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arXiv 2602.04500cond-mat.mtrl-scicond-mat.other
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FePt/BaTiO$_3$中极化控制磁化翻转的微观起源

Microscopic Origin of Polarization-Controlled Magnetization Switching in FePt/BaTiO$_3$

Quaid-i-Azam University(奎德-e-阿扎姆大学);University of Ulsan(蔚山大学);Van Lang University(文朗大学);Incheon National University(仁川国立大学)

Qurat-ul-ain, Thi H. Ho, Soon Cheol Hong, Dorj Odkhuu, S. H. Rhim

AI总结:

研究揭示FePt/BaTiO$_3$中极化控制磁化翻转的微观机制,通过轨道重构调控磁各向异性与磁弹性能量的竞争,为超低功耗磁存储器设计提供新路径。

摘要:

通过第一性原理计算,展示了在FePt/BaTiO$_3$ (001)中由电场驱动的磁化翻转。FePt层的磁易轴方向在铁电极化反转时从平面转向垂直方向,这一过程对晶格应变敏感,具有阈值应变η(η≈%)。在此现象中,大的界面磁电耦合(α_I = 3.6 × 10^{-10} G·cm²/V)起作用,源于轨道重构。特别是Pt-d轨道占有率的重新分布改变了自旋轨道耦合,从而调节磁各向异性(K_i)与磁弹性能量(b_1)之间的竞争。我们的工作阐明了应变工程磁电性的基本物理,并提出了设计超低功耗电压控制磁存储器的具体途径。

英文摘要:

Electric-field driven magnetization switching in FePt/BaTiO$_3$ (001) is demonstrated through first-principles calculations. The magnetic easy axis of FePt layer undergoes a transition from in-plane to perpendicular direction upon ferroelectric polarization reversal, a process sensitively controlled by epitaxial strain with threshold strain strain($η$) $η\approx\%$. At this phenomena, a large interfacial magnetoelectric coupling ($α_I = 3.6 \times 10^{-10}$ G$\cdot$cm$^2$/V) is responsible, stemming from the orbital reconstruction. In particular, the redistribution of Pt-$d$ orbital occupancy alters spin-orbit coupling, thereby tuning the competition between magnetic anisotropy ($K_i$) and magnetoelastic energy ($b_1$). Our work clarifies the fundamental physics of strain-engineered magnetoelectricity and suggests a concrete pathway for designing ultra-low-power voltage-controlled magnetic memory.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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