K. E. Arms, P. Buchholz, K. K. Gan, M. Holder, P. Jackson, M. Johnson, H. Kagan, R. Kass, A. M. Rahimi, A. Roggenbuck, C. Rush, P. Schade, S. Smith, R. Ter-Anto… 展开作者
K. E. Arms, P. Buchholz, K. K. Gan, M. Holder, P. Jackson, M. Johnson, H. Kagan, R. Kass, A. M. Rahimi, A. Roggenbuck, C. Rush, P. Schade, S. Smith, R. Ter-Antonian, M. Ziolkowski, M. M. Zoeller
备注：
17 pages, 23 figures, submitted to NIM Added references. Added figure 15. Moved sec. IV to sec. II
We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the LHC at CERN: a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode for 80 Mbit/s data transmission from the detector, and a Bi-Phase Mark decoder chip to recover the control data and 40 MHz clock received optically by a PIN diode. We have successfully implemented both ASICs in 0.25 micron CMOS technology using enclosed layout transistors and guard rings for increased radiation hardness. We present results of the performance of these chips, including irradiation with 24 GeV protons up to 61 Mrad (2.3 x 10e15 p/cm^2).
The LHC is expected to reach luminosities up to 3000fb-1 and the innermost layer of the ATLAS upgrade plans to cope with higher occupancy and to decrease the pixel size. 3D-Si sensors are a good candidate for the innermost layer of the ATLAS pixel upgrade since they exhibit good performance under high fluences and the new designs will have smaller pixel size to fulfill the electronics expectations. This paper reports TCAD simulations of the 3D-Si sensors designed at IMB-CNM with non passing-through columns that are being fabricated for the next innermost layer of the ATLAS pixel upgrade, shows…
The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of a new innermost layer, the Insertable B-Layer (IBL). An overview of the operational experience, the refurbishing of the Pixel Detector and of the IBL project as well as the experience in its construction, integration and commissioning are described.
Silicon pixel detectors are at the core of the current ATLAS detector and its planned upgrade. As the detectors in closest proximity to the interaction point, they will be exposed to a significant amount of radiation: prior to the HL-LHC, the innermost layers will receive a fluence in excess of $10^{15}$ 1 MeV $n_\mathrm{eq}/\mathrm{cm}^2$ and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This talk presents a digitization model that includes radiation damage effects to the ATLAS Pixel sensors for the first time. After a thorou…
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of $10^{15}$ 1 MeV ${n}_{eq}/{cm}^2$, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors.…
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test res…
For the high luminosity phase of the Large Hadron Collider to start operation around 2026, a major upgrade of the ATLAS Inner Tracker (ITk) is in preparation. Thanks to their low power dissipation and high charge-collection efficiency after irradiation, thin planar pixel modules are the baseline option to instrument all, except for the innermost layer of the pixel detector. To optimise the sensor layout for a pixel cell size of $50\times50\,μm^2$, TCAD simulations are being performed. Charge-collection efficiency, electronic noise and electrical-field properties are investigated. A radiation-d…
A measurement has been made of the radiation damage incurred by the ATLAS Pixel Detector barrel silicon modules from the beginning of operations through the end of 2012. This translates to hadronic fluence received over the full period of operation at energies up to and including 8 TeV. The measurement is based on a per-module measurement of the silicon sensor leakage current. The results are presented as a function of integrated luminosity and compared to predictions by the Hamburg Model. This information can be used to predict limits on the lifetime of the Pixel Detector due to current, for …
In the framework of the HL-LHC upgrade, the ATLAS experiment plans to introduce an all-silicon inner tracker to cope with the elevated occupancy. To investigate the suitability of pixel sensors using the proven planar technology for the upgraded tracker, the ATLAS Planar Pixel Sensor R&D Project (PPS) was established comprising 19 institutes and more than 90 scientists. The paper provides an overview of the research and development project and highlights accomplishments, among them: beam test results with planar sensors up to innermost layer fluences (> 10^16 n_eq cm^2); measurements obtained …
For the High Luminosity upgrade of the Large Hadron Collider the current ATLAS Inner Detector will be replaced by an all-silicon Inner Tracker. The pixel detector will consist of five barrel layers and a number of rings, resulting in about 13 m^2 of instrumented area. Due to the huge non-ionising fluence (1e16 neq/cm^2) and ionising dose (5 MGy), the two innermost layers, instrumented with 3D pixel sensors and 100 um thin planar sensors, will be replaced after about five years of operation. Each pixel layer comprises hybrid detector modules that will be read out by novel ASICs, implemented in …
High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in the development of depleted CMOS silicon detectors, which could achieve similar performances at lower cost of production and complexity. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, and the first fully monolithi…
The ATLAS collaboration will replace its tracking detector with new all silicon pixel and strip systems. This will allow to cope with the higher radiation and occupancy levels expected after the 5-fold increase in the luminosity of the LHC accelerator complex (HL-LHC). In the new tracking detector (ITk) pixel modules with increased granularity will implement to maintain the occupancy with a higher track density. In addition, both sensors and read-out chips composing the hybrid modules will be produced employing more radiation hard technologies with respect to the present pixel detector. Due to…
This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade for the High Luminosity Large Hadron Collider (HL-LHC). Implementing such a device in the detector module will result in a lower production cost and lower material budget compared to the presently used hybrid designs. In this paper the chip architecture will be described foll…
In view of the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), planned to start around 2023-2025, the ATLAS experiment will undergo a replacement of the Inner Detector. A higher luminosity will imply higher irradiation levels and hence will demand more ra- diation hardness especially in the inner layers of the pixel system. The n-in-p silicon technology is a promising candidate to instrument this region, also thanks to its cost-effectiveness because it only requires a single sided processing in contrast to the n-in-n pixel technology presently employed in the LHC experiments. In…
Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $μ$m, produced at CiS, and 100-200 $μ$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includ…
Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the upgrade of the ATLAS Pixel Detector towards the HL-LHC requirements, active pixel sensors in HV-CMOS technology were investigated. These implement amplifier and discriminator stages directly in insulating deep n-wells, which also act as collecting electrodes. The deep n-wells allow for bias voltages up to 150V leading to a depletion depth of several 10um. Prot…
ATLAS探测器将进行升级，以实现LHC的更高强度运行。在所谓的第一阶段运行之前，预计2016年将长期关闭。一个新的像素层，称为可插入B层（IBL），将被插入在现有的像素探测器和一个新的（更小半径）光束管之间的半径约为3.2厘米。IBL需要开发几种新技术来应对增加的辐射水平和像素占用，以及改善现有像素探测器的物理性能。IBL项目为整个ATLAS跟踪器的第二阶段升级提供了一个技术测试，其亮度约为10^35 cm^-2 s ^-1。该项目的概述，特别强调IBL布局和预期的性能，以及模块开发，包括杂交技术。
The ATLAS experiment will undergo a major upgrade of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) to start operation in 2026. The most severe challenges are to be faced by the innermost layers of the pixel detector which will have to withstand a radiation fluence of up to $1.4\times10^{16}\,$n$_\text{eq}$/cm$^{2}$. Thin planar pixel modules are promising candidates to instrument these layers, thanks to the small material budget and their high charge collection efficiency after irradiation. Sensors of $100-200\,μ$m thickness, interconnected to FE-I4 read-out chips…
To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is minimized thanks to the active edge technology. In this paper we report on two productions, a first one consisting of 200 μm thick n-on-p sensors with active edge, a second one composed of 100 and 130 μ…
Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulations indicate that SET dominate over SEU on the load line of the memory. Operational issues and mitigation techniques are presented.
Planar silicon pixel sensors with modified n$^+$-implantation shapes based on the IBL pixel sensor were designed in Dortmund. The sensors with a pixel size of $250\,μ$m $\times$ $50\,μ$m are produced in n$^+$-in-n sensor technology. The charge collection efficiency should improve with electrical field strength maxima created by the different n$^+$-implantation shapes. Therefore, higher particle detection efficiencies at lower bias voltages could be achieved. The modified pixel designs and the IBL standard design are placed on one sensor to test and compare the designs. The sensor can be read o…
Run-2 of the Large Hadron Collider (LHC) will provide new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel Detector in HEP, installing a new pixel layer, also called Insertable B-Layer (IBL). The IBL is a fourth layer of pixel detectors, and has been installed in May 2014 at a radius of 3.3 cm between the existing Pixel Detector and a new smaller radius beam-pipe. The new detector, built to cope with the high radiation and expected occupancy, is the first large scale applicat…
The LHC accelerator complex will be upgraded between 2020-2022, to the High-Luminosity-LHC, to considerably increase statistics for the various physics analyses. To operate under these challenging new conditions, and maintain excellent performance in track reconstruction and vertex location, the ATLAS pixel detector must be substantially upgraded and a full replacement is expected. Processing techniques for novel pixel designs are optimised through characterisation of test structures in a clean room and also through simulations with Technology Computer Aided Design (TCAD). A method to study no…
