arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2408.11299cond-mat.mtrl-sciphysics.app-ph
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衬底诱导的自旋矩铁磁共振测量中的类自旋矩信号

Substrate-induced spin-torque-like signal in spin-torque ferromagnetic resonance measurement

Dingsong Jiang, Hetian Chen, Guiping Ji, Yahong Chai, Chenye Zhang, Yuhan Liang, Jingchun Liu, Witold Skowroński, Pu Yu, Di Yi, Tianxiang Nan

AI总结:

研究发现高介电常数氧化物衬底在ST-FMR测量中产生类自旋矩伪信号,源于衬底容抗与漏射频电流,修正模型揭示其90度相位差机制,需警惕其掩盖真实自旋轨道矩信号。

摘要:

具有强自旋轨道耦合的氧化物薄膜和界面近来显示出极高的电荷-自旋转换效率,使其成为自旋电子学中潜在的自旋源材料。利用具有不同晶格常数和对称性的氧化物衬底进行外延应变工程,已成为进一步增强电荷-自旋转换的一种手段。然而,常用氧化物衬底(如SrTiO3)的高相对介电常数和介电损耗,在高温下会引起衬底中的显著电流分流,这可能强烈影响自旋矩测量,并可能导致对电荷-自旋转换效率的不准确估计。在本研究中,我们系统评估了各种氧化物衬底对广泛使用的自旋矩铁磁共振(ST-FMR)测量的影响。令人惊讶的是,我们在仅包含铁磁金属且位于高相对介电常数氧化物衬底(如SrTiO3和KTaO3)上的样品中观察到了显著的自旋矩信号,而最初预期应可忽略不计。值得注意的是,这一意外信号与氧化物衬底的容抗及衬底内的漏射频(RF)电流密切相关。通过修正传统的ST-FMR分析模型,我们将此现象归因于金属层与衬底中流动的RF电流之间存在90度相位差。我们建议在ST-FMR测量期间应格外注意,因为这一伪信号可能主导来自生长在高相对介电常数衬底上的高电阻率自旋源材料的真实自旋轨道矩信号。

英文摘要:

Oxide thin films and interfaces with strong spin-orbit coupling have recently shown exceptionally high charge-to-spin conversion, making them potential spin-source materials for spintronics. Epitaxial strain engineering using oxide substrates with different lattice constants and symmetries has emerged as a mean to further enhance charge-to-spin conversion. However, high relative permittivity and dielectric loss of commonly used oxide substrates, such as SrTiO3, can cause significant current shunting in substrates at high frequency, which may strongly affect spin-torque measurement and potentially result in an inaccurate estimation of charge-to-spin conversion efficiency. In this study, we systematically evaluate the influence of various oxide substrates for the widely-used spin-torque ferromagnetic resonance (ST-FMR) measurement. Surprisingly, we observed substantial spin-torque signals in samples comprising only ferromagnetic metal on oxide substrates with high relative permittivity (e.g., SrTiO3 and KTaO3), where negligible signal should be initially expected. Notably, this unexpected signal shows a strong correlation with the capacitive reactance of oxide substrates and the leakage radio frequency (RF) current within the substrate. By revising the conventional ST-FMR analysis model, we attribute this phenomenon to a 90-degree phase difference between the RF current flowing in the metal layer and in the substrate. We suggest that extra attention should be paid during the ST-FMR measurements, as this artifact could dominate over the real spin-orbit torque signal from high-resistivity spin-source materials grown on substrate with high relative permittivity.

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