arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0708.3229cond-mat.mtrl-sci
收藏

电流感生磁化开关中的弹道输运与扩散输运

Ballistic vs Diffusive Transport in Current-Induced Magnetization Switching

N. Theodoropoulou, A. Sharma, W. P. Pratt, J. Bass, M. D. Stiles, J. Xiao

摘要:

我们测试是否由于自旋转移力矩在铁磁/非磁性/铁磁(F/N/F)三层的电流感应磁化开关显着变化时,N-金属层内的散射从弹道改变为扩散。这里,对于Cu间隔层,弹道对应于大于或等于3的比率r = λ/t,而对于CuGe合金间隔层,扩散对应于小于或等于0.4的比率r = λ/t,其中λ是固定厚度t = 10 nm的N层中的平均自由程。合金间隔层的平均开关电流仅略微大于Cu的平均开关电流。最好的可用模型预测的开关电流在间隔层中的漫散射比我们看到的更大的灵敏度。

英文摘要:

We test whether current-induced magnetization switching due to spin-transfer-torque in ferromagnetic/non-magnetic/ferromagnetic (F/N/F) trilayers changes significantly when scattering within the N-metal layers is changed from ballistic to diffusive. Here ballistic corresponds to a ratio r = lambda/t greater than or equal to 3 for a Cu spacer layer, and diffusive to r = lambda/t less than or equal to 0.4 for a CuGe alloy spacer layer, where lambda is the mean-free-path in the N-layer of fixed thickness t = 10 nm. The average switching currents for the alloy spacer layer are only modestly larger than those for Cu. The best available model predicts a much greater sensitivity of the switching currents to diffuse scattering in the spacer layer than we see.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑