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arXiv 2409.04567cond-mat.mtrl-scicond-mat.mes-hall
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反铁磁 MnTe 薄膜中反常霍尔效应的意外调控

Unexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films

Sara Bey, Shelby S. Fields, Nicholas G. Combs, Bence G. Márkus, Dávid Beke, Jiashu Wang, Anton V. Ievlev, Maksym Zhukovskyi, Tatyana Orlova, László Forró, Steve… 展开作者

Sara Bey, Shelby S. Fields, Nicholas G. Combs, Bence G. Márkus, Dávid Beke, Jiashu Wang, Anton V. Ievlev, Maksym Zhukovskyi, Tatyana Orlova, László Forró, Steven P. Bennett, Xinyu Liu, Badih A. Assaf

AI总结:

研究发现生长在 GaAs(111) 上的反铁磁 α-MnTe 薄膜可通过面内磁场冷却实现 AHE 的按需调控,而 SrF2 衬底样品无此效应,为反铁磁自旋电子器件提供了新思路。

摘要:

发现对反铁磁体磁态敏感的反常霍尔效应(AHE),若能找到具有可调控且强 AHE 的材料,将开启自旋电子学的新时代。反铁磁体是一类新型材料,在特定条件下可表现出强 AHE,而无需净磁化。然而,目前仍缺乏控制其 AHE 的能力。本研究表明,生长在 GaAs(111) 衬底上的反铁磁 α-MnTe 中的 AHE 可通过在面内磁场下冷却材料而实现“按需写入”。磁场控制 AHE 的强度和矫顽力。值得注意的是,这种控制是生长在 GaAs 上的 α-MnTe 所独有的,在生长于 SrF2 上的 α-MnTe 中并不存在。我们揭示的可调控性挑战了目前对该材料中对称性允许的 AHE 的理解,并为设计反铁磁自旋电子器件开辟了新的可能性。

英文摘要:

The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of materials that can under certain conditions manifest a strong AHE, without having a net magnetization. But the ability to control their AHE is still lacking. In this study, we demonstrate that the AHE in altermagnetic α-MnTe grown on GaAs(111) substrates can be "written on-demand" by cooling the material under an in-plane magnetic field. The magnetic field controls the strength and the coercivity of the AHE. Remarkably, this control is unique to α-MnTe grown on GaAs and is absent in α-MnTe grown on SrF2. The tunability that we reveal challenges our current understanding of the symmetry-allowed AHE in this material and opens new possibilities for the design of altermagnetic spintronic devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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