted magnetic semiconductor quantum wells is extended by the scattering with longitudinal acoustic phonons. A strong phonon impact is found in the redistribution of exciton momenta on the exciton parabola that becomes espec…
The dynamics of a mobile quantum impurity in a degenerate Fermi system is a fundamental problem in many-body physics. The interest in this field has been renewed due to recent ground-breaking experiments with ultra-cold Fermi gases. Optical creation of an exciton or a polariton in a two-dimensional electron system embedded in a microcavity constitutes a new frontier for this field due to an interplay between cavity-coupling favoring ultra-low mass polariton formation and exciton-electron interactions leading to polaron or trion formation. Here, we present cavity spectroscopy of gate-tunable mo…
Magnetically doped semiconductors are well known for their giant Zeeman splittings which can reach several meV even in relatively small external magnetic fields. After preparing a nonequilibrium exciton distribution via optical excitation, the spin dynamics in diluted magnetic semiconductor quantum wells is typically governed by spin-flip scattering processes due to the exciton-impurity exchange interaction. Our theoretical calculations show that the giant Zeeman splitting in these materials in combination with the influence of longitudinal acoustic phonons lead to a quantum ratchet-type dynam…
We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2-50 K. The temperature dependence of the QH plateau-plateau transition (PPT) widths and of variable range hopping (VRH) conduction on the Hall plateaus are analyzed. The data are presented in a genuine scale form both for PPT regions and for VRH regime. Estimations for the degree of the carrier localization length divergence reveal a decisive role of the long-range random potential (the …
We observe unusually narrow donor-bound exciton transitions (0.4 meV) in the photoluminescence spectra of GaN nanowire ensembles grown on Si(111) substrates at very high (> 850 degrees Celsius) temperatures. The spectra of these samples reveal a prominent transition of excitons bound to neutral Si impurities which is not observed for samples grown under standard conditions. Motivated by these experimental results, we investigate theoretically the impact of surface-induced internal electric fields on the binding energy of donors by a combined Monte Carlo and envelope function approach. We obtai…
Magnetic tuning of the bound exciton states and corresponding giant Zeeman splitting (GZS) between σ^{+} and σ^{-} excitonic transitions in CdTe/Cd_{1-x}Mn_{x}Te quantum ring has been investigated in the Faraday configuration for various concentrations of Mn^{2+} ions, using the variational technique in the effective mass approximation. The sp-d exchange interaction between the localized magnetic impurity ions and the delocalized charge carriers has been accounted via mean-field theory with the inclusion of a modified Brillouin function. The enhancement of the GZS, and in turn, the effective g…
We show theoretically and experimentally the existence of a new quantum interference(QI) effect between the electron-hole interactions and the scattering by a single Mn impurity. Theoretical model, including electron-valence hole correlations, the short and long range exchange interaction of Mn ion with the heavy hole and with electron and anisotropy of the quantum dot, is compared with photoluminescence spectroscopy of CdTe dots with single magnetic ions. We show how design of the electronic levels of a quantum dot enable the design of an exciton, control of the quantum interference and hence…
The signature of defects in the optical spectra of hexagonal boron nitride (BN) is investigated using many body perturbation theory. A single BN-sheet serves as a model for different layered BN- nanostructures and crystals. In the sheet we embed prototypical defects such as a substitutional impurity, isolated Boron and Nitrogen vacancies, and the di-vacancy. Transitions between the deep defect levels and extended states produce characteristic excitation bands that should be responsible for the emission band around 4 eV, observed in luminescence experiments. In addition, defect bound excitons o…
Tightly bound excitons in monolayer semiconductors represent a versatile platform to study two-dimensional propagation of neutral quasiparticles. Their intrinsic properties, however, can be severely obscured by spatial energy fluctuations due to a high sensitivity to the immediate environment. Here, we take advantage of the encapsulation of individual layers in hexagonal boron nitride to strongly suppress environmental disorder. Diffusion of excitons is then directly monitored using time- and spatially-resolved emission microscopy at ambient conditions. We consistently find very efficient prop…
Anderson impurity model for semiconductor quantum dot is extended to take into account both particle and hole branches of charge excitations. It is shown that in dots with even number of electrons where the Kondo effect is absent in the ground state, novel midgap excitonic states emerge in the energy spectrum due to Kondo-type shake-up processes. The relevance of the model to rare earth ions adsorbed on metallic surfaces is discussed.
We report on a study of the quasielectron-quasihole and skyrmion-antiskyrmion bound states in the $ν=1$ quantum Hall regime. The short range attraction potential is assumed to be determined by a point magnetic impurity. The calculations are performed within the strong field approximation when the binding energy and the characteristic electron-electron interaction energy are smaller than the Landau level spacing. The Excitonic Representation technique is used in that case.
We generalize the hierarchical equations of motion method to study electron transport through a quantum dot or molecule coupled to one-dimensional interacting leads that can be described as Luttinger liquids. Such leads can be realized, for example, by quantum wires or fractional quantum Hall edge states. In comparison to noninteracting metallic leads, Luttinger liquid leads involve many-body correlations and the single-particle tunneling density of states shows a power-law singularity at the chemical potential. Using the generalized hierarchical equations of motion method, we assess the impor…
Atomic layers of Black Phosphorus (BP) present unique opto-electronic properties dominated by a direct tunable bandgap in a wide spectral range from visible to mid-infrared. In this work, we investigate the infrared photoluminescence of BP single crystals at very low temperature. Near-bandedge recombinations are observed at 2 K, including dominant excitonic transitions at 0.276 eV and a weaker one at 0.278 eV. The free-exciton binding energy is calculated with an anisotropic Wannier-Mott model and found equal to 9.1 meV. On the contrary, the PL intensity quenching of the 0.276 eV peak at high …
We report on the selective excitation of single impurity-bound exciton states in a GaAs double quantum well (DQW). The structure consists of two quantum wells (QWs) coupled by a thin tunnel barrier. The DQW is subject to a transverse electric field to create spatially indirect inter-QW excitons with electrons and holes located in different QWs. We show that the presence of intra-QW charged excitons (trions) blocks carrier tunneling across the barrier to form indirect excitons, thus opening a gap in their emission spectrum. This behavior is attributed to the low binding energy of the trions. Wi…
We investigate the effect of many-body interactions on the optical absorption spectrum of a charge-tunable quantum dot coupled to a degenerate electron gas. A constructive Fano interference between an indirect path, associated with an intra dot exciton generation followed by tunneling, and a direct path, associated with the ionization of a valence-band quantum dot electron, ensures the visibility of the ensuing Fermi-edge singularity despite weak absorption strength. We find good agreement between experiment and renormalization group theory, but only when we generalize the Anderson impurity mo…
