Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable magnetization switching. When a constant voltage is applied, we find that the spin-transfer torque can only switch the FiM-MTJ from parallel to antiparallel state. This stems from the small switching window of FiM and the dynamic resistance variation during the magnetization switching. We find the resulting current variation can be suppressed by reducing the magnetoresistance ratio. Furthermore, we demonstrate that the switching window can be expanded by adjusting the amount of Gd in FiM. We predict that the polarity of both switching current (Jc,switch) and oscillation current (Jc,osc) reverses at the angular momentum compensation point but not the magnetization compensation point. This anomalous dynamic behavior is attributed to the different physical nature of magnetization switching and oscillation in FiM, which must be considered when designing FiM-based MRAM.
Both helicity-independent and helicity-dependent all-optical switching processes driven by single ultrashort laser pulse have been experimentally demonstrated in ferrimagnetic alloys as GdFeCo. Although the switching has been previously reproduced by atomistic simulations, the lack of a robust micromagnetic framework for ferrimagnets limits the predictions to small nano-systems, whereas the experiments are usually performed with lasers and samples of tens of micrometers. Here we develop a micromagnetic model based on the extended Landau-Lifshitz-Bloch equation, which is firstly validated by di…
Strong, adjustable magnetic couplings are of great importance to all devices based on magnetic materials. Controlling the coupling between adjacent regions of a single magnetic layer, however, is challenging. In this work, we demonstrate strong exchange-based coupling between arbitrarily shaped regions of a single ferrimagnetic layer. This is achieved by spatially patterning the compensation temperature of the ferrimagnet by either oxidation or He+ irradiation. The coupling originates at the lateral interface between regions with different compensation temperature and scales inversely with the…
We present an experimental and theoretical investigation of all-optical switching by single femtosecond laser pulses. Our experimental results demonstrate that, unlike rare earth-transition metal ferrimagnetic alloys, Pt/Co/[Ni/Co]$_N$/Gd can be switched in the absence of a magnetization compensation temperature, indicative for strikingly different switching conditions. In order to understand the underlying mechanism, we model the laser-induced magnetization dynamics in Co/Gd bilayers and GdCo alloys on an equal footing, using an extension of the microscopic three-temperature model to multiple…
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we reported bias-field-free SOT switching in a single perpendicular CoTb layer with an eng…
We review and discuss the process of single-shot helicity-independent all-optical switching of magnetization by which a single suitably-ultrafast excitation, under the right conditions, toggles magnetization from one stable state to another. For almost a decade, this phenomenon was only consistently observed in specific rare-earth-transition-metal ferrimagnetic alloys of GdFeCo, but breakthrough experiments in recent years have revealed that the same behavior can be achieved in a wide range of multi-sublattice magnets including TbCo alloys doped with minute amounts of Gd, Gd/Co and Tb/Co synth…
研究了富过渡金属（TM）和富稀土（RE）两种结构的亚铁磁性Gd $_x$（Fe $_{90}$ Co $_{10}$）$_{100-x}$薄膜的自旋-轨道转矩开关。自旋-轨道扭矩驱动的磁化切换遵循相同的偏手性在TM-丰富和RE-丰富的样品相对于总磁化，但偏手性的切换是相反的相对于TM磁化。这表明自旋-轨道-转矩驱动的磁切换的符号遵循总磁化，尽管基于输运的技术（诸如异常霍尔效应）仅对过渡金属磁化敏感。这些结果为研究反铁磁耦合亚晶格材料中自旋角动量转移的物理性质提供了重要的理论依据。
We present a study of the transport properties of thermally generated spin currents in an insulating ferrimagnetic-antiferromagnetic-ferrimagnetic trilayer over a wide range of temperature. Spin currents generated by the spin Seebeck effect (SSE) in a yttrium iron garnet (YIG) YIG/NiO/YIG trilayer on a gadolinium gallium garnet (GGG) substrate were detected using the inverse spin Hall effect in Pt. By studying samples with different NiO thicknesses, the NiO spin diffusion length was determined to be 4.2 nm at room temperature. Interestingly, below 30 K, the inverse spin Hall signals are associ…
The inverse spinel ferrimagnetic NiCo$_2$O$_4$ possesses high magnetic Curie temperature $T_C$, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the thickness scaling limit of these intriguing magnetic properties in NiCo$_2$O$_4$ thin films is critical for their implementation in nanoscale spintronic applications. In this work, we report the unconventional magnetotransport properties of epitaxial (001) NiCo$_2$O$_4$ films on MgAl$_2$O$_4$ substrates in the ultrathin limit. Anomalous Hall effect measurements reveal strong perpendicular magnetic anisotropy for films …
Spin-orbitronics and single pulse all-optical switching (AOS) of magnetization are two major successes of the rapidly advancing field of nanomagnetism in recent years, with high potential for enabling novel, fast and energy-efficient memory and logic platforms. Fast current-induced domain wall motion (CIDWM) and single shot AOS have been individually demonstrated in different ferrimagnetic alloys. However, the stringent requirement for their composition control makes these alloys challenging materials for wafer-scale production. Here, we simultaneously demonstrate fast CIDWM and energy efficie…
FeTaX2: A ferrimagnetic quantum anomalous Hall insulator
Fudan University（复旦大学）；Shanghai Research Center for Quantum Sciences（上海量子科学研究中心）；Institute for Nanoelectronic Devices and Quantum Computing, Fudan University（复旦大学纳米电子器件与量子计算研究所）；Hefei National Laboratory（合肥国家实验室）
Although all-optical magnetization switching with fs laser pulses has garnered much technological interest, the ultimate data rates achievable have scarcely been investigated. Recently it has been shown that after a switching event in a GdCo alloy, a second laser pulse arriving 7 ps later can consistently switch the magnetization. However, it is as of yet unknown whether the same holds in layered ferrimagnetic systems, which hold much promise for applications. In this work we investigate the minimum time delay required between two subsequent switching events in synthetic ferrimagnetic Co/Gd bi…
To realize the quantum anomalous Hall effect (QAHE) at elevated temperatures, the approach of magnetic proximity effect (MPE) was adopted to break the time-reversal symmetry in the topological insulator (Bi0.3Sb0.7)2Te3 (BST) based heterostructures with a ferrimagnetic insulator europium iron garnet (EuIG) of perpendicular magnetic anisotropy. Here we demonstrate phenomenally large anomalous Hall resistance (RAHE) exceeding 8 Ω (\r{ho}AHE of 3.2 μΩ*cm) at 300 K and sustaining to 400 K in 35 BST/EuIG samples, surpassing the past record of 0.28 Ω (\r{ho}AHE of 0.14 μΩ*cm) at 300 K. The remarkabl…
A theory of magnetization dynamics in ferrimagnetic materials with antiparallel aligned spin sub-lattices under action of spin-transfer torques (STT) is developed. We consider magnetization dynamics in GdFeCo layers in two cases of magnetic anisotropy: easy plane and easy axis. We demonstrate that, (i) for the easy plane anisotropy the precession of the Néel vector is conical and the cone angle depends on the STT strength and the value of spin non-compensation, while the frequency of precession can reach sub-THz frequencies; (ii) for the easy axis anisotropy two regimes are possible: determini…
In spintronics, it is important to be able to manipulate magnetization rapidly and reliably. Several methods can control magnetization, such as by applying current pulses or magnetic fields. An applied current can reverse magnetization with nanosecond speed through the spin torque effect. For faster switching, subpicosecond switching with femtoseconds laser pulse has been achieved in amorphous rare-earth transition-metal ferrimagnets. In this study, we employed atomistic simulations to investigate ultrafast switching in a synthetic antiferromagnet with bilayer amorphous FeGd ferrimagnets. Usin…
Spintronics provides an efficient platform for realizing non-volatile memory and logic devices. In these systems, data is stored in the magnetization of magnetic materials, and magnetization is switched in the writing process. In conventional spintronic devices, ferromagnetic materials are used which have a magnetization dynamics timescale of around the nanoseconds, setting a limit for the switching speed. Increasing the magnetization switching speed has been one of the challenges in spintronic research. In this work we take advantage of the ultrafast magnetization dynamics in ferrimagnetic ma…
We report on the observation of non-metallic electrical conduction, resistive switching, and a negative temperature coefficient of resistance in cluster-assembled nanostructured gold films above the electrical percolation and in strong-coupling regime, from room to cryogenic temperatures (24K). The structure of the films is characterized by an extremely high density of randomly oriented crystalline nanodomains, separated by grain boundaries. The observed behavior can be explained by considering space charge limited conduction and Coulomb blockade phenomena highlighting the influence of the hig…
The Hall effect arises when time reversal symmetry is broken by either intrinsic magnetism or an external magnetic field. The latter contribution dominates in non-magnetic materials, in which the angular dependence of the Hall effect is typically a smooth cosine function because only the out-of-plane projection of the field generates the in-plane transverse motion of electrons. Here, we report the observation of an abrupt switching of the Hall effect by field rotation in a non-magnetic material, ZrTe5. The angular dependence of the Hall resistivity approaches a signum function, persisting down…
Sub-picosecond magnetisation manipulation via femtosecond optical pumping has attracted wide attention ever since its original discovery in 1996. However, the spatial evolution of the magnetisation is not yet well understood, in part due to the difficulty in experimentally probing such rapid dynamics. Here, we find evidence of rapid magnetic order recovery in materials with perpendicular magnetic anisotropy via nonlinear magnon processes. We identify both localisation and coalescence regimes, whereby localised magnetic textures nucleate and subsequently evolve in accordance with a power law fo…
Spin-orbit torques (SOT) allow the electrical control of magnetic states. Current-induced SOT switching of the perpendicular magnetization is of particular technological importance. The SOT consists of damping-like and field-like torques so that the efficient SOT switching requires to understand combined effects of the two torque-components. Previous quasi-static measurements have reported an increased switching probability with the width of current pulses, as predicted with considering the damping-like torque only. Here we report a decreased switching probability at longer pulse-widths, based…
We quantitatively evaluate a spin anomalous Hall effect (SAHE), generating spin angular momentum flow (spin current, $J_{\rm s}$), in an L1$\rm_{0}$-FePt ferromagnet by exploiting giant magnetoresistance devices with L1$\rm_{0}$-FePt / Cu / Ni$\rm_{81}$Fe$\rm_{19}$ . From the ferromagnetic resonance linewidth modulated by the charge current ($J_{\rm c}$) injection, the spin anomalous Hall angle ($ α_{\rm SAH} $) is obtained to be 0.25 $ \pm $ 0.03. The evaluation of $ α_{\rm SAH} $ at different configurations between $J_{\rm c}$ and magnetization enables us to discuss the symmetry of SAHE and …
Graphene features topological edge bands that connect the pair of Dirac points through either sectors of the 1D Brillouin zone depending on edge configurations (zigzag or bearded). Because of their flat dispersion, spontaneous edge magnetisation can arise from Coulomb interaction in graphene nanoribbons, which has caught remarkable interest. We find an anomalous Bloch oscillation in such edge bands, in which the flat dispersion freezes electron motion along the field direction, while the topological connection of the bands through the bulk leads to electron oscillation in the transverse direct…
Among van der Waals (vdW) layered ferromagnets, Fe3GeTe2 (FGT) is an excellent candidate material to form FGT/heavy metal heterostructures for studying the effect of spin-orbit torques (SOT). Its metallicity, strong perpendicular magnetic anisotropy built in the single atomic layers, relatively high Curie temperature (Tc about 225 K) and electrostatic gate tunability offer a tantalizing possibility of achieving the ultimate high SOT limit in monolayer all-vdW nanodevices. The spin current generated in Pt exerts a damping-like SOT on FGT magnetization. At about 2.5x1011 A/m2 current density,SOT…
We discuss the effects of thermal noise on the magnetic response of a lateral ferromagnetic Josephson junction with spin-orbit coupling and out-of-plane magnetization. The direction of the magnetic moment in the ferromagnetic layer can be inverted by using controlled current pulses. This phenomenon is due to the magnetoelectric effect that couples the flowing charge current and the magnetization of the ferromagnet. We investigate the magnetization reversal effect versus intrinsic parameters of the ferromagnet, such as the Gilbert damping and strength of the spin-orbit coupling. We estimate the…
Metal-to-Insulator Switching in Quantum Anomalous Hall States
经过几十年对无外磁场条件下无耗散输运的探索，最近在磁性拓扑绝缘体（TI）薄膜中实现了量子反常霍尔效应（QAHE）。然而，QAHE的普适相图及其与量子霍尔效应（QHE）的关系还有待研究。本文报道了在六层五层（Cr0.12Bi0.26Sb0.62）2 Te 3薄膜中，在矫顽场下观察到的巨纵向电阻峰和零霍尔电导平台，并证明了在0.3K温度下，金属-绝缘体在两个相反的QAHE平台态之间的转换.此外，通用QAHE相图是通过角度相关的测量实现的。我们的结果表明，量子相变在QAHE和QHE制度是在同一普适类，但微观细节是不同的。此外，QAHE绝缘态的实现揭示了探索量子相位相关物理和应用的新方法。
A femtosecond laser pulse is able to switch the magnetic state of a 3d-4f ferrimagnetic material on a pico-second time scale. Devices based on this all-optical switching (AOS) mechanism are competitive candidates for ultrafast memory applications. However, a large portion of the light energy is lost by reflection from the metal thin film as well as transmission to the substrate. In this paper, we explore the use of dielectric coatings to increase the light absorption by the magnetic metal layer based on the principle of constructive interference. We experimentally show that the switching energ…
It is observed experimentally that the sign of the Hall resistance can be flipped by a dc electric current in the twisted bilayer graphene (TBG) at 3/4 filling of the four-fold degenerate conduction flat bands. The experiment implies a switching of the valley polarization (VP) and topology in TBG. Here we present a theory on the current-induced switching of VP and topology. The presence of current in the bulk causes {the} redistribution of {electron occupation} in bands near the Fermi energy, which then deforms and shifts the band dispersion due to the Coulomb interaction. Above a critical cur…
