电化学顶栅石墨烯：拉曼散射监测掺杂剂
Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
摘要：
我们证明了电化学顶栅石墨烯通过使用固体聚合物电解质。这允许达到比标准背栅高得多的电子和空穴掺杂。原位拉曼测量监测掺杂。对于电子和空穴掺杂，G峰变硬并且变尖，而2D峰示出对空穴和电子的不同响应。它的位置增加空穴掺杂，而它软化的高电子掺杂。G峰位置的变化是$Γ$非绝热Kohn异常的特征。另一方面，对于可见光激发，2D峰位置的变化由电荷转移决定。G峰和2D峰的强度比显示出对掺杂的强烈依赖性，使其成为监测电荷的敏感参数。
英文摘要：
We demonstrate electrochemical top gating of graphene by using a solid polymer electrolyte. This allows to reach much higher electron and hole doping than standard back gating. In-situ Raman measurements monitor the doping. The G peak stiffens and sharpens for both electron and hole doping, while the 2D peak shows a different response to holes and electrons. Its position increases for hole doping, while it softens for high electron doping. The variation of G peak position is a signature of the non-adiabatic Kohn anomaly at $Γ$. On the other hand, for visible excitation, the variation of the 2D peak position is ruled by charge transfer. The intensity ratio of G and 2D peaks shows a strong dependence on doping, making it a sensitive parameter to monitor charges.
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