We quantitatively evaluate a spin anomalous Hall effect (SAHE), generating spin angular momentum flow (spin current, $J_{\rm s}$), in an L1$\rm_{0}$-FePt ferromagnet by exploiting giant magnetoresistance devices with L1$\rm_{0}$-FePt / Cu / Ni$\rm_{81}$Fe$\rm_{19}$ . From the ferromagnetic resonance linewidth modulated by the charge current ($J_{\rm c}$) injection, the spin anomalous Hall angle ($ α_{\rm SAH} $) is obtained to be 0.25 $ \pm $ 0.03. The evaluation of $ α_{\rm SAH} $ at different configurations between $J_{\rm c}$ and magnetization enables us to discuss the symmetry of SAHE and gives the unambiguous evidence that SAHE is the source of $J_{\rm s}$. Thanks to the large $ α_{\rm SAH} $, we demonstrate the SAHE-induced magnetization switching.
We investigate the ultrafast magnetization dynamics of FePt in the L10 phase after an optical heating pulse, as used in heat assisted magnetic recording. We compare continuous and nanogranular thin films and emphasize the impact of the finite size on the remagnetization dynamics. The remagnetization speeds up significantly with increasing external magnetic field only for the continuous film, where domain wall motion governs the dynamics. The ultrafast remagnetization dynamics in the continuous film are only dominated by heat transport in the regime of high magnetic fields, whereas the timescal…
Vortex Dynamics-Mediated Low-Field Magnetization Switching in an Exchange-Coupled System
磁涡旋是软磁纳米盘中拓扑稳定的磁性结构，因此引起了人们的广泛关注。人们对孤立系中磁涡旋的性质进行了大量的研究。在这里，我们展示了一个新的方面的磁涡旋的动力学强烈影响的磁结构的环境。我们利用一个纳米点的交换耦合双层与软磁Ni 81 Fe 19（坡莫合金; Py）具有磁涡旋和垂直磁化的L10-FePt表现出大的开关场（HSW）。在低磁场条件下，自旋波的涡旋动力学使得Py中的过剩能量积累，从而触发L10-FePt的反畴形核。我们的研究结果揭示了反畴成核的非局域机制，并提供了一个有效的HSW减少，是超低功率自旋电子器件所需的路线。
Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, straintronic memory cell for extremely low energy operation
In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and confirmed by the experiments. In this work, we theoretically and numerically investigate the switching current required for perpendicular magnetization switching in ferromagnetic trilayers. We confirm that the tilted spin polarization enables field-free deterministic switching at a lower current than conventional spin-orbit torque or spin-transfer torque sw…
A low power magnetization switching scheme based on the voltage control of magnetic anisotropy (VCMA) is proposed. In contrast to the conventional switching scheme using VCMA, where the magnetic anisotropy is eliminated during the voltage pulse, the magnetic anisotropy is enhanced to induce precession around the axis close to the easy axis. After turning off the voltage proximately at a half of precession period, the magnetization relaxes to the opposite equilibrium direction. We perform numerical simulations and show that the pulse duration of the proposed switching scheme is as short as a fe…
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density current to go through the tunnel junction. For perpendicular MRAM, however, SOT driven switching of the free layer requires an external in-plane field, which poses limitation for viability in practical applications. Here we demonstrate field-free magnetization switching of a perpendicular magnet by utilizing an Iridium (Ir) layer. The Ir layer not only prov…
A theoretical formula is derived for the threshold current to switch a perpendicular magnetization in a ferromagnet by the spin Hall effect. The numerical simulation of the Landau-Lifshitz-Gilbert equation indicates that magnetization switching is achieved when the steady-state solution of the magnetization in the presence of the current is outside an energetically unstable region. Based on the numerical result, an analytical theory deriving the threshold current is developed by focusing on the first-order perturbation to the unstable state. The analytical formula clarifies that the magnitude …
The lack of certain crystalline symmetries in strong spin-orbit-coupled non-magnetic materials allows for the existence of uncoventional spin Hall responses, with electrically generated transverse spin currents possessing collinear flow and spin directions. The injection of such spin currents into an adjacent ferromagnetic layer can excite magnetization dynamics via unconventional spin-orbit torques, leading to deterministic switching in ferromagnets with perpendicular magnetic anisotropy. We study the interplay between conventional and unconventional spin-orbit torques on the magnetization dy…
Detailed understanding of spin dynamics in magnetic nanomaterials is necessary for developing ultrafast, low-energy and high-density spintronic logic and memory. Here, we develop micromagnetic models and analytical solutions to elucidate the effect of increasing damping and uniaxial anisotropy on magnetic field pulse-assisted switching time, energy and field requirements of nanowires with perpendicular magnetic anisotropy and yttrium iron garnet-like spin transport properties. A nanowire is initially magnetized using an external magnetic field pulse (write) and self-relaxation. Next, magnetic …
Room-Temperature Highly-Tunable Coercivity and Highly-Efficient Nonvolatile Multi-States Magnetization Switching by Small Current in Single 2D Ferromagnet Fe$_3$GaTe$_2$
We proposed and demonstrated a simple method for detection of in-plane magnetization switching by spin-orbit torque (SOT) in bilayers of non-magnetic / magnetic materials. In our method, SOT is used not only for magnetization switching but also for detection. Our method can detect arbitrary Mx and My component without an external magnetic field, which is useful for fast characterization of type-X, type-Y, and type-XY SOT magnetization switching. Our SOT detection scheme can be utilized not only for fast characterization of SOT switching in bilayers, but also for electrical detection of in-plan…
Energy dissipation and switching delay in spin-transfer torque switching of nanomagnets with low-saturation magnetization in the presence of thermal fluctuations
In this article we analyze by modeling two possible mechanisms for magnetization switching using spin orbit torques, which have been reported to cause field-free deterministic switching in experiments. Here we compare the field-free magnetization switching due to a tilt of the anisotropy direction against the use of an antiferromagnetic bias field. Simple results obtained analytically show that a bias field not only causes the magnetization reversal but also reduces the corresponding energy barrier. The critical current required for magnetization switching is analyzed on the basis of a macrosp…
Based on the micromagnetic simulations the magnetization switching in a triangle magnetic element by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field is proposed. The proposed switching scheme is not the toggle switching but the deterministic switching where the magnetic state is determined by the polarity of the applied voltage pulse. The mechanism and conditions for the switching are clarified. The results provide a fast and low-power writing method for magnetoresistive random access memories.
We report on the switching of the in-plane magnetization of thin yttrium iron garnet (YIG)/Pt bilayers induced by an electrical current. The switching is either field-induced and assisted by a dc current, or current-induced and assisted by a static magnetic field. The reversal of the magnetization occurs at a current density as low as $10^5$~A/cm$^{2}$ and magnetic fields of $\sim 40$~$μ$T, two orders of magnitude smaller than in ferromagnetic metals, consistently with the weak uniaxial anisotropy of the YIG layers. We use the transverse component of the spin Hall magnetoresistance to sense th…
Spintronics provides an efficient platform for realizing non-volatile memory and logic devices. In these systems, data is stored in the magnetization of magnetic materials, and magnetization is switched in the writing process. In conventional spintronic devices, ferromagnetic materials are used which have a magnetization dynamics timescale of around the nanoseconds, setting a limit for the switching speed. Increasing the magnetization switching speed has been one of the challenges in spintronic research. In this work we take advantage of the ultrafast magnetization dynamics in ferrimagnetic ma…
In this work, we propose helicity-dependent switching (HDS) of magnetization of Co/Pt for energy efficient optical receiver. Designing a low power optical receiver for optical-to-electrical signal conversion has proven to be very challenging. Current day receivers use a photodiode that produces a photocurrent in response to input optical signals, and power hungry trans-impedance amplifiers are required to amplify the small photocurrents. Here, we propose light helicity induced switching of magnetization to overcome the requirement of photodiodes and subsequent trans-impedance amplification by …
Electric field-induced magnetization switching in interface-coupled multiferroic heterostructures: A highly-dense, non-volatile, and ultra-low-energy computing paradigm
We resolve a significant controversy about how to understand and engineer single-shot all-optical switching of magnetization in ferrimagnets using femto- or picosecond-long heat pulses. By realistically modelling a generic ferrimagnet as two coupled macrospins, we comprehensively show that the net magnetization can be reversed via different pathways, using a heat pulse with duration spanning all relevant timescales within the non-adiabatic limit. This conceptual understanding is fully validated by experiments studying the material and optical limits at which the switching process in GdFeCo all…
Efficient control of a magnetization without an application of the external magnetic fields is the ultimate goal of spintronics. We demonstrate, that in monolayers of $\text{CrI}_3$, magnetization can be switched all optically, by application of the resonant pulses of circularly polarized light. This happens because of the efficient coupling of the lattice magnetization with bright excitonic transition. $\text{CrI}_3$ is thus perspective functional material with high potential for applications in the domains of spintronics and ultra-fast magnetic memory.
For deterministic magnetization switching by spin-orbit torque (SOT) in a perpendicular magnetic anisotropy system, an additional in-plane direction magnetic field is essential for deterministic switching by breaking the magnetization symmetry. Realizing chirality in a magnetic ordering system can be one approach for achieving asymmetry in the lateral direction for field-free magnetization switching. However, systematic analysis of the influence of the chiral spin system on deterministic switching is still scarce. In this report, the achievement of field-free SOT-induced magnetization switchin…
Current-induced switching of magnetic tunnel junctions: Effects of field-like spin-transfer torque, pinned-layer magnetization orientation and temperature
