硅场效应晶体管中的栅敏感相干电荷振荡
Gate-sensing coherent charge oscillations in a silicon field-effect transistor
摘要：
由互补金属氧化物半导体（CMOS）技术的小型化引起的量子力学效应阻碍了场效应晶体管的性能和可扩展性前景。然而，这些量子效应，如隧道效应和相干性，可以利用现有的CMOS技术进行量子信息处理。在这里，我们报告的观察相干电荷振荡的双量子点中形成的硅纳米线晶体管检测通过其分散的相互作用与通过栅极耦合的射频谐振电路。点间电荷跃迁时的差分电容变化使我们能够监测系统在强驱动状态下的状态，在强驱动状态下，我们观察到Landau-Zener-St{ü}ckelberg-Majorana干扰对谐振器相位响应的影响。色散信号的理论分析表明，必须包括量子和隧穿电容的变化来描述量子比特谐振器的相互作用。此外，干涉图案的傅立叶分析揭示了电荷相干时间，$T_2\approx 100$ ~ps。我们的研究结果表明，在一个简单的硅晶体管的电荷相干控制和读出，并开辟了在现有的CMOS技术实现电荷和自旋量子位的可能性。
英文摘要：
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio-frequency resonant circuit coupled via the gate. Differential capacitance changes at the inter-dot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-St{ü}ckelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunnelling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, $T_2\approx 100$~ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology.
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