窄量子阱中远距离离化施主束缚的二维激子
On two-dimensional exciton bound by distant ionized-donor in a narrow quantum well
摘要：
在有效质量近似下，采用Hartree方法研究了二维半导体量子阱中远电离施主杂质束缚激子的基态能量.分析和讨论了量子阱面与电离施主的距离、电子空穴质量比、跨量子阱面的磁场以及势垒材料的介电常数对电离施主杂质束缚激子稳定性的影响。
英文摘要：
The ground state energy of exciton bound by distant ionized donor impurity in two-dimensional semiconductor quantum well (QW) is studied theoretically within the Hartree approach in the effective mass approximation. The influence of the distance between QW plane and ionized donor, as well as of the electron-hole mass ratio, the magnetic field aligned across the QW plane and dielectric constant of the barrier material on the stability of exciton bound by ionized donor impurity is analyzed and discussed.
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