The Hall resistivity, electrical resistivity and magnetization of single crystals of the tetragonal ferromagnet Yb14MnSb11 are reported as a function of the direction of the current, I, and magnetic field, H with respect to the principal crystallographic axes. With I along the unique c direction and H in the a-b plane, the anomalous Hall resistivity in the limit of zero applied field is negative for all temperatures T less than Tc= 53 K. In this direction, the anomalous Hall effect behaves in a manner similar to that observed in other ferromagnets such as Fe, Co, Mn5Ge3, and EuFe4Sb12. However, with I in the a-b plane and H along the c direction, the anomalous Hall behavior is completely different. The anomalous Hall resistivity data are positive for all T less than Tc and a similar analysis of these data fails. In this direction, the anomalous response is not a simple linear function of the magnetization order parameter, and for a fixed temperature (T less than Tc) does not depend on the magnitude of the magnetization perpendicular to the current in the a-b plane. That is, when the magnetization and applied field are rotated away from the c direction, the anomalous Hall resistivity does not change. In all other soft ferromagnets that we have examined (including La doped crystals of Yb14MnSb11, i.e. Yb13.3La0.7MnSb11) rotation of the magnetization and magnetic field by an angle theta away from a direction perpendicular to I results in a decrease in both the anomalous and normal portions of the Hall resistivity that approximately scales as cos(theta). We suggest that the unique response exhibited by Yb14MnSb11 is a direct reflection of the delicate balance between ferromagnetism and Kondo screening.
Comparison of experimental data and theoretical calculations for electrical resistivity and Hall coefficient in quasi-one-dimensional organic conductor (TMTSF)2PF6
最近由Moser等人测量的霍尔系数和电阻率的温度依赖性。84，2674（2000）]中的准一维有机导体（TMTSF）2 PF 6的计算结果与我们以前的理论计算[Synth. Met. 103，2202（1999）; Eur. J. B 11，385（1999）]。我们发现一个很好的协议，虽然不是一个完全一致的参数集的两个数量，没有呼吁Luttinger液体的概念。
Anomalous Hall effect in trigonal Cr$_5$Te$_8$ single crystal
报道了三方晶系Cr $_5$ Te $_8$（tr-Cr $_5$ Te $_8$）单晶的反常霍尔效应（AHE）和输运性质。电阻率以及塞贝克系数显示出在tr-Cr $_5$ Te $_8$的顺磁-铁磁转变处的明显扭结，这也由热容测量证实。异常霍尔电阻率$ρ^A_{xy}$和纵向电阻率$ρ_{xx}$之间的标度行为在低于$T_c$时是线性的。进一步的分析表明，在tr-Cr $_5$ Te $_8$的AHE是由倾斜散射机制，而不是本征或非本征侧跳机制占主导地位。
计算了大隧穿电导$g_{T}\gg 1$下颗粒体系的霍尔电导率$\sig_{xy}$和电阻率$ρ_{xy}$。我们表明，在库仑相互作用的情况下，霍尔电阻率既不依赖于隧道电导，也不依赖于晶粒内的无序，并给出了由经典公式$ρ_{xy}=H/(n^* e c)$，其中$n^*$不同于晶粒内的载流子密度$n$的数值系数由晶粒的形状。库仑相互作用在$\Ga \lesssim T \lesssim \min(g_T E_c,\ETh)$范围内产生对$ρ_{xy}$的对数温度$T$修正，其中$\Ga$是隧道逃逸率，$E_c$是充电能量，$\ETh$是晶粒的无磁能量。
Investigating the origin of topological-Hall-like resistivity in Zn-doped Mn2Sb ferrimagnet
East China Normal University（华东师范大学）；Anhui University（安徽大学）；Shanghai Institute of Technical Physics, Chinese Academy of Sciences（中国科学院上海技术物理研究所）；Shanghai Jiao Tong University（上海交通大学）；University of Science and Technology of China（中国科学技术大学）
Anomalous Hall effect in weak-itinerant ferrimagnet FeCr$_2$Te$_4$
我们对FeCr $_2$ Te $_4$单晶的电子输运、热学和热力学性质进行了全面的研究。在$T_c$ $\sim$ 123 K以下的弱巡游顺磁-亚铁磁转变下，表现出不良金属行为和反常霍尔效应（AHE）。反常霍尔电阻率$ρ_{xy}$和纵向电阻率$ρ_{xx}$之间的线性标度表明FeCr $_2$ Te $_4$中的AHE很可能是由非本征斜散射机制而不是本征KL或非本征侧跳机制所主导的，这一点得到了Berry相位计算的支持。
Hall conductivity reveals the nature of quantum coherence in strongly correlated metals
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory（斯坦福材料能源科学研究所，SLAC国家加速器实验室）；Department of Materials Science and Engineering, Stanford University（斯坦福大学材料科学与工程系）
Thermal Hall Resistivity as a Unifying Description of Phonon Thermal Hall Effect in Various Insulators
Nanyang Technological University（南洋理工大学）；National High Magnetic Field Laboratory, Los Alamos National Laboratory（洛斯阿拉莫斯国家实验室国家高磁场实验室）；National High Magnetic Field Laboratory（国家高磁场实验室）；Institute of Science Tokyo（东京科学大学）；National Institute of Advanced Industrial Science and Technology（产业技术综合研究所）
Spin-Glass-like Transition and Hall Resistivity of Y2-xBixIr2O7
研究了烧绿石氧化物Y2-xBixIr 2 O 7的各种物理性质。在零场冷却（ZFC）和场冷却（FC）条件下测量的磁化强度M在温度T=TG以下具有不同的值。在TG附近观察到的电致伸缩率r和热电功率S的异常T依赖性表明磁化行为是由于自旋冻结状态的转变。在这种自旋冻结状态下，用ZFC和FC条件测量的霍尔折射率rH在低温阶段（T<TG）也有不同的值。引起这种滞后行为的可能机制进行了讨论。
Carrier-doping effect and anomalous transport properties in Ni-doped CeCoIn5 investigated by Hall resistivity measurements
College of Science, Ibaraki University（茨城大学理学部）；Institute for Solid State Physics, The University of Tokyo（东京大学固体物理研究所）；Institute for Materials Research, Tohoku University（东北大学材料科学高等研究所）；Faculty of Education, Shinshu University（信州大学教育学部）
Thermal Hall resistivity and transverse entropy production in a phonon gas
Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology（华中科技大学物理学院）；CPHT, CNRS, École polytechnique, Institut Polytechnique de Paris（巴黎理工学院）；Laboratoire de Physique et d’Étude de Matériaux (CNRS) ESPCI Paris, PSL Research University（巴黎高等物理化工大学）
