AI 中文总结
研究交变磁场自旋电子学中关键材料MnTe，通过分子束外延生长法，研究直接沉积在GaAs(111)B上的近相纯纤锌矿MnTe，发现生长条件微小变化可改变其相组成，从多相变为单相极性纤锌矿层。
AI 中文摘要
交变磁场自旋电子学需要能在实验可及的薄膜中结合补偿磁序、对称控制电子响应和外延可调性的材料。MnTe是此类关键材料，但实验研究主要集中在稳定的NiAs型多晶型上，极性纤锌矿相大多未被探索。本文展示了分子束外延生长，并研究了直接沉积在GaAs(111)B上的近相纯纤锌矿MnTe的性质，表明生长条件的微小变化会强烈改变相组成，从纤锌矿MnTe基质中嵌入内延NiAs型夹杂物的多相状态变为几乎单相的极性纤锌矿层。
英文摘要
Altermagnetic spintronics requires materials in which compensated magnetic order, symmetry-controlled electronic responses, and epitaxial tunability can be combined in experimentally accessible thin films. MnTe is a key material in this context, but experimental studies have focused mainly on the stable NiAs-type polymorph, whereas the polar wurtzite phase remains largely unexplored. Here we demonstrate molecular-beam epitaxy growth and investigate properties of nearly phase-pure wurtzite MnTe deposited directly on GaAs(111)B, and show that small changes in the growth conditions strongly modify the phase composition, from a multiphase state with endotaxial NiAs-type inclusions embedded in wurtzite MnTe matrix to an almost single-phase polar wurtzite layer.
Commentsmain text pages 1-20, 6 figures; supplement pages 21-29, 5 figures
