arXiv 2510.134352025-10-15cond-mat.mtrl-sci

在硅基上集成无压痕和低矫顽力的铁电BaTiO3薄膜

Integration of imprint-free and low coercivity ferroelectric BaTiO3 thin films on silicon

University of Groningen（格罗宁根大学）

Jingtian Zhao, Beatriz Noheda, Martin F. Sarott

备注：: Submitted manuscript, 23 pages, 4 figures
DOI：: 10.1021/acs.nanolett.5c05139

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AI总结：

本研究通过在SrTiO3缓冲层上插入SrSn1-xTixO3层，在硅基上生长出单晶BaTiO3薄膜，实现了无压痕开关、低矫顽力、高剩极化和10^10次开关循环后无疲劳的性能，为硅基低功耗铁电器件制备奠定基础。

摘要：

高度结晶的铁电氧化物在硅基上集成具有高效内存和逻辑技术的潜力。然而，在硅基上利用这些材料的晶格应变工程受到严重阻碍，因为硅基的较大结构不匹配通常导致界面质量差，从而导致铁电开关特性劣化。在本工作中，我们通过在SrTiO3缓冲的硅基上插入SrSn1-xTixO3层，实现了单晶BaTiO3薄膜的生长，该薄膜表现出无压痕开关、低矫顽力、高剩极化和超过10^10次开关循环后的无疲劳特性。我们通过该层作为伪基板，缓解了硅基对BaTiO3层施加的热应变，同时提供适度的压应变，稳定了纯平面极化。因此，本工作为硅基兼容、低功耗铁电器件的制备铺平了道路。

英文摘要：

Highly-crystalline ferroelectric oxides integrated on Si hold great promise for energy-efficient memory and logic technologies. Exploiting epitaxial strain engineering in these materials is, however, severely hampered on Si, where the large structural mismatch often results in an inferior interfacial quality and causes a degradation of the ferroelectric switching characteristics. In this work, we present the growth of single-crystalline BaTiO3 thin films on Si, exhibiting imprint-free switching, low coercivity, high remanent polarization, and no fatigue for over $10^{10}$ switching cycles. We accomplish this via the insertion of a SrSn1-xTixO3 layer on SrTiO3-buffered Si. This layer serves as a pseudo substrate that alleviates the thermal strain that the Si substrates imposes on the BaTiO3 layer, while simultaneously providing moderate compressive strain that stabilizes a pure out-of-plane polarization. Thus, our work paves the way toward the fabrication of Si-compatible, low-power-consuming ferroelectric devices for non-volatile memory applications.

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