Characterizing the chemical potential disorder in the topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ thin films
Jens Brede, Mahasweta Bagchi, Adrian Greichgauer, Anjana Uday, Andrea Bliesener, Gertjan Lippertz, Roozbeh Yazdanpanah, Alexey Taskin, Yoichi Ando
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23 pages total; 13 pages of main text with 9 figures, 10 pages of supplement with 10 figures. The raw data are available at the online depository Zenodo with the identifier https://doi.org/10.5281/zenodo.13889543
We use scanning tunneling microscopy and spectroscopy under ultra-high vacuum and down to 1.7 K to study the local variations of the chemical potential on the surface of the topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ thin films (thickness 7 - 30 nm) with varying Sb-concentration $x$, to gain insight into the charge puddles formed in thin films of a compensated topological insulator. We found that the amplitude of the potential fluctuations, $Γ$, is between 5 to 14 meV for quasi-bulk conducting films and about 30 - 40 meV for bulk-insulating films. The length scale of the fluctuations, $λ$, was found to span the range of 13 - 54 nm, with no clear correlation with $Γ$. Applying a magnetic field normal to the surface, we observe the condensation of the two-dimensional topological surface state into Landau levels and find a weak but positive correlation between $Γ$ and the spectral width of the Landau-level peaks, which suggests that quantum smearing from drift motion is the source of the Landau level broadening. Our systematic measurements give useful guidelines for realizing $(\mathrm{Bi}_{1-x}\mathrm{Sb}_x)_2\mathrm{Te}_3$ thin films with an acceptable level of potential fluctuations. In particular, we found that $x\approx 0.65$ realizes the situation where $Γ$ shows a comparatively small value of 14 meV and the Dirac point lies within $\sim$10 meV of the Fermi energy.
Three-dimensional topological insulators feature Dirac-like surface states which are topologically protected against the influence of weak quenched disorder. Here we investigate the effect of surface disorder beyond the weak-disorder limit using large-scale numerical simulations. We find two qualitatively distinct regimes: Moderate disorder destroys the Dirac cone and induces diffusive metallic behavior at the surface. Even more remarkably, for strong surface disorder a Dirac cone reappears, as new weakly disordered "surface" states emerge in the sample beneath the disordered surface layer, wh…
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The Friedel oscillations resulting from coupling a quantum dot to one edge of a disordered one-dimensional wire in the Mott insulator regime, are calculated numerically using the DMRG method. By investigating the influence of the disorder on the Friedel oscillations decay we find that the effect of disorder is reduced by increasing the interaction strength. This behavior is opposite to the recently reported influence of disorder in the Anderson insulator regime, where disorder led to a stronger decay of the Friedel oscillations.
The disorder-driven metal-insulator transition in the quantum spin Hall systems is studied by scaling analysis of the Thouless conductance $g$. Below a critical disorder strength, the conductance is independent of the sample size $M$, an indication of critically delocalized electron states. The calculated beta function $β=d\ln g/d\ln M$ indicates that the metal-insulator transition is Kosterlitz-Thouless (KT) type, which is characterized by bounding and unbounding of vortex-antivortex pairs of the local currents. The KT like metal-insulator transition is a basic characteristic of the quantum s…
Topological insulators in three dimensions are characterized by a Z2-valued topological invariant, which consists of a strong index and three weak indices. In the presence of disorder, only the strong index survives. This paper studies the topological invariant in disordered three-dimensional system by viewing it as a super-cell of an infinite periodic system. As an application of this method we show that the strong index becomes non-trivial when strong enough disorder is introduced into a trivial insulator with spin-orbit coupling, realizing a strong topological Anderson insulator. We also nu…
We analyse the topological transition and localization evolution of disordered two dimensional systems with non trivial topology based on bipartite lattices. Chern insulators with broken time reversal symmetry show non standard behavior for disorder realizations selectively distributed on only one of the sublattices. The Chern number survives to a much stronger disorder strength (one order of magnitude higher) than in the equally distributed disordered case and the final state in the strongly disordered case is metallic.
Enhancement of the dielectric response of insulators by disorder is theoretically proposed, where the quantum interference of electronic waves through the nanoscale/mesoscopic system and its change due to external perturbations control the polarization. In the disordered case with all the states being localized, the resonant tunneling, which is topologically protected, plays a crucial role, and enhances the dielectric response by a factor 30~40 compared with the pure case. Realization of this idea with accessible materials/structures is also discussed.
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Disorder, ubiquitously present in solids, is normally detrimental to the stability of ordered states of matter. In this letter we demonstrate that not only is the physics of a strong topological insulator robust to disorder but, remarkably, under certain conditions disorder can become fundamentally responsible for its existence. We show that disorder, when sufficiently strong, can transform an ordinary metal with strong spin-orbit coupling into a strong topological `Anderson' insulator, a new topological phase of quantum matter in three dimensions.
The disorder effects on higher-order topological phases in periodic systems have attracted much attention. However, in aperiodic systems, such as quasicrystalline systems, the interplay between disorder and higher-order topology is still unclear. In this paper, we investigate the effects of disorder on two types of second-order topological insulators, including a quasicrystalline quadrupole insulator and a modified quantum spin Hall insulator, in a two-dimensional Amman-Beenker tiling quasicrystalline lattice. We demonstrate that the higher-order topological insulators are robust against weak …
To harness the true potential of topological insulators as quantum materials for information processing, it is imperative to maximise topological surface state conduction, while simulateneously improving their quantum coherence. However, these goals have turned out to be contradictory. Surface dominated transport in topological insulators has been achieved primarily through compensation doping of bulk carriers that introduces tremendous electronic disorder and drastically deteriorates electronic coherence. In this work, we use structural disorder instead of electronic disorder to manipulate el…
Clean topological insulators exposed to a magnetic field develop Landau levels accompanied by a nonzero Hall conductivity for the infinite slab geometry. In this work we consider the case of disordered topological insulator nanowires and find, in contrast, that a zero Hall plateau emerges within a broad energy window close to the Dirac point. We numerically calculate the conductance and its distribution for a statistical ensemble of disordered nanowires, and use the conductance fluctuations to study the dependence of the insulating phase on system parameters, such as the nanowire length, disor…
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Abstract: Using ab initio calculations supported by experimental transport measurements, we present the first credible candidate for the realization of a disorder-induced Topological Anderson Insulator in a real material system. High energy reactive ball-milling produces a polymorph of Cu2ZnSnS4 with high cation disorder, which shows an inverted ordering of bands at the Brillouin zone center, in contrast to its ordered phase. Adiabatic continuity arguments establish that this disordered Cu2ZnSnS4 can be connected to the closely related Cu2ZnSnSe4, previously predicted to be a 3D topological in…
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We investigate the possibility of realizing a disorder-induced topological Floquet spectrum in two-dimensional periodically-driven systems. Such a state would be a dynamical realization of the topological Anderson insulator. We establish that a disorder-induced trivial-to-topological transition indeed occurs, and characterize it by computing the disorder averaged Bott index, suitably defined for the time-dependent system. The presence of edge states in the topological state is confirmed by exact numerical time-evolution of wavepackets on the edge of the system. We consider the optimal driving …
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Scanning tunneling spectroscopy at very low temperature on homogeneously disordered superconducting Titanium Nitride thin films reveals strong spatial inhomogeneities of the superconducting gap $Δ$ in the density of states. Upon increasing disorder, we observe suppression of the superconducting critical temperature $T_c$ towards zero, enhancement of spatial fluctuations in $Δ$, and growth of the $Δ/T_c$ ratio. These findings suggest that local superconductivity survives across the disorder-driven superconductor-insulator transition.
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In this numerical study we investigate the influence and interplay of disorder, spin-orbit coupling and magnetic field on the edge-transport in HgTe/CdTe quantum wells in the framework of coherent elastic scattering. We show that the edge states remain unaffected by the combined effect of moderate disorder and a weak magnetic field at realistic spin-orbit coupling strengths. Agreement with the experimentally observed linear magnetic field dependence for the conductance of long samples is obtained when considering the existence of charge puddles.
The role of disorder in the field of three-dimensional time reversal invariant topological insulators has become an active field of research recently. However, the computation of Z2 invariants for large, disordered systems still poses a considerable challenge. In this paper we apply and extend a recently proposed method based on the scattering matrix approach, which allows the study of large systems at reasonable computational effort with few-channel leads. By computing the Z2 invariant directly for the disordered topological Anderson insulator, we unambiguously identify the topological nature…
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A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around h/e^2 and critical carrier densities of 1.2 10^11cm^-2. Effects of electron-electron interactions are expected to be rather weak in our samples, while disorder plays a crucial role.
Two-dimensional Na$_3$Bi is a dual topological insulator protected by time-reversal and mirror symmetry, resulting in a promising platform for devices design. However, in reality, the design of topological devices is hindered by a sensitivity against disorder and temperature. We study the topological properties of Na$_3$Bi in the presence of intrinsic defects, investigating the robustness of the edge states and the resulting transport properties. We apply a recursive Green's function technique enabling the study of disordered systems with lengths comparable to experimentally synthesized materi…
Disorder effects on three-dimensional second-order topological insulators (3DSOTIs) are investigated numerically and analytically. The study is based on a tight-binding Hamiltonian for non-interacting electrons on a cubic lattice with a reflection symmetry that supports a 3DSOTI in the absence of disorder. Interestingly, unlike the disorder effects on a topological trivial system that can only be either a diffusive metal (DM) or an Anderson insulator (AI), disorders can sequentially induce four phases of 3DSOTIs, three-dimensional first-order topologicalinsulators (3DFOTIs), DMs and AIs. At a …
We investigate the scattering and localization properties of edge and bulk states in a disordered two-dimensional topological insulator when they coexist at the same fermi energy. Due to edge-bulk backscattering (which is not prohibited \emph{a priori} by topology or symmetry), Anderson disorder makes the edge and bulk states localized indistinguishably. Two methods are proposed to effectively decouple them and to restore robust transport. The first kind of decouple is from long range disorder, since edge and bulk states are well separated in $k$ space. The second one is from an edge gating, o…
We study theoretically the role of quenched magnetic disorder at the surface of a topological insulator by numerical simulation and scaling analysis. It is found that all the surface states are localized while the transverse conductivity is quantized to be $\pm {{e^2} \over {2 h}}$ as long as the Fermi energy is within the bulk gap. This greatly facilitates the realization of the topological magnetoelectric effect proposed by Qi {\it et al.} (Phys. Rev. B\textbf{78}, 195424 (2008)) with the surface magnetization direction being controlled by the simultaneous application of magnetic and electri…
We studied effects of disorder in a three dimensional layered Chern insulator. By calculating the localization length and density of states numerically, we found two distict types of metallic phases between Anderson insulator and Chern insulator; one is diffusive metallic (DM) phase and the other is renormalized Weyl semimetal (WSM) phase. We show that longitudinal conductivity at the zero energy state remains finite in the renormalizd WSM phase as well as in the DM phase, while goes to zero at a semimetal-metal quantum phase transition point between these two. Based on the Einstein relation c…
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