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arXiv 0706.0184cond-mat.str-el
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LaMnO $_3$中的压力诱导绝缘体-金属转变

Pressure induced Insulator-Metal transition in LaMnO$_3$

Javier D. Fuhr, Blas Alascio, Michel Avignon

摘要:

绝缘体到金属转变(IMT)的最新观察[I. Loa等,PRL 87,125501(2001)]在纯LaMnO $_3$中在32 GPa和室温下,远高于Neel温度(145 K)和低于Jahn-Teller转变温度(780 K),为研究轨道自由度对化学计量材料中电子结构的作用开辟了道路。在本文中,我们集中我们的注意力在轨道方面的绝缘体到金属过渡。我们使用的模型哈密顿的$e_g$轨道的Mn,其中包括在现场库仑排斥$U$,跳跃$t$,其与压力的依赖性。为了包括在一个适当的方式,由主导的电子-电子相互作用引起的强关联,我们引入辅助场(从属玻色子,SB)的低能态的描述。我们使用O-Mn距离($d$)依赖性的$t$和压力- $d$的关系从实验数据来描述的电子结构随压力的演变。我们的研究结果证实并透明的结论在以前的从头计算:库仑能量的列入是必要的,并构成了一个重要的因素,提高这些化合物的轨道极化。

英文摘要:

The recent observation of a insulator to metal transition (IMT) [I. Loa et al, PRL 87, 125501 (2001)] in pure LaMnO$_3$ at 32 GPa and room temperature, well above the Neel temperature (145 K) and below the Jahn-Teller transition temperature (780 K), opens the way to a study of the role of the orbital degrees of freedom on the electronic structure in a stoichiometric material. In this paper we focus our attention in the orbital aspects of the insulator to metal transition. We use a model Hamiltonian for the $e_g$ orbitals of Mn that includes the on site Coulomb repulsion $U$, the hopping $t$, and its dependence with pressure. In order to include in an appropriate way the strong correlations induced by the dominant electron-electron interactions we introduce auxiliary fields (Slave Bosons,SB) to the description of the low energy states. We use a O-Mn distance ($d$) dependence of $t$ and the pressure-$d$ relation from the experimental data to describe the evolution of the electronic structure with pressure. Our results confirm and make transparent the conclusion reached in previous ab-initio calculations: the inclusion of the Coulomb energy is necessary and constitutes an important factor enhancing the orbital polarization in these compounds.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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