电化学处理铜氧化物薄膜中掺杂结晶度的控制
Control of dopant crystallinity in electrochemically treated cuprate thin films
摘要：
我们提出了一种方法的基础上\textit{ex-situ}（后生长）电化学控制薄膜中的氧浓度的超导氧化物La $_2$ CuO $_{4+y}$外延生长在衬底上的同构LaSrAlO $_4$。取决于氧浓度的超导转变温度可以通过调节用于电化学反应的基础溶液的pH水平来调节。作为我们的主要发现，我们证明，掺杂剂氧可以占据间隙层在取向无序状态或组织成结晶相通过一种机制，其中掺杂剂氧被插入到衬底中，改变晶格对称性的衬底和外延膜。我们讨论了这种机制，并描述了由此产生的方法作为一个平台，在其他过渡金属氧化物的薄膜进行探索。
英文摘要：
We present a methodology based on \textit{ex-situ} (post-growth) electrochemistry to control the oxygen concentration in thin films of the superconducting oxide La$_2$CuO$_{4+y}$ grown epitaxially on substrates of isostructural LaSrAlO$_4$. The superconducting transition temperature, which depends on the oxygen concentration, can be tuned by adjusting the pH level of the base solution used for the electrochemical reaction. As our main finding, we demonstrate that the dopant oxygens can either occupy the interstitial layer in an orientationally disordered state or organize into a crystalline phase via a mechanism in which dopant oxygens are inserted into the substrate, changing the lattice symmetry of both the substrate and the epitaxial film. We discuss this mechanism, and describe the resulting methodology as a platform to be explored in thin films of other transition metal oxides.
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