Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However, magnetization switching by spin-orbit torques is usually attributed to current flowing in the nonmagnetic metal layer of multilayers or in magnetic alloys with heavy elements. Here, we report perpendicular magnetization switching induced by current flowing in an elemental ferromagnet nickel single layer. This prototype structure demonstrates that current-induced magnetization switching is a general phenomenon of magnet. The results suggest that the current induces an effective transverse magnetic field with an out-of-plane component leading to the magnetization switching, different to the conventional spin-orbit torques. Our work opens the new insight and reveals the intrinsic mechanism of current-induced torques.
We present evidence for an ultrafast optically induced ferromagnetic alignment of antiferromagnetic Mn in Co/Mn multilayers. We observe the transient ferromagnetic signal at the arrival of the pump pulse at the Mn L$_3$ resonance using x-ray magnetic circular dichroism in reflectivity. The timescale of the effect is comparable to the duration of the excitation and occurs before the magnetization in Co is quenched. Theoretical calculations point to the imbalanced population of Mn unoccupied states caused by the Co interface for the emergence of this transient ferromagnetic state.
We demonstrate an element-specific measurement of magnetization precession in a metallic ferromagnetic alloy, separating Ni and Fe moment motion in Ni81Fe19. Pump-probe X-ray magnetic circular dichroism (XMCD), synchronized with short magnetic field pulses, is used to measure free magnetization oscillations up to 2.6 GHz with elemental specificity and a rotational resolution of < 2 deg. Magnetic moments residing on Ni sites and Fe sites in a Ni81Fe19(50nm) thin film are found to precess together at all frequencies, coupled in phase within instrumental resolution of 90 ps.
Recent studies on magnetization dynamics induced by spin-orbit torque have revealed a weak dependence of the critical current for magnetization switching on the damping constant of a ferromagnetic free layer. This study, however, reveals that the damping constant nevertheless plays a key role in magnetization switching induced by spin-orbit torque. An undesirable switching, returning to an initial state, named as back switching, occurs in a ferromagnet with an easy axis parallel to the current direction. Numerical and theoretical analyses reveal that back switching is strongly suppressed when …
In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and confirmed by the experiments. In this work, we theoretically and numerically investigate the switching current required for perpendicular magnetization switching in ferromagnetic trilayers. We confirm that the tilted spin polarization enables field-free deterministic switching at a lower current than conventional spin-orbit torque or spin-transfer torque sw…
We study the fundamental question of the lattice dynamics of a metallic ferromagnet in the regime where the static long range magnetic order is replaced by the fluctuating local moments embedded in a metallic host. We use the \textit{ab initio} Density Functional Theory(DFT)+embedded Dynamical Mean-Field Theory(eDMFT) functional approach to address the dynamic stability of iron polymorphs and the phonon softening with increased temperature. We show that the non-harmonic and inhomogeneous phonon softening measured in iron is a result of the melting of the long range ferromagnetic order, and is …
The switching of magnetic layers is studied under the action of a spin current in a ferromagnetic metal/non-magnetic metal/ferromagnetic metal spin valve. We find that the main contribution to the switching comes from the non-equilibrium exchange interaction between the ferromagnetic layers. This interaction defines the magnetic configuration of the layers with minimum energy and establishes the threshold for a critical switching current. Depending on the direction of the critical current, the interaction changes sign and a given magnetic configuration becomes unstable. To model the time depen…
We present a theoretical study of the the effects of off-resonant polarized optical fields on a ferromagnetic model system. We determine the light-induced dynamics of itinerant carriers in a system that includes magnetism at the mean-field level and spin-orbit coupling. We investigate an all-optical switching process for ferromagnets, which is close to the one proposed by Qaiumzadeh et al. [Phys. Rev. B 88, 064416] for the inverse Faraday effect. By computing the optically driven coherent dynamics together with incoherent scattering mechanisms we go beyond a perturbation expansion in powers of…
We have performed non-local spin injection into a nano-scale ferromagnetic particle configured in a lateral spin valve structure to switch its magnetization only by spin current. The non-local spin injection aligns the magnetization of the particle parallel to the magnetization of the spin injector. The responsible spin current for switching is estimated from the experiment to be about 200 $μ$A, which is reasonable compared with the values obtained for conventional pillar structures. Interestingly the switching always occurs from anti-parallel to parallel in the particle/injector magnetic conf…
The magnetization switching of a thin ferromagnetic layer placed on top of a heavy metal (such as Pt, Ta or W) driven by an in-plane current has been observed in recent experiments. The magnetization dynamics of these processes is studied in a full micromagnetic framework which takes into account the transfer-torque from spin Hall effect due to the spin-orbit coupling. Simulations indicate that the reversal occurs via nucleation of complex magnetization patterns. In particular, magnetic bubbles appear during the reversal of the magnetization in the perpendicular configuration while for the in-…
Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires an externally-applied in-plane field to break the switching symmetry. We show that by inserting an in-plane magnetized ferromagnetic layer CoFeB underneath the conventional W/CoFeB/MgO SOT heterostructure, deterministic SOT switching of the perpendicularly-magnetized top CoFeB layer can be realized without the need of in-plane bias field. Kerr imaging study…
Faster magnetic recording technology is indispensable to massive data storage and big data sciences. {All-optical spin switching offers a possible solution}, but at present it is limited to a handful of expensive and complex rare-earth ferrimagnets. The spin switching in more abundant ferromagnets may significantly expand the scope of all-optical spin switching. Here by studying 40,000 ferromagnetic spins, we show that it is the optical spin-orbit torque that determines the course of spin switching in both ferromagnets and ferrimagnets. Spin switching occurs only if the effective spin angular …
Ferromagnetic rings exhibit many novel physical phenomena with promise for potential applications. Here, we focus on switching processes which are fundamental properties of magnetic systems and are especially crucial for data storage applications. A brief introduction on the advantages of ring geometries is presented, followed by a background survey of the model and methods to study nanomagnetic elements. The relevant magnetic states identified until now are discussed, with special emphasis given to vortex, onion, and twisted states. Such states are potential candidates for data storage applic…
We investigate the switching field distribution and the resulting bit error rate of exchange coupled ferri-/ferromagnetic bilayer island arrays by micromagnetic simulations. Using islands with varying microstructure and anisotropic properties, the intrinsic switching field distribution is computed. The dipolar contribution to the switching field distribution is obtained separately by using a model of a triangular patterned island array resembling $1.4\,\mathrm{Tb/in}^2$ bit patterned media. Both contributions are computed for different thickness of the soft exchange coupled ferrimagnet and als…
A major challenge in spin-based electronics is reducing power consumption for magnetization switching of ferromagnets, which is being implemented by injecting a large spin-polarized current. The alternative approach is to control the magnetic anisotropy (MA) of the ferromagnet by an electric field. However, the voltage-induced MA is too weak to deterministically switch the magnetization without an assisting magnetic field, and the strategy towards this goal remains elusive. Here, we demonstrate a new scheme of orbital-controlled magnetization switching (OCMS): A sharp change in the MA is induc…
The magnetization switching dynamics of biaxial single-domain homogeneous ferromagnetic particles, in which the two easy axes are perpendicular to each other, is simulated using a 4-state clock model. A zero-field mapping of the statics between the symmetric 4-state clock model and two decoupled Ising models is extended to non-zero field statics and to the dynamics. This significantly simplifies the analysis of the simulation results. We measure the magnetization switching time of the model and analyze the results using droplet theory. The switching dynamics in the asymmetric model is more com…
We investigate the thermal activated magnetisation reversal in a single ferromagnetic nanoparticle with uniaxial anisotropy using Monte Carlo simulations. The aim of this work is to reproduce the reversal magnetisation by uniform rotation at very low temperature in the high energy barrier hypothesis, that is to realize the Néel-Brown model. For this purpose we have considered a simple cubic nanoparticle where each site is occupied by a classical Heisenberg spin. The Hamiltonian is the sum of an exchange interaction term, a single-ion anisotropy term and a Zeeman interaction term. Our numerical…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and recently are heading toward deterministic switching without external magnetic field. Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetizati…
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the direction and magnitude of the current is determined from the shifts in the magnetization switching angle. We find that the strain induced effective magnetic field is about three times as large as the Ra…
Combining pairs of ferromagnetic metals with different signs of scattering anisotropies, let us independently invert the magnetoresistance and the direction of current-driven switching in ferromagnetic/non-magnetic/ferromagnetic metal nanopillars. We show all four combinations of normal and inverse behaviors, at both room temperature and 4.2K. In all cases studied, the direction of switching is set by the net scattering anisotropy of the fixed (polarizing) ferromagnet. We provide simple arguments for what we see.
The magnetic reversal by spin-polarized current of a magnetic junction consisting of two ferromagnetic layers and a nonmagnetic spacer in between is considered. Initially, the free layer is magnetized antiparallel to the pinned layer by an external magnetic field. Under current flowing, a nonequilibrium spin polarization appears in the free layer. The interaction between the injected spins and the lattice leads to instability of the antiparallel orientation at the high enough current density and to switching the free layer to a state with magnetization parallel to one in the pinned layer. If t…
We investigate different approaches towards a nonvolatile switching of the remanent magnetization in single-crystalline ferromagnets at room temperature via elastic strain using ferromagnetic thin film/piezoelectric actuator hybrids. The piezoelectric actuator induces a voltage-controllable strain along different crystalline directions of the ferromagnetic thin film, resulting in modifications of its magnetization by converse magnetoelastic effects. We quantify the magnetization changes in the hybrids via ferromagnetic resonance spectroscopy and superconducting quantum interference device magn…
We report here on the magnetic properties of ZnO:Mn and ZnO:Co doped nanoparticles. We have found that the ferromagnetism of ZnO:Mn can be switched on and off by consecutive low-temperature annealings in O2 and N2 respectively, while the opposite phenomenology was observed for ZnO:Co. These results suggest that different defects (presumably n-type for ZnO:Co and p-type for ZnO:Mn) are required to induce a ferromagnetic coupling in each case. We will argue that ferromagnetism is likely to be restricted to a very thin, nanometric layer, at the grain surface. These findings reveal and give insigh…
Over the years attempts have been made to compensate for the inherent weaknesses in the bulk state of the multiferroic BiFeO3, such as high leakage current and the absence of ferromagnetic correlation, and exploit its magnetoelectric potential by forming solid solutions with other perovskites. Studies in the recent few years have shown that alloying of BiFeO3 with BaTiO3, both with and without additives, can induce both ferroelectric and ferromagnetic switching. While the coexistence of both the ferroic orders is encouraging from the view point of technological applications, the origin of ferr…
We propose a theoretical model of magnetization switching in a ferromagnetic multilayer by both electric current and microwaves. The electric current gives a spin transfer torque on the magnetization, while the microwaves induce a precession of the magnetization around the initial state. Based on numerical simulation of the Landau-Lifshitz-Gilbert (LLG) equation, it is found that the switching current is significantly reduced compared with the switching caused solely by the spin transfer torque when the microwave frequency is in a certain range. We develop a theory of switching from the LLG eq…
Recent investigations have found that the strongly constrained and appropriately normed (SCAN) meta-GGA exchange-correlation functional significantly over-magnetizes elemental Fe, Co, and Ni solids. For the paradigmatic case, bcc Fe, the error relative to experiment is $\gtrsim 20 \%$. Comparative analysis of magnetization results from SCAN and its \textit{deorbitalized} counterpart, SCAN-L, leads to identification of the source of the discrepancy. It is not from the difference between Kohn-Sham (SCAN-L) and generalized Kohn-Sham (SCAN) procedures. The key is the iso-orbital indicator $α$ (the…
We report switching of magnetic anisotropy (MA) from in-plane to perpendicular with increasing the thickness d of a (001)-oriented ferromagnetic-semiconductor (FMS) (Ga0.7,Fe0.3)Sb layer with a high Curie temperature (Tc > 320 K), using ferromagnetic resonance at room temperature. We show that the total MA energy (E) along the [001] direction changes its sign from positive (in-plane) to negative (perpendicular) with increasing d above an effective critical value \mathrm{d}_\mathrm{C}^\mathrm{*}\ ~ 42 nm. We reveal that (Ga,Fe)Sb has two-fold symmetry in the film plane. Meanwhile, in the plane …
Room-Temperature Highly-Tunable Coercivity and Highly-Efficient Nonvolatile Multi-States Magnetization Switching by Small Current in Single 2D Ferromagnet Fe$_3$GaTe$_2$
We present a time-resolved measurement of magnetization dynamics during ferromagnetic resonance (FMR) in a single layer of Ni81Fe19. Small-angle (<1 deg.) precession of elemental Ni, Fe moments could be measured directly and quantitatively using time-resolved x-ray magnetic circular dichroism (XMCD) in transmission. The high temporal and rotational sensitivity of of this technique has allowed characterization of the phase and amplitude of driven FMR motion at 2.3 GHz, verifying basic expectations for a driven resonance.
Using density matrix equations of motion and a tight-binding band calculation, we predict all-optical switching between four metastable magnetic states of (III,Mn)As ferromagnets. This switching is initiated non-thermally within 100fs, during nonlinear coherent photoexcitation. For a single optical pulse, magnetization reversal is completed after $\sim$100 ps and controlled by the coherent femtosecond photoexcitation. Our predicted switching comes from magnetic nonlinearities triggered by a femtosecond magnetization tilt that is sensitive to un--adiabatic light--induced spin interactions.
Phenomenological approach is developed in the theory of spin-valve type ferromagnetic junctions to describe exchange switching by current flowing perpendicular to interfaces. Forward and backward current switching effects are described and they may be principally different in nature. Mobile electron spins are considered as being free in all the contacting ferromagnetic layers. Joint action of the following two current effects is investigated: the nonequilibrium longitudinal spin-injection effective field and the transverse spin-transfer surface torque. Dispersion relation for fluctuations is d…
We present a comprehensive study of the magnetic exchange Hamiltonian of elemental Gadolinium. We use neutron scattering to measure the magnon spectrum over the entire Brillouin zone, and fit the excitations to a spin wave model to extract the first 26 nearest neighbor magnetic exchange interactions with rigorously defined uncertainty. We find these exchange interactions to follow RKKY behavior, oscillating from ferromagnetic to antiferromagnetic as a function of distance. Finally, we discuss the topological features and degeneracies in Gd, and HCP ferromagnets in general. We show theoreticall…
We investigated the perpendicular exchange bias (PEB) switching from negative- to positive-exchange bias state for Cr2O3/Pt/Co exchange coupling thin film system exhibiting positive exchange bias phenomena. By changing Pt spacer layer thickness or measurements temperature, we demonstrated the control of two kind of intermediate state of the switching; the double hysteresis loop indicating local, non-averaged PEB, and single hysteresis loop indicating averaged PEB. We proposed the way to control the lateral ferromagnetic domain though the control of PEB magnitude.
Current-induced magnetic switching of a single magnetic molecule attached to two ferromagnetic contacts is considered theoretically, with the main emphasis put on the role of intrinsic spin relaxation processes. It is shown that spin-polarized current can switch magnetic moment of the molecule, despite of the intrinsic spin relaxation in the molecule. The latter processes increase the threshold voltage (current) above which the switching takes place.
Current-induced switching is considered in a magnetic junction. The junction includes pinned and free ferromagnetic layers which work in the regime of the high spin injection. It is shown that in such a regime the exchange magnetization reversal threshold can be lowered up to two times when the axes of the layers are noncollinear.
We study the heat-induced magnetization dynamics in a toy model of a ferrimagnetic alloy, which includes localized spins antiferromagnetically coupled to an itinerant carrier system with a Stoner gap. We determine the one-particle spin-density matrix including exchange scattering between localized and itinerant bands as well as scattering with phonons. While a transient ferromagnetic-like state can always be achieved by a sufficiently strong excitation, this transient ferromagnetic-like state only leads to magnetization switching for model parameters that also yield a compensation point in the…
The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT) /ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90 in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demon…
We have investigated Surface Acoustic Wave (SAW) induced ferromagnetic resonance (FMR) assisted Spin Transfer Torque (STT) switching of perpendicular MTJ (p-MTJ) with inhomogeneities using micromagnetic simulations that include the effect of thermal noise. With suitable frequency excitation, the SAW can induce ferromagnetic resonance in magnetostrictive materials, and the magnetization can precesses in a cone with high deflection from the perpendicular direction. With incorporation of inhomogeneity via lateral anisotropy variation as well as room temperature thermal noise, the magnetization pr…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier of ferromagnetic layer via electric field effect and efficiently switches p-MTJs only with a unipolar behavior. Here we demonstrate a bipolar electric field effect switching of 100-nm p-MTJs with a synthetic antiferromagnetic free layer through voltage-controlled exchange coupling (VCEC). The switching current density, ~1.1x10^5 A/cm^2, is one order of magni…
We test whether current-induced magnetization switching due to spin-transfer-torque in ferromagnetic/non-magnetic/ferromagnetic (F/N/F) trilayers changes significantly when scattering within the N-metal layers is changed from ballistic to diffusive. Here ballistic corresponds to a ratio r = lambda/t greater than or equal to 3 for a Cu spacer layer, and diffusive to r = lambda/t less than or equal to 0.4 for a CuGe alloy spacer layer, where lambda is the mean-free-path in the N-layer of fixed thickness t = 10 nm. The average switching currents for the alloy spacer layer are only modestly larger…
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or out-of-plane directions) have been demonstrated with novel magnetization switching mechanisms for extended device functionalities. Normally, the intrinsic magnetic anisotropy in ferromagnetic materials is unchanged within a fixed direction, and thus, it is difficult to realize multifunctionality devices. Therefore, continuous modulation of magnetic anisotropy in…
Strong ferromagnetic interlayer exchange couplings $J$ in perpendicularly magnetized systems are becoming increasingly desirable for applications. We study whether ferromagnetic interlayer exchange couplings can be measured by a combination of broadband ferromagnetic resonance methods and magnetometry hysteresis loops. For this we model the switching and the eigenexcitations in bilayer systems comprising a soft layer coupled to a thicker harder layer that possesses higher perpendicular magnetic anisotropy. For large $J >0$ the switching fields are essentially independent of $J$ but the frequen…
We have studied the influence of the magnetization on the superconducting transition temperature ($T_c$) in bi- and trilayers consisting of the half-metallic ferromagnet La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) and the high-temperature superconductor YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO). We have made use of tilted epitaxial growth in order to achieve contacts between the two materials that are partly in the crystallographic $ab$-plane of the YBCO. As a result of uniaxial magnetic anisotropy in the tilted structures, we observe sharp magnetization switching behavior. At temperatures close to $T_c$, the ma…
We demonstrate that light resonant with the bandgap forces the antiferromagnetic semiconducor EuSe to enter ferromagnetic alignment in the picosecond time scale. A photon generates an electron-hole pair, whose electron forms a supergiant spin polaron of magnetic moment of nearly 6,000 Bohr magnetons. By increasing the light intensity, the whole of the sample can be fully magnetized. The key to the novel large photoinduced magnetization mechanism is the huge enhancement of the magnetic susceptibility when both antiferromagnetic and ferromagnetic interactions are present in the material, and are…
We demonstrate a layer- and time-resolved measurement of ferromagnetic resonance (FMR) in a Ni81Fe19 / Cu / Co93Zr7 trilayer structure. Time-resolved x-ray magnetic circular dichroism has been developed in transmission, with resonant field excitation at a FMR frequency of 2.3 GHz. Small-angle (to 0.2 degree), time-domain magnetization precession could be observed directly, and resolved to individual layers through elemental contrast at Ni, Fe, and Co edges. The phase sensitivity allowed direct measurement of relative phase lags in the precession oscillations of individual elements and layers. …
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the ferromagnetic layer has in-plane magnetic anisotropy, probing such switching phenomenon typically relies on tunneling magnetoresistance measurement of nano-sized magnetic tunnel junctions, differential planar Hall voltage measurement, or Kerr imaging approaches. We show that in magnetic heterostructures with spin Hall metals, there exist current-induced in-plane spin Ha…
Rutile CrO2 is the most important half-metallic material with nearly 100% spin polarization at the Fermi level, and rutile TiO2 is a wide-gap semiconductor with many applications. Here we show through first-principles investigation that a single-unit-cell CrO2 layer on rutile TiO2 (001) surface is ferromagnetic and semiconductive with a gap of 0.54 eV, and its electronic state transits abruptly to a typical metallic state when an electrical field is applied. Consequently, this makes an interesting electrical switching effect which may be useful in designing spintronic devices.
