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arXiv 2312.14014cond-mat.mtrl-scicond-mat.dis-nn
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$β$- (Al$_x$Ga$_{1-x}$)$_2$O$_3$合金半导体的有效声子色散

Effective Phonon Dispersion of $β$- (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloy semiconductor

Ankit Sharma, Animesh Datta, Uttam Singisetti

AI总结:

本文通过声子展开和特殊准随机结构超胞,计算了$β$- (Al$_x$Ga$_{1-x}$)$_2$O$_3$合金在铝比例18.75%和37.5%下的有效声子色散,并研究无序对介电常数和红外光谱的影响,为输运性质计算提供基础。

摘要:

本文利用声子展开形式研究$β$- (Al$_x$Ga$_{1-x}$)$_2$O$_3$合金的有效声子色散。为了捕捉系统的真实随机性,采用特殊准随机结构技术设计了超胞。随后使用声子展开技术,针对铝相对于镓原子的比例为18.75%和37.5%的情况,获得了有效声子色散(EPD)。还研究了无序对高频和直流介电常数的影响。展开过程也应用于偶极矩,利用投影概率获得了无序系统的红外光谱。计算得到的性质为我们进一步计算这些合金半导体中的输运性质提供了深入见解,同时捕捉了系统的真实随机性。

英文摘要:

In this work, the Effective Phonon Dispersion of $β$- (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloy is investigated using the Phonon unfolding formalism. To capture the true randomness of the system, supercells are designed using the technique of special quasirandom structues. The phonon unfolding technique is then used to obtain the effective phonon dispersion (EPD) for aluminium fractions of 18.75 \% and 37.5 \% with respect to gallium atoms. The impact of disorder on the high frequency and DC dielectric constant is also investigated. The unfolding procedure was also applied to the dipole moment where the projection probability was used to obtain the IR spectra of the disordered system. The calculated properties gives us further insights to calculate the transport properties in these alloy semiconductors while capturing the true randomness of the system.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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