热霍尔电阻率作为各种绝缘体中声子热霍尔效应的统一描述
Thermal Hall Resistivity as a Unifying Description of Phonon Thermal Hall Effect in Various Insulators
AI总结：
研究各种绝缘体中的声子热霍尔效应，以掺杂的莫特绝缘体La$_{5/3}$Sr$_{1/3}$NiO$_4$为例，通过热霍尔电阻率$w_{xy}$的特性揭示其可作为该效应的统一描述，且与材料局域电子态相关。
AI中文摘要：
最近在各种材料中发现了显著的声子热霍尔效应。为阐明各种绝缘体中这种神秘的热霍尔响应，我们研究了掺杂的莫特绝缘体La$_{5/3}$Sr$_{1/3}$NiO$_4$这一示例材料体系，揭示了以声子为主导的特征热霍尔效应。热霍尔电阻率$w_{xy}$作为横向热响应的灵敏探针，呈现出类似绝缘体的温度依赖性$w_{xy}(T)$、在$H = 0$附近的线性磁场依赖性$w_{xy}(H)$以及低温下的$T$线性热霍尔角。一系列绝缘体中类似现象的存在表明$w_{xy}$可作为声子热霍尔效应的统一描述，这由类似绝缘体的$w_{xy}(T)$与材料局域电子态之间的明显相关性所证实。
英文摘要：
A considerable phonon thermal Hall effect was recently discovered across a diverse collection of materials. To clarify this enigmatic thermal Hall response in various insulators, we investigate the doped Mott insulator La$_{5/3}$Sr$_{1/3}$NiO$_4$ as an example material system and reveal a characteristic phonon-dominated thermal Hall effect. As a sensitive probe of the transverse thermal response, the thermal Hall resistivity $w_{xy}$ exhibits an insulating-like temperature dependence $w_{xy}(T)$, a linear magnetic-field dependence $w_{xy}(H)$ near $H=0$, and a $T$-linear thermal Hall angle at low temperatures. The presence of similar phenomena across a series of insulators suggests that $w_{xy}$ serves as a unifying description of phonon thermal Hall effect, corroborated by an apparent correlation between the insulating-like $w_{xy}(T)$ and material's localized electronic state.
