arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2409.07421quant-phcond-mat.mtrl-sci
收藏

金刚石中单个IV族色心的激光激活

Laser Activation of Single Group-IV Colour Centres in Diamond

Xingrui Cheng, Andreas Thurn, Guangzhao Chen, Gareth S. Jones, Maddison Coke, Mason Adshead, Cathryn P. Michaels, Osman Balci, Andrea C. Ferrari, Mete Atatüre, … 展开作者

Xingrui Cheng, Andreas Thurn, Guangzhao Chen, Gareth S. Jones, Maddison Coke, Mason Adshead, Cathryn P. Michaels, Osman Balci, Andrea C. Ferrari, Mete Atatüre, Richard Curry, Jason M. Smith, Patrick S. Salter, Dorian A. Gangloff

AI总结:

针对量子网络用金刚石IV族色心的单缺陷精准定位激活难题,提出结合位点控制离子注入与原位光谱监测飞秒激光退火的两步法,实现单个SnV-中心的位点选择性创建修饰,可推广至其他宽禁带材料色心制备。

摘要:

基于金刚石中IV族色心的自旋-光子接口为量子网络提供了极具前景的平台。该领域的一项关键挑战是实现精准的单缺陷定位与激活,这对可扩展器件制造至关重要。本文中我们通过展示一种锡空位(SnV-)中心的两步制备方法解决了这一问题,该方法采用位点控制的离子注入,随后结合原位光谱监测进行局部飞秒激光退火。离子注入以低于50 nm的分辨率执行,剂量可从每个位点数百个离子控制到单个离子,受泊松统计限制。利用该方法,我们成功展示了单个SnV-中心的位点选择性创建与修饰。这项技术为单缺陷水平的材料调控开辟了途径,并为退火过程中的缺陷结构与动力学提供了新见解。尽管该方法是在SnV-中心上验证的,但这种通用方法可轻松推广到金刚石及其他宽禁带材料中的其他注入型色心。

英文摘要:

Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realizing precise single-defect positioning and activation, which is crucial for scalable device fabrication. Here we address this problem by demonstrating a two-step fabrication method for tin vacancy (SnV-) centres that uses site-controlled ion implantation followed by local femtosecond laser annealing with in-situ spectral monitoring. The ion implantation is performed with sub-50 nm resolution and a dosage that is controlled from hundreds of ions down to single ions per site, limited by Poissonian statistics. Using this approach, we successfully demonstrate site-selective creation and modification of single SnV- centres. The technique opens a window onto materials tuning at the single defect level, and provides new insight into defect structures and dynamics during the annealing process. While demonstrated for SnV- centres, this versatile approach can be readily generalised to other implanted colour centres in diamond and wide-bandgap materials.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑