部分开关纤锌矿铁电体中三百万年的反向状态数据保留

中文摘要 AI 辅助

基于纤锌矿结构铁电体的铁电存储器预计在150℃下可存储信息超过三百万年。这些结果是通过将标准畴壁运动受限的开关动力学与铁电随机存取存储器中反向状态保留的近电极注入模型相结合得出的。仅切换总极化的一部分来存储数据，有助于限制器件的初始印记变化，不同厚度（60纳米 - 270纳米）和不同化合物（AlScN和AlScBN）的薄膜中均普遍观察到这种效果。与完全开关状态相比，这种初始印记的减少在给定时间后始终会导致更大的开关极化和5 - 7个数量级的反向状态保留改善。最后，部分开关能够同时提高抗过早极化损失和击穿的耐久性，使其成为改善具有大自发极化的铁电器件，特别是纤锌矿结构化合物操作的有前景策略。

英文摘要

Ferroelectric memories based on the wurtzite-structured ferroelectrics are projected to store information for more than 3 million years at 150C. These results are extracted by combining standard domain wall motion limited switching kinetics with the near-by-electrode injection model for opposite state retention in ferroelectric random access memory. This impressive performance is greatly aided by switching only a fraction of the total polarization to store data, in order to limit the initial imprint variation of the devices - an effect that is universally observed in films with different thicknesses (60 nm - 270 nm) and different compounds (AlScN and AlScBN). Paradoxically, yet systematically, this reduction in initial imprint consistently results in larger switching polarization after a given time, compared to the fully switching state and 5-7 orders of magnitude improved opposite state retention. Finally, partial switching is able to simultaneously boost endurance against premature polarization loss and breakdown, making it a promising strategy for improved operation of ferroelectric devices with large spontaneous polarization, in particularly wurtzite-structured compounds.

发表机构

• University of Kiel（基尔大学）
• NaMLab gGmbH（NaMLab有限公司）
• Fraunhofer Institute for Silicon Technology（弗劳恩霍夫硅技术研究所）
• TU Dresden（德累斯顿工业大学）

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