Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Cavity-enhanced measurements of defect spins in silicon carbide

The identification of new solid-state defect qubit candidates in widely used semiconductors has the potential to enable the use of nanofabricated devices for enhanced qubit measurement and control operations. In particular, the recent discovery of optically active spin states in silicon carbide thin films offers a scalable route for incorporating defect qubits into on-chip photonic devices. Here we demonstrate the use of 3C silicon carbide photonic crystal cavities for enhanced excitation of color center defect spin ensembles in order to increase measured photoluminescence signal count rates, …

硅碳中波导集成色心与宽带光子晶体反射器用于高效读出

Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout

本研究设计并制造了集成光子晶体反射器的波导结构，用于在低温下高效读取硅碳中的色心，实现了超过80%的反射率和单次光子读取高保真度。

Laser writing of scalable single colour centre in silicon carbide

Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems. However, to achieve scalable devices it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy ($V_{Si}$) centres in 4H-SiC using laser writing without any post-annealing process. Due to the aberration correction in the writing apparatus and the non-annealing process, we generate single $V_{Si}$ centres with yields up to 30%, located within about 80 nm of the desired position in the transverse plane. We a…

Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device

Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we de…

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting photons from the ultra-stable zero-phonon line optical transitions, we show a two-photon interference contr…

4H碳化硅肖特基二极管中的单V2缺陷在低温下的研究

Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature

本文研究了4H-SiC肖特基二极管中单硅空位（V2）色心的低温行为，探索了载流子耗尽、光学跃迁电学调谐、电荷-光子动力学及自旋相干性质，首次实现了肖特基器件与光学微结构的低温集成，为固态可扩展光学自旋缺陷中心奠定基础。