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arXiv 2407.07545physics.optics
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基于一维光子晶体中扩展拓扑界面态的窄线宽激光器

Narrow Linewidth Laser Based on Extended Topological Interface States in One-Dimensional Photonic Crystals

Xiao Sun, Zhibo Li, Yiming Sun, Yupei Wang, Jue Wang, Huihua Cheng, Cong Fu, John H. Marsh, Anthony E. Kelly, Lianping Hou

AI总结:

本研究提出一维TIS扩展光子晶体结构,通过集成零折射率光子晶体与四相移取样光栅扩展拓扑界面态,缓解空间烧孔效应,实现了宽电流范围稳定单模、50 dB边模抑制比、约150 kHz洛伦兹线宽的窄线宽半导体激光器,且制备容差高。

摘要:

拓扑一维光子晶体概念的最新进展,通过在腔中心引入拓扑界面态(TIS),推动了高鲁棒性发光器件的发展。本研究从理论和实验上演示了一种一维TIS扩展光子晶体(1D-TISE-PC)结构。通过将具有线性色散的零折射率一维光子晶体结构与四相移(4PS)取样光栅集成,光子沿腔传播时无相位差,增强了对材料变化的鲁棒性并扩展了TIS。研究结果表明,扩展TIS可使光子沿激光腔的分布更均匀,缓解空间烧孔(SHB)效应。我们制备并表征了1550 nm侧壁型1D-TISE-PC半导体激光器,在60至420 mA的宽电流范围内实现了稳定单模运行,边模抑制比为50 dB。该1D-TISE-PC结构展现出线宽压窄效应,洛伦兹线宽约为150 kHz。将重构等效啁啾技术用于4PS取样光栅,可实现1D-TISE-PC激光器阵列的精确波长控制,波长间隔为0.796 nm ± 0.003 nm。研究表明,TIS仍存在于TISE腔中,且拓扑保护得以保留。其模式扩展特性缓解了SHB效应,从而压窄了线宽。我们认为,该结构设计简单且制备容差更高,适用于高功率窄线宽半导体激光器的开发。

英文摘要:

Recent advances in topological one-dimensional photonic crystal concepts have enabled the development of robust light-emitting devices by incorporating a topological interface state (TIS) at the cavity center. In this study, we theoretically and experimentally demonstrate a one-dimensional TIS-extended photonic crystal (1D-TISE-PC) structure. By integrating a linearly dispersive zero-index one-dimensional photonic crystal structure with a four-phase shift sampled grating, photons propagate along the cavity without phase differences, enhancing the robustness to material variations and extending the TIS. Our findings indicate that extending the TIS promotes a more uniform photon distribution along the laser cavity and mitigates the spatial hole burning (SHB) effect. We fabricated and characterized a 1550 nm sidewall 1D-TISE-PC semiconductor laser, achieving stable single-mode operation across a wide current range from 60 to 420 mA, with a side-mode suppression ratio of 50 dB. The 1D-TISE-PC structure exhibited a linewidth narrowing effect to approximately 150 kHz Lorentzian linewidth. Utilizing reconstruction equivalent-chirp technology for the 4PS sampled grating enabled precise wavelength control in 1D-TISE-PC laser arrays, achieving a wavelength spacing of 0.796 nm +- 0.003 nm. We show that the TIS still exists in the TISE cavity and topological protection is preserved. Its mode extension characteristics mitigate the SHB so narrows the linewidth. We argue that the design simplicity and improvement of the fabrication tolerance make this architecture suitable for high-power and narrow-linewidth semiconductor lasers development.

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