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arXiv quant-ph/9905096quant-ph
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硅锗异质结中用于量子计算的电子自旋共振晶体管

Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures

Rutger Vrijen, Eli Yablonovitch, Kang Wang, Hong Wen Jiang, Alex Balandin, Vwani Roychowdhury, Tal Mor, David DiVincenzo

备注：
10 pages LaTex, incl. 15 Figures 6/11/99 Added: discussion of g-factor and T1 and T2 of donor electron spin in Ge with related references, 1 figure and a discussion of ion implantation statistics in large arrays
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摘要：

我们应用现代电子能带结构工程和外延异质结构的全部功率来设计可以感测和控制单个施主电子自旋的晶体管。自旋共振晶体管可以形成量子信息处理的技术基础。通过施加栅极偏置来执行一个和两个量子位操作。偏置电场将电子波函数从掺杂剂离子拉到不同合金成分的层中。由于g因子的变化（Si：g=1.995，Ge：g=1.563），这种位移改变了自旋塞曼能量，允许单量子比特操作。通过进一步移动电子，与相邻量子位的重叠受到影响，这允许两个量子位操作。某些硅锗合金允许量子位间距大至200 nm，这完全在当前光刻技术的能力范围内。我们讨论制造限制和问题，扩大到一个大尺寸的计算机。

英文摘要：

We apply the full power of modern electronic band structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single donor electron spin. Spin resonance transistors may form the technological basis for quantum information processing. One and two qubit operations are performed by applying a gate bias. The bias electric field pulls the electron wave function away from the dopant ion into layers of different alloy composition. Owing to the variation of the g-factor (Si:g=1.995, Ge:g=1.563), this displacement changes the spin Zeeman energy, allowing single-qubit operations. By displacing the electron even further, the overlap with neighboring qubits is affected, which allows two-qubit operations. Certain Silicon-Germanium alloys allow a qubit spacing as large as 200 nm, which is well within the capabilities of current lithographic techniques. We discuss manufacturing limitations and issues regarding scaling up to a large size computer.

机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。

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