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arXiv 2309.04480cond-mat.mtrl-sciphysics.app-ph
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电化学氧化物膜生长的建模——对 PDM 的改进

Modeling of electrochemical oxide film growth -- a PDM refinement

Ingmar Bösing, Fabio La Mantia, Jorg Thöming

AI总结:

本文提出改进的点缺陷模型(R-PDM),通过引入基于缺陷有限尺寸的边界条件和电荷分布方程,克服了原模型中恒定且与电势无关电场强度的未证实假设,为更真实地描述钝化层形成提供了依据。

摘要:

点缺陷模型(PDM)已有40多年的历史,为理解钝化带来了更深刻的见解。在过去的几十年中,它经历了多次修改和改进,并被广泛用于分析不同合金的生长动力学。然而,该模型基于仍未经证实的假设,如恒定且与电势无关的电场强度。为了克服这一局限性,我们引入了改进的 PDM(R-PDM),在其中我们用包含电荷分布的附加方程来替代这些假设,这些方程包括基于考虑缺陷的有限尺寸而引入的两个缺陷层的新物理有效边界条件,并通过计算紧凑双层上薄膜表面朝向溶液的电势降。R-PDM 的计算表明,原始 PDM 假设仅对氧化物膜生长和空位传输的非常特定的参数组合有效,不能普遍认为是理所当然的。我们相信我们关于电场和电势降对外部电势依赖性的发现,为更现实地描述钝化层形成铺平了道路。

英文摘要:

The Point Defect Model (PDM) is known for over 40 years and has brought deeper insight to the understanding of passivity. During the last decades it has seen several changes and refinements, and it has been widely used to analyze growth kinetics of different alloys. Nevertheless, the model has been based on still unconfirmed assumptions, as constant and potential independent electric field strength. To overcome this limitation, we introduce a Refined PDM (R-PDM) in which we replace those assumptions by using additional equations for charge distribution including new physically valid boundary conditions based on considering finite dimensions for the defects by introduction of two defect layer at the film boundaries and by calculating the potential drop at the surface of the film towards the solution over the compact double layer. The calculations by the R-PDM show that the original PDM assumptions are only valid for very specific parameter combinations of oxide film growth and vacancies transport and cannot generally be taken for granted. We believe our findings of electric field and potential drop dependency on the external potential to pave the way for a more realistic description of passive layer formation.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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