The readout of the quantum spin state is a challenge for any spin-based quantum computing implementation. We propose a scheme, based on the achieved technique of single electron transistor (SET), to implement the readout of electronic spin state inside a doped $C_{60}$ fullerene by means of the magnetic dipole-dipole coupling and spin filters. In the presence of an external magnetic field, we show how to perform the spin state detection by transforming the information contained in the spin state into the tunneling current. The robustness of our scheme against sources of error is discussed.
We consider to detect the electron spin of a doped atom, i.e., a nitrogen or a phosphorus, caged in a fullerene by currently available technique of the scanning tunneling microscope (STM), which actually corresponds to the readout of a qubit in the fullerene-based quantum computing. Under the conditions of polarized STM current and Coulomb blockade, we investigate the tunneling matrix elements involving the exchange coupling between the tunneling polarized electrons and the encapsulated polarized electron, and calculate the variation of the tunneling current with respect to different orientati…
A potential quantum information processor is proposed using a fullerene peapod, i.e., an array of the endohedral fullerenes 15N@C60 or 31P@C60 contained in a single walled carbon nanotube (SWCNT). The qubits are encoded in the nuclear spins of the doped atoms, while the electronic spins are used for initialization and readout, as well as for two-qubit operations.
We propose two potentially practical schemes to carry out two-qubit quantum gates on endohedral fullerenes $N@C_{60}$ or $P@C_{60}$. The qubits are stored in electronic spin degrees of freedom of the doped atom $N$ or $P$. By means of the magnetic dipolar coupling between two neighboring fullerenes, the two-qubit controlled-NOT gate and the two-qubit conditional phase gate are performed by selective microwave pulses assisted by refocusing technique. We will discuss the necessary additional steps for the universality of our proposal. We will also show that our proposal is useful for both quantu…
Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offer potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-transistor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large scale circui…
Operating the cavity-embedded Cooper pair transistor (cCPT) in the Kerr bistable regime, we demonstrate single-shot resolution between two charge states that are $0.09e$ apart. The measurement is performed with 94$\%$ fidelity in a duration of 3 $μ$s. The drive power at which the measurement is performed corresponds to only 20 intracavity photons on average in the high oscillation amplitude state of the cCPT, which is orders-of-magnitude smaller than that in rf-SETs. We find that the limiting factor for this mode of operation of the cCPT is the spontaneous fluctuation-induced switching between…
Several physical realizations of quantum bits have been proposed. Of those, nano-electronic devices appear most suitable for large-scale integration and potential applications. We suggest to use low-capacitance Josephson junctions, exploiting the coherence of tunneling in the superconducting state combined with the possibility to control individual charges by Coulomb blockade effects (cond-mat/9706016,cond-mat/9808067). These systems constitute quantum bits, with logical states differing by one Cooper-pair charge. Single- and two-bit operations can be performed by applying a sequence of gate v…
We present a scheme to perform universal quantum computation using global addressing techniques as applied to a physical system of endohedrally doped fullerenes. The system consists of an ABAB linear array of Group V endohedrally doped fullerenes. Each molecule spin site consists of a nuclear spin coupled via a Hyperfine interaction to an electron spin. The electron spin of each molecule is in a quartet ground state $S=3/2$. Neighboring molecular electron spins are coupled via a magnetic dipole interaction. We find that an all-electron construction of a quantum cellular automata is frustrated …
In the design of quantum computer architectures that take advantage of the long coherence times of dopant nuclear and electron spins in the solid-state, single-spin detection for readout remains a crucial unsolved problem. Schemes based on adiabatically induced spin-dependent electron tunnelling between individual donor atoms, detected using a single electron transistor (SET) as an ultra-sensitive electrometer, are thought to be problematic because of the low ionisaton energy of the final D- state. In this paper we analyse the adiabatic scheme in detail. We find that despite significant stabil…
We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We show how the magnetic field plays a role in determining the bunching or anti-bunching tunnelling statistics of the donor dot and SET system. Using the counting statistics we show how to determine the lowest magnetic field where spin-readout is possible. We then show how such a measurement can be used to investigate and optimise single electron spin-readout fidelity.
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility to eliminate nuclear spins from the bulk crystal. However, the control of single electrons in Si has proved chall…
We evaluate the detector nonideality (and energy sensitivity) of a normal-state single-electron transistor (SET) in the cotunneling regime in a two-charge-state approximation. For small conductances and at zero temperature, the SET's performance as a charge-qubit readout device is characterized by a universal one-parameter function. The result shows that near-ideal, quantum-limited measurement is possible for a wide range of small bias voltages. However, near the threshold voltage for crossover to sequential tunneling, the device becomes strongly nonideal. The (symmetrized) current-charge cros…
We propose a resonant spin-field-effect transistor for chiral spin-resolved edge states in the integer quantum Hall effect with Rashba spin-orbit interaction. It employs a periodic array of voltage-controlled top gates that locally modulate the Rashba spin-orbit interaction. Strong resonant spin-field effect is achieved when the array periodicity matches the inverse of the wave-vector difference of the two chiral states involved. Well-known techniques of separately contacting the edge states make it possible to selectively populate and read out the edge states, allowing full spin readout. The …
Quantum computing technology is maturing at a relentless pace, yet individual quantum bits are wired one by one. As quantum processors become more complex, they require efficient interfaces to deliver signals for control and readout while keeping the number of inputs manageable. Digital electronics offers solutions to the scaling challenge by leveraging established industrial infrastructure and applying it to integrate silicon-based quantum devices with conventional CMOS circuits. Here, we combine both technologies at milikelvin temperatures and demonstrate the building blocks of a dynamic ran…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio-frequency resonant circuit coupled via the gate. Differential capacitan…
Mixed spin-boson coupling for qubit readout with suppressed residual shot-noise dephasing
QuTech and Kavli Institute of Nanoscience, Delft University of Technology（代尔夫特理工大学奎克研究所和卡弗里纳米科学研究所）；Kavli Institute of Nanoscience, Delft University of Technology（代尔夫特理工大学卡弗里纳米科学研究所）；School of Applied and Engineering Physics, Cornell University（康奈尔大学应用与工程物理学院）；Quantum Engineering Centre for Doctoral Training, H. H. Wills Physics Laboratory and Department of Electrical and Electronic Engineering, University of Bristol（布里斯托大学量子工程博士培训中心、H.H.威尔斯物理实验室及电气电子工程系）；QphoX
We present the experimental observation of a large exchange coupling $J \approx 300$ $μ$eV between two $^{31}$P electron spin qubits in silicon. The singlet and triplet states of the coupled spins are monitored in real time by a Single-Electron Transistor, which detects ionization from tunnel-rate-dependent processes in the coupled spin system, yielding single-shot readout fidelities above 95%. The triplet to singlet relaxation time $T_1 \approx 4$ ms at zero magnetic field agrees with the theoretical prediction for $J$-coupled $^{31}$P dimers in silicon. The time evolution of the 2-electron s…
Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-frequency gate-based sensing at 622 MHz with a Josephson parametric amplifier (JPA), that operates in the 500-800 MHz band, to reduce the integration time required to read the state of a silicon doubl…
The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications currently under development. To date, it has only been accomplished for two centres in crystalline solids: phosphorus in silicon using electrical readout based on a single electron transistor (SET) and nitrogen-vacancy centres in diamond using optical readout. A spin readout fidelity of about 90% has been demonstrated with both electrical readout and optical readout, however, the thermal limitations of the electrical readout and the po…
Electron readout contrast enhancement in the parallel nuclear regime of an exchange-coupled donor spin qubit system
Research Laboratory of Electronics, Massachusetts Institute of Technology（麻省理工学院电子研究实验室）；Quantum Machines（量子机器公司）；Intel Corporation（英特尔公司）；School of Electrical Engineering and Telecommunications, UNSW Sydney（新南威尔士大学悉尼分校电气与电信工程学院）；ARC Centre of Excellence for Quantum Computation and Communication Technology（ARC量子计算与通信技术卓越中心）；Diraq Pty. Ltd.（Diraq有限公司）；School of Fundamental Science and Technology, Keio University（庆应义塾大学基础科学与技术学院）；School of Physics, University of Melbourne（墨尔本大学物理学院）；School of Science, RMIT University（皇家墨尔本理工大学理学院）
Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on charge sensing with a single-island single-electron transistor (SISET) quickly lose sensitivity due to thermal broadening of the electron distribution in the reservoirs. Here we exploit the tunneling between two quantised states in a double-island SET (DISET) to demonstrate a charge sensor with an improvement in signal-to-noise by an order of magnitude compared t…
Fast and high-fidelity quantum state detection is essential for building robust spin-based quantum information processing platforms in semiconductors. The Pauli spin blockade (PSB)-based spin-to-charge conversion and its variants are widely used for the spin state discrimination of two-electron singlet-triplet (ST$_0$) qubits; however, the single-shot measurement fidelity is limited by either the low signal contrast, or the short lifetime of the triplet state at the PSB energy detuning, especially due to strong mixing with singlet states at large magnetic field gradients. Ultimately, the limit…
Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is configured in parallel with a superconducting spiral inductor resulting in resonators with loaded Q-factors in the 400-800 range. For a resonator operating at 330 MHz, we achieve a charge sensitivity of 7.7 $μ$e$/\sqrt{\text{Hz}}$ and, when operating at 616 MHz, we get 1.…
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defin…
Recent advances in quantum error correction (QEC) codes for fault-tolerant quantum computing \cite{Terhal2015} and physical realizations of high-fidelity qubits in a broad range of platforms \cite{Kok2007, Brown2011, Barends2014, Waldherr2014, Dolde2014, Muhonen2014, Veldhorst2014} give promise for the construction of a quantum computer based on millions of interacting qubits. However, the classical-quantum interface remains a nascent field of exploration. Here, we propose an architecture for a silicon-based quantum computer processor based entirely on complementary metal-oxide-semiconductor (…
Quantum sensing techniques have been successful in pushing the sensitivity limits in numerous fields, and hold great promise for scanning probes that study nano-scale devices and novel materials. However, forming a nano-scale qubit that is simple and robust enough to be placed on a scanning tip, and sensitive enough to detect various physical observables, is still a great challenge. Here we demonstrate a conceptually new qubit implementation in a carbon nanotube that achieves these requirements. In contrast to the prevailing semiconducting qubits that use electronic states in double quantum do…
