使用鳍式场效应晶体管的公共栅极结构的紧凑自旋量子比特
Compact spin qubits using the common gate structure of fin field-effect transistors
摘要：
商业晶体管的尺寸是纳米级的，并且已经有许多使用常规互补金属氧化物半导体（CMOS）晶体管的自旋量子比特的提议。然而，先前提出的自旋量子位需要许多导线来控制少量的量子位。当量子比特被集成到芯片中时，这会导致一个严重的“电线丛林”问题。在此，为了减少复杂的布线，我们理论上考虑自旋量子位嵌入到鳍式场效应晶体管（FinFET）器件中，使得自旋量子位共享FinFET的公共栅极电极。量子位之间的相互作用通过经由FinFET的沟道的Ruderman Kittel Kasuya Yosida（RKKY）相互作用发生。紧凑实现的补偿需要在小空间中的高密度电流线。除了当前提议的量子计算机之外，还讨论了量子退火机的可能性。
英文摘要：
The sizes of commercial transistors are of nanometer order, and there have already been many proposals of spin qubits using conventional complementary metal oxide semiconductor (CMOS) transistors. However, the previously proposed spin qubits require many wires to control a small number of qubits. This causes a significant 'jungle of wires' problem when the qubits are integrated into a chip. Herein, to reduce the complicated wiring, we theoretically consider spin qubits embedded into fin field-effect transistor (FinFET) devices such that the spin qubits share the common gate electrode of the FinFET. The interactions between qubits occur via the Ruderman Kittel Kasuya Yosida (RKKY) interaction via the channel of the FinFET. The compensation for the compact implementation requires high-density current lines in a small space. The possibility of a quantum annealing machine is discussed in addition to the quantum computers of the current proposals.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
