CVD金刚石生长早期纳米金刚石籽晶的尺寸依赖刻蚀效应
Size dependent etching of nanodiamond seeds in the early stages of CVD diamond growth
AI总结：
本研究通过实验结合基于Young-Laplace方程的尺寸效应模型，揭示了MWCVD条件下爆轰纳米金刚石籽晶的尺寸依赖刻蚀规律，可用于估算生长和刻蚀速率系数。
摘要：
我们开展了一项实验研究，探究在可制备超薄金刚石膜的典型微波化学气相沉积（MWCVD）条件下，爆轰纳米金刚石（DND）籽晶的刻蚀行为，该研究对诸多技术应用具有基础意义。通过扫描电子显微镜（SEM）表征了Si(100)衬底上籽晶表面密度随时间的演化规律。基于Young-Laplace方程描述的颗粒尺寸对DND中碳原子化学势及反应活化能的影响，我们在相应模型框架下解释了所得刻蚀动力学规律。研究发现，尺寸小于临界半径r*的籽晶会被刻蚀去除，而尺寸大于r*的籽晶能够生长。最后，该模型可根据实验动力学数据估算生长与刻蚀的速率系数。
英文摘要：
We present an experimental study on the etching of detonation nanodiamond (DND) seeds during typical microwave chemical vapor deposition (MWCVD) conditions leading to ultra-thin diamond film formation, which is fundamental for many technological applications. The temporal evolution of the surface density of seeds on Si(100) substrate has been assessed by scanning electron microscopy (SEM). The resulting kinetics have been explained in the framework of a model based on the effect of particle size, according to the Young-Laplace equation, on both chemical potential of carbon atoms in DND and activation energy of reaction. We found that seeds with size smaller than a critical radius, r*, are etched away while those greater than r* can grow. Finally, the model allows to estimate the rate coefficients for growth and etching from the experimental kinetics.
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