织构FeGe薄膜的散射机制：磁电阻和反常霍尔效应
Scattering mechanisms in textured FeGe thin films: magnetoresistance and the anomalous Hall effect
摘要：
用磁控溅射法生长了取向的FeGe薄膜，其螺旋磁有序温度为TN = 276 +/-2K。从5 K到室温的各种散射过程有助于对整体的纵向和霍尔介电常数。这些研究相结合的磁力和磁输运测量。高场磁电阻（MR）显示三个清晰的温度制度：洛伦兹力MR在低温下占主导地位，在T ~ 80 K以上，来自自旋波的散射占主导地位，而最后对于T > 200 K，来自波动局部矩的散射描述了MR。在低场，其中磁化强度在技术上不再饱和，我们发现磁阻与磁化强度的平方成比例，这表明由于锥形相中自旋的解绕而引起的MR是由与磁畴壁中的MR类似的机制引起的。这种磁电阻只有在200 K左右的温度下才能看到。在纵向电阻率的温度或场依赖性中，没有发现与TN处的潜在磁相变的存在相矛盾的特征：行为的显著变化是在低得多的温度下。异常的霍尔效应具有显着的温度依赖性，其中异常的霍尔电阻率与纵向电阻率成二次比例：与异常霍尔比例理论的比较表明，我们的系统是在固有的“适度脏”制度。最后，我们发现了一个拓扑霍尔效应的大小为100欧姆厘米的证据。
英文摘要：
A textured thin film of FeGe was grown by magnetron sputtering with a helimagnetic ordering temperature of TN = 276 +/- 2 K. From 5 K to room temperature a variety of scattering processes contribute towards the overall longitudinal and Hall resistivities. These were studied by combining magnetometry and magnetotransport measurements. The high-field magnetoresistance (MR) displays three clear temperature regimes: Lorentz force MR dominates at low temperatures, above T ~ 80 K scattering from spin-waves predominates, whilst finally for T > 200 K scattering from fluctuating local moments describes the MR. At low fields, where the magnetisation is no longer technically saturated, we find a scaling of magnetoresistance with the square of the magnetisation, indicating that the MR due to the unwinding of spins in the conical phase arises from a similar mechanism to that in magnetic domain walls. This MR is only visible up to a temperature of about 200 K. No features can be found in the temperature or field dependence of the longitudinal resistivity that belie the presence of the underlying magnetic phase transition at TN: the marked changes in behavior are at much lower temperatures. The anomalous Hall effect has a dramatic temperature dependence in which the anomalous Hall resistivity scales quadratically with the longitudinal resistivity: comparison with anomalous Hall scaling theory shows that our system is in the intrinsic 'moderately dirty' regime. Lastly, we find evidence of a topological Hall effect of size 100 ~Ohm cm.
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