我们评估了豪威科技OV5647 CMOS图像传感器（500万像素）对Sr90和Cs137放射源辐射的探测性能。实验装置采用Raspberry Pi 3微型计算机进行数据采集，使用Python和OpenCV库开展图像处理工作。我们明确了将标准相机改造为对电子和光子敏感的粒子探测器所需的必要设置，其中包含一套两步式背景过滤流程。此外，我们首次实现了详细的Geant4模拟，该模拟描述了商用CMOS传感器的分层几何结构、材料组成以及所用放射源的相关特性。为提升模拟效果，我们加入了一种电荷扩散算法，可将电子和光子沉积的能量转换为ADC计数。我们以团簇尺寸、每个团簇的最大ADC信号以及团簇数量随距离的变化为指标呈现测量结果。研究发现，所有这些可观测量的实验数据与模拟结果均吻合良好，且我们能够复现团簇尺寸与每个团簇最大ADC信号之间的相关性。因此，这套经实验数据交叉验证的模拟可用于测试更多粒子探测构想的可行性，无需搭建实验装置。不过，该传感器的初级能量分辨率有限，因此无法区分不同的放射源。尽管如此，鉴于其能量沉积测量的准确性，该传感器经校准后适用于放射源活度的剂量测量。
英文摘要：
We evaluate the performance of an Omnivision OV5647 CMOS image sensor (5 Mp) for detecting radiation from Sr90 and Cs137 sources. Our experimental setup uses a Raspberry Pi 3 mini-computer for data acquisition, with image processing using Python and OpenCV libraries. We specify the necessary settings to convert a standard camera into a particle detector sensitive to electrons and photons, including a two-step background filtering procedure. In addition, we implement the first detailed Geant4 simulation that describes the layered geometry and material composition of a commercial CMOS sensor along with the radioactive sources. To enhance the simulation, we include an algorithm for charge diffusion and conversion of the energy deposited by electrons and photons into ADC counts. Our measurements are presented in terms of cluster size, the maximum ADC signal per cluster, and the number of clusters as a function of distance. We find a good agreement between the experimental data and simulation for all these observables, and we can reproduce the correlation between cluster size and maximum ADC signal per cluster. Thus, this simulation, cross-checked with data, can be used to test the feasibility of further particle detection ideas without the need to implement an experimental setup. However, the sensor has limited primary energy resolution and is thus unable to distinguish between different radioactive sources. Nevertheless, given the accurate measurement of energy deposition, the sensor, once calibrated, is suitable for dosimetric measurements of source activities.
Test-beam and simulation studies for the CLICTD technology demonstrator -- a monolithic CMOS pixel sensor with a small collection diode
CLIC Tracker Detector（CLICTD）是一款单片像素传感器，像素为30 um x 37.5 um，并配有一个小型收集二极管。该传感器采用180 nm CMOS成像工艺制造，使用两种不同的像素风格：第一种是连续的n型注入，用于完全横向耗尽，第二种是n型注入中的分段，用于加速电荷收集。此外，CLICTD具有创新的子像素分割方案，允许减少数字足迹，同时保持一个小的子像素间距。在本文中，介绍了使用分段n注入的像素风味的测试束测量。的性能进行评估的时间和空间分辨率以及效率。此外，试验梁数据进行比较，使用3D TCAD和蒙特卡罗模拟工具相结合的模拟研究。
Characterization of Passive CMOS Strip Detectors After Proton Irradiation
TU Dortmund（多特蒙德工业大学）；Deutsches Elektronen Synchrotron DESY（德国电子同步加速器中心）；University of Bonn（波恩大学）；Albert-Ludwigs-Universität Freiburg（弗赖堡大学）；Fachhochschule Dortmund（多特蒙德应用技术大学）
Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement
