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基于体锗自旋量子比特的自旋电路量子电动力学

Spin-cQED with bulk germanium spin qubits

A. -F. Kalo, E. A. Rodríguez-Mena, J. C. Abadillo-Uriel, M. Filippone, Y. -M. Niquet

arXiv 2607.24967首次发表:更新:

AI 中文总结

研究基于体锗的自旋电路量子电动力学,通过建模和比较,发现其空穴自旋能与超导微波谐振器进入强耦合,耦合强度高且对磁场方向不敏感,确立了体锗作为可扩展自旋 - cQED 有力平台的地位。

AI 中文摘要

无应变体锗是用于自旋电路量子电动力学(spin-cQED)的极具吸引力的材料。通过系统建模并与先进的应变锗异质结构比较,发现体锗双量子点中的空穴自旋能与超导微波谐振器轻松进入强耦合 regime,实现自旋 - 光子耦合强度 $g_s/2\pi\gtrsim100$\,MHz。这种增强源于大的自旋 - 轨道相互作用。此外,耦合对施加磁场方向不太敏感,这便于操作并限制器件间差异影响。结果表明体锗是用于可扩展自旋 - cQED 的有力平台。

英文摘要

Unstrained bulk germanium is a particularly attractive material for circuit quantum electrodynamics with spins (spin-cQED). We show, through systematic modeling and comparison with state-of-the-art strained germanium heterostructures, that hole spins in bulk germanium double quantum dots readily reach the strong-coupling regime with superconducting microwave resonators, achieving spin-photon coupling strengths $g_s/2π\gtrsim100$\,MHz. This enhancement originates from large spin-orbit interactions beyond the perturbative regime. In addition, the coupling is much less sensitive to the orientation of the applied magnetic field, which shall ease operation and limit the impact of device-to-device variability. Our results establish bulk germanium as a compelling platform for scalable spin-cQED.

Comments4 pages, 3 figures + Supp. Mat

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