CVD grown bilayer MoS2 based artificial optoelectronic synapses for arithmetic computing and image recognition applications
Indian Institute of Technology, Bombay（孟买印度理工学院）；National Institute for Materials Science（日本国立材料研究所）；Jackson State University（杰克逊州立大学）；Institute of Physics, Bhubaneswar（布巴内斯瓦尔物理研究所）；Homi Bhabha National Institute（霍米·巴巴国家研究所）
Demand for lower computing power has rapidly increased. In this context, brain-inspired neuromorphic computing, which integrate data storage and processing, has attracted significant attention. Here, our study reveals that field effect transistors fabricated on chemical vapor deposited bilayer (2L) MoS2 films can mimic the functions of biological synapse. These devices demonstrate high level of pair pulse facilitation (PPF), short term to long term memory (STM-to-LTM) transition as well as learning-forgetting-relearning properties. Effect of light intensity, pulse number, pulse width and photon energy on the STM-to-LTM transition is studied. It has been found that the rate of depression of the memory state can be controlled using the gate bias. Electrical and optical energy consumptions per synaptic event are estimated to be as low as 280 fJ and 20 nJ, respectively. Furthermore, photocurrent in these devices is observed to increase linearly with the number of the excitation pulses. This property has been exploited to demonstrate different arithmetic operations by the device. Moreover, these devices show great potential for image recognition. Artificial neural network simulation has returned an image recognition accuracy of ~85%. All these findings show a great prospect of 2L-MoS2 for developing low power, transparent and flexible neuromorphic devices.
Energy-efficient, Reconfigurable Optoelectronic Artificial Synapses Based on MoWS$_2$ Alloy for Pattern Recognition and Color Image Filtering Applications
Indian Institute of Technology Kharagpur（印度理工学院卡拉格普尔分校）
Raman spectroscopic characterization of stacking configuration and interlayer coupling of twisted multilayer graphene grown by chemical vapor deposition
Effects of CVD Growth Parameters on Global and Local Optical Properties of MoS$_2$ Monolayers
Institute of Physics, Center for Advanced Laser Techniques and Center of Excellence for Advanced Materials and Sensing Devices（物理研究所，先进激光技术中心与先进材料与传感设备卓越中心）；Faculty of Physics, University of Rijeka（里耶卡大学物理学院）；University of Vienna, Faculty of Physics, Vienna Center for Quantum Science and Technology (VCQ)（维也纳大学物理学院，维也纳量子科学与技术中心）
Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning
Xidian University（西安电子科技大学）；University of Delaware（特拉华大学）；Institute of Semiconductors, Chinese Academy of Sciences（中国科学院半导体研究所）；Nanjing Normal University（南京师范大学）；Northwestern Polytechnical University（西北工业大学）
Intrinsic Electric Field Driven High Sensitive Photodetection in Alloy TMDC MoSSe
Institute for Basic Science (IBS)（韩国基础科学研究所）；Bose Institute（玻色研究所）；S.N. Bose National Centre for Basic Sciences（S.N. 玻色基础科学国家中心）；Indian Institute of Science Education and Research Kolkata（印度科学教育研究学院加尔各答分校）；Indian Institute of Technology Bhubaneswar（印度技术学院布巴内斯瓦尔分校）；Central University of Kashmir（克什米尔中央大学）
