The evolution of the optical phonons in layered semiconductor alloys SnSe1-xSx is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and 441.6 nm). The polarization dependences of the phonon modes are compared with transmission electron diffraction measurements to determine the crystallographic orientation of the samples. Some of the Raman modes show significant variation in their polarization behavior depending on the excitation wavelengths. It is established that the maximum intensity direction of the Ag2 mode of SnSe1-xSx (0<=x<=1) does not depend on the excitation wavelength and corresponds to the armchair direction. It is additionally found that the lower-frequency Raman modes of Ag1, Ag2 and B3g1 in the alloys show the typical one-mode behavior of optical phonons, whereas the higher-frequency modes of B3g2, Ag3 and Ag4 show two-mode behavior.
Various types of magnetism can appear in emerging quantum materials such as van der Waals layered ones. Here, we report the successful doping of manganese atoms into a post-transition metal dichalcogenide semiconductor: SnSe$_2$. We synthesized a single crystal Sn$_{1-x}$Mn$_x$Se$_{2}$ with $\textit{x}$ = 0.04 by the chemical vapor transport (CVT) method and characterized it by x-ray diffraction (XRD) and energy-dispersive x-ray spectroscopy (EDS). The magnetic properties indicated a competition between coexisting ferromagnetic and antiferromagnetic interactions, from the temperature dependenc…
The search for topological systems has recently broadened to include random substitutional alloys, which lack the specific crystalline symmetries that protect topological phases, raising the question whether topological properties can be preserved, or are modified by disorder. To address this question, we avoid methods that assumed at the outset high (averaged) symmetry, using instead a fully-atomistic, topological description of alloy. Application to PbSe-SnSe alloy reveals that topology survives in an interesting fashion: (a) spatial randomness removes the valley degeneracy (splitting larger…
The group IV-VI compound SnSe, with an orthorhombic lattice structure, has recently attracted particular interest due to its unexpectedly low thermal conductivity and high power factor, showing great promise for thermoelectric applications. SnSe displays intriguing anisotropic properties due to the puckered low-symmetry in-plane lattice structure. Low-dimensional materials have potential advantages in improving the efficiency of thermoelectric conversion, due to the increased power factor and decreased thermal conductivity. A complete study of the optical and electrical anisotropies of SnSe na…
SnSe, a group IV-VI monochalcogenide with layered crystal structure similar to black phosphorus, has recently attracted extensive interests due to its excellent thermoelectric properties and potential device applications. Experimental electronic structure of both the valence and conduction bands is critical for understanding the effects of hole versus electron doping on the thermoelectric properties, and to further reveal possible change of the band gap upon doping. Here, we report the multivalley valence bands with a large effective mass on semiconducting SnSe crystals and reveal single-valle…
Layered tin selenide (SnSe) has recently emerged as a high-performance thermoelectric material with the current record for the figure of merit (ZT) observed in the high-temperature Cmcm phase. So far, access of the Cmcm phase has been mainly obtained via thermal equilibrium methods based on sample heating or application of external pressure, thus restricting the current understanding only to ground-state conditions. Here, we investigate the ultrafast carrier and phononic dynamics in SnSe. Our results demonstrate that optical excitations can transiently switch the point-group symmetry of the cr…
Since 2014 the layered semiconductor SnSe in the high-temperature Cmcm phase is known to be the most efficient thermoelectric material. Making use of first-principles calculations we show that its vibrational and thermal transport properties are determined by huge non-perturbative anharmonic effects. We show that the transition from the Cmcm phase to the low-symmetry Pnma is a second-order phase transition driven by the collapse of a zone border phonon, whose frequency vanishes at the transition temperature. Our calculations show that the spectral function of the in-plane vibrational modes are…
Stable structures of layered SnS and SnSe and their associated electronic and vibrational spectra are predicted using first-principles DFT calculations. The calculations show that both materials undergo a phase transformation upon thinning whereby the in-plane lattice parameters converge to a pseudo-cubic phase, similar to the high-temperature behaviour observed for their bulk counterparts. The electronic properties of layered SnS and SnSe evolve to an almost symmetric dispersion whilst the gap changes from indirect to direct. Characteristic signatures in the phonon dispersion curves and surfa…
SnSe is a layered material that currently holds the record for bulk thermoelectric efficiency. The primary determinant of this high efficiency is thought to be the anomalously low thermal conductivity resulting from strong anharmonic coupling within the phonon system. Here we show that the nature of the carrier system in SnSe is also determined by strong coupling to phonons by directly visualizing polaron formation in the material. We employ ultrafast electron diffraction and diffuse scattering to track the response of phonons in both momentum and time to the photodoping of free carriers acros…
The layered semiconductor SnSe is one of the highest-performing thermoelectric materials known. We demonstrate, through a first-principles lattice-dynamics study, that the high-temperature Cmcm phase is a dynamic average over lower-symmetry minima separated by very small energetic barriers. Compared to the low-temperature Pnma phase, the Cmcm phase displays a phonon softening and enhanced three-phonon scattering, leading to an anharmonic damping of the low-frequency modes and hence the thermal transport. We develop a renormalisation scheme to quantify the effect of the soft modes on the calcul…
We conduct comprehensive investigations of both thermal and electrical transport properties of SnSe and SnS using first-principles calculations combined with the Boltzmann transport theory. Due to the distinct layered lattice structure, SnSe and SnS exhibit similarly anisotropic thermal and electrical behaviors. The cross-plane lattice thermal conductivity $κ_{L}$ is 40-60% lower than the in-plane values. Extremely low $κ_{L}$ is found for both materials because of high anharmonicity. It is suggested that nanostructuring would be difficult to further decrease $κ_{L}$ because of the short mean …
Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valley valence band structure and a quasi two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstra…
Transition metal dichalcogenide (TMD) alloys have attracted great interests in recent years due to their tunable electronic properties, especially the semiconductor-metal phase transition, along with their potential applications in solid-state memories and thermoelectrics. However, the thermal conductivity of layered two-dimensional (2D) TMD alloys remains largely unexplored despite that it plays a critical role in the reliability and functionality of TMD-enabled devices. In this work, we study the temperature-dependent anisotropic thermal conductivity of the phase-transition 2D TMD alloys WSe…
The temperature dependent crystal structure analysis in martensitic phase of Ni_2Mn_(1+x)Sn_(1-x) (x = 0.40 and 0.44) magnetic shape memory alloy is performed using X-ray diffraction. The martensitic phase consists of 4-Layered and 14-Layered orthorhombic structure. The phase fraction of 4-layered and 14-layered orthorhombic structure change with temperature. Interestingly, the magnetic property also changes with temperature and corresponds to structural change temperature. Thus, the exchange coupling constant between original Mn and substituted Mn is calculated, which shows that the 4-layered…
Magnetoelectric (ME) interactions in layered structures of magnetostrictive and piezoelectric phases are mediated by mechanical deformation. Here we discuss the frequency dependence of ME coupling in bilayers and trilayers of Permendur, a ferromagnetic alloy, and lead zirconate titanate. Data on ME voltage coefficient versus frequency profiles reveal a giant ME coupling at electromechanical resonance. The maximum voltage coefficient of 90 V/cm Oe is three orders of magnitude higher than low-frequency values. The ME interactions for transverse fields is an order of magnitude stronger than for l…
The Al-Ag system is thought to be a well-understood model system used to study diffusional phase transformations in alloys. Here we report the existence of a new precipitate phase, zeta, in this classical system using scanning transmission electron microscopy (STEM). The zeta phase has a modulated structure composed of alternating bilayers enriched in Al or Ag. Our in situ annealing experiments reveal that the zeta phase is an intermediate precipitate phase between GP zones epsilon and gamma prime. First-principles calculations show that z is a local energy minimum state formed during Ag clust…
Mechanical strain mediated magnetoelectric effects are studied in bilayers and trilayers of piezoelectric quartz and magnetostrictive permendur (P), an alloy of Fe-Co-V. It is shown that the magneto-electric voltage coefficient (MEVC), proportional to the ratio of the piezoelectric coupling coefficient to the permittivity, is higher in quart-based composites than for traditional ferroelectrics based ME composites. In bilayers of X-cut single crystal quartz and permendur, the MEVC varies from 1.5 V/cm Oe at 20 Hz to ~ 185 V/cm Oe at bending resonance or electromechanical resonance corresponding…
Mn$_2$VAl Heusler alloy films were epitaxially grown on MgO(100) single crystal substrates by means of ultra-high-vacuum magnetron sputtering. A2 and L2$_1$ type Mn$_2$VAl order was controlled by the deposition temperatures. A2-type Mn$_2$VAl films showed no spontaneous magnetization and L2$_1$-type Mn$_2$VAl films showed ferrimagnetic behavior with a maximum saturation magnetization of 220 emu/cm$^3$ at room temperature. An antiferromagnetic reflection was observed with neutron diffraction at room temperature for an A2-type Mn$_2$VAl film deposited at 400$^\circ$C. A bilayer sample of the ant…
The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over the past few years, a number of new nitride materials have emerged with exciting photonic, electronic, and magnetic properties. Some examples are 2D and layered hBN and the III-V diamond analog cBN, the transition metal nitrides ScN, YN, and their alloys (e.g. ferroelectric ScAlN), piezomagnetic GaMnN, ferrimagnetic Mn4N, and epitaxial superconductor/semicon…
Broadband phonon-velocity suppression and a finite anisotropic crossover in twisted bilayer SnSe
Beihang University（北京航空航天大学）；Tianmushan Laboratory, Beihang University（天目山实验室）；Center for Bioinspired Science and Technology, Hangzhou International Innovation Institute, Beihang University（杭州国际创新学院仿生科学与技术中心）
New classes two-dimensional (2D) materials beyond graphene, including layered and non-layered, and their heterostructures, are currently attracting increasing interest due to their promising applications in nanoelectronics, optoelectronics and clean energy, where thermal transport property is one of the fundamental physical parameters. In this paper, we systematically investigated the phonon transport properties of 2D orthorhombic group IV-VI compounds of $GeS$, $GeSe$, $SnS$ and $SnSe$ by solving the Boltzmann transport equation (BTE) based on first-principles calculations. Despite the simila…
Layered chalcogenides including Bi2Te3, Sb2Te3, Bi-Sb-Te ternary alloys and heterostructures are known as great thermoelectric, topological insulators and recently highlighted as plasmonic building blocks beyond noble metals. Here, we conduct a joint in situ transmission electron microscopy (in situ TEM) and density functional theory (DFT) calculations to investigate the temperature dependent nanoscale dynamics, interfacial properties and further identifying the role of native defects and edge configurations in anisotropic sublimations of Bi2Te3-Sb2Te3 in-plane heterostructure and Sb2-xBixTe3 …
Aluminum nitride is piezoelectric and exhibits spontaneous polarization along the $c$-axis, but the polarization cannot be switched by applying an electric field. Adding Sc to AlN enhances the piezoelectric properties, and can make the alloy ferroelectric. We perform a detailed first-principles analysis of spontaneous and piezoelectric polarization. Comparisons between explicit supercell calculations show that the virtual crystal approximation produces accurate results for polarization, but falls short in describing the phase stability of the alloy. We relate the behavior of the piezoelectric …
Any of two or more two-dimensional (2D) materials with similar properties can be alloyed into a new layered material, namely, 2D alloy. Individual monolayer in 2D alloys are kept together by Van der Waals interactions. The property of multilayer alloys is a function of their layer number. Here, we studied the shear (C) and layer-breathing (LB) modes of Mo$_{0.5}$W$_{0.5}$S$_2$ alloy flakes and their link to the layer number of alloy flakes. The study reveals that the disorder effect is absent in the C and LB modes of 2D alloys, and the monatomic chain model can be used to estimate the frequenc…
The Hidden Cost of Alloying: Disorder-Driven Transport Collapse in TMDs
Dipartimento di Fisica Università della Calabria e INFN-gruppo collegato di Cosenza（卡拉布里亚大学物理系及科森扎INFN联合小组）；Instituto Madrileño de Estudios Avanzados, IMDEA Nanociencia（马德里高级研究院，IMDEA纳米科学研究所）；Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid（马德里自治大学凝聚态物理系）；Instituto de Física de la Materia Condensada IFIMAC, Univ. Autónoma de Madrid（马德里自治大学凝聚态物理研究所IFIMAC）；Walter Schottky Institute, Technical University of Munich（慕尼黑工业大学瓦尔特·肖特基研究所）；Catalan Institute of Nanoscience and Nanotechnology (ICN2),CSIC and BIST（加泰罗尼亚纳米科学与纳米技术研究所（ICN2），西班牙国家研究委员会和巴塞罗那理工大学）
Nanobelts, nanoribbons and other quasi-one-dimensional nanostructures formed from layered, so-called, van der Waals semiconductors have garnered much attention due to their high-performance, tunable optoelectronic properties. For layered alloys made from the gallium monochalcogenides GaS, GaSe, and GaTe, near-continuous tuning of the energy bandgap across the full composition range has been achieved in GaSe1-xSx and GaSe1-xTex alloys. Gold-catalyzed vapor-liquid-solid (VLS) growth of these alloys yields predominantly nanobelts, nanoribbons and other nanostructures for which the fast crystal gr…
Density functional theory calculations have been used to identify stable layered Li-$M$-B crystal structure phases derived from a recently proposed binary metal-sandwich (MS) lithium monoboride superconductor. We show that the MS lithium monoboride gains in stability when alloyed with electron-rich metal diborides; the resulting ordered Li$_{2(1-x)}M_x$B$_2$ ternary phases may form under normal synthesis conditions in a wide concentration range of $x$ for a number of group-III-V metals $M$. In an effort to pre-select compounds with the strongest electron-phonon coupling we examine the softenin…
We report the implementation of energy dispersive X-ray spectroscopy for layered semiconductors in the form of atomically thin transition metal dichalcogenides. The technique is based on a scanning electron microscope equipped with a silicon drift detector for energy dispersive X-ray analysis. By optimizing operational parameters in numerical simulations and experiments, we achieve layer-resolving sensitivity for few-layer crystals down to the monolayer limit and demonstrate elemental composition profiling in vertical and lateral heterobilayers of transition metal dichalcogenides. The techniqu…
Composition-Driven Tunable Optical and Electrical Properties in Van der Waals Ferroelectric NbOI2-xClx Alloys
Dalian University of Technology（大连理工大学）；Dalian University of Technology and Belarusian State University Joint Institute, Dalian University of Technology（大连理工大学与白俄罗斯国立大学联合研究院）；Belarusian State University（白俄罗斯国立大学）；Belarusian National Technical University（白俄罗斯国立技术大学）
