磁畴壁对亚铁磁GdFe薄膜中全光磁 toggle 开关的影响
Influence of magnetic domain walls on all-optical magnetic toggle switching in a ferrimagnetic GdFe film
AI总结：
本研究通过显微成像探究亚铁磁GdFe薄膜全光toggle开关中磁畴壁的影响，揭示了畴壁弹性与激光诱导畴壁运动导致开关局域非确定性的内在机制。
摘要：
我们利用X射线磁圆二色性光电子发射显微镜，对具有垂直磁易轴的亚铁磁Gd₂₆Fe₇₄薄膜的单次全光磁toggle开关进行了微观磁畴成像研究。波长800 nm、脉宽100 fs的线偏振激光脉冲，在能量密度超过特定阈值时会反转样品磁化方向，且与初始磁化方向无关，即所谓的toggle开关。我们详细研究了磁畴壁附近偏离这种确定性行为的局域现象。非确定性toggle开关的成因分为两类：一类是外在效应，由激发激光系统的脉冲间波动导致；另一类是与样品磁畴结构相关的内在效应。后者一方面源于磁畴壁弹性，它会使尖端状结构处的畴壁长度缩短；这些结构出现在光开关后、激光脉冲高斯光斑内的恒定阈值能量密度线与已有畴壁靠近的位置。另一方面，我们发现toggle开关过程中存在激光诱导的畴壁运动，这是局域偏离纯确定性toggle开关的另一原因。
英文摘要：
We present a microscopic magnetic domain imaging study of single-shot all-optical magnetic toggle switching of a ferrimagnetic Gd$_{26}$Fe$_{74}$ film with out-of-plane easy axis of magnetization by x-ray magnetic circular dichroism photoelectron emission microscopy. Individual linearly polarized laser pulses of 800 nm wavelength and 100 fs duration above a certain threshold fluence reverse the sample magnetization, independent of the magnetization direction, the so-called toggle switching. Local deviations from this deterministic behavior close to magnetic domain walls are studied in detail. Reasons for nondeterministic toggle switching are related to extrinsic effects, caused by pulse-to-pulse variations of the exciting laser system, and to intrinsic effects related to the magnetic domain structure of the sample. The latter are, on the one hand, caused by magnetic domain wall elasticity, which leads to a reduction of the domain-wall length at sharp tipped features. These features appear after the optical switching at positions where the line of constant threshold fluence in the Gaussian footprint of the laser pulse comes close to an already-existing domain wall. On the other hand, we identify the presence of laser-induced domain-wall motion in the toggle-switching event as a further cause for local deviations from purely deterministic toggle switching.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
