The integration of diamond with $β$-Ga$_2$O$_3$ presents a promising pathway to enhance thermal management in high-power electronic devices, where the inherently low thermal conductivity of $β$-Ga$_2$O$_3$ can lead to localized self-heating and elevated junction temperatures. In this work, we demonstrate a scalable, low-damage approach for integrating polycrystalline diamond films on (010) $β$-Ga$_2$O$_3$ substrates via microwave plasma chemical vapor deposition (MPCVD), employing dielectric interlayers and polymer-assisted electrostatic nanodiamond seeding to systematically evaluate the impact of growth conditions on film morphology, grain evolution, phase purity, and optical characteristics. At a growth temperature of 800$^\circ$C, progressive grain coarsening is observed with extended deposition, with the lateral grain size increasing from 37.6 nm (53 nm thickness) to 192.5 nm for an 886 nm-thick film. This microstructural evolution is accompanied by narrowing of the diamond Raman peak and a monotonic increase in the sp$^3$ phase fraction from 95.9\% to as high as 98.9\%, indicating continued suppression of non-diamond carbon with prolonged growth. Comparison of SiO$_2$ and SiN$_x$ interlayers under identical growth conditions shows only marginal differences in grain size and phase purity, indicating limited interlayer influence once a high nucleation density is established. Importantly, diamond films exhibiting greater than 96\% sp$^3$ phase content were achieved at substrate temperatures as low as 480$^\circ$C, highlighting the viability of diamond-on-Ga$_2$O$_3$ integration under reduced thermal budgets. These findings establish a robust and scalable platform for integrating diamond on $β$-Ga$_2$O$_3$, supporting the development of next-generation power and RF devices with improved thermal management.
Extending spin dephasing time of perfectly aligned Nitrogen-Vacancy centers by mitigating stress distribution on highly misoriented chemical-vapor-deposition diamond
Light extraction from CVD-grown <400> single crystal diamond nanopillars. Selective charge state manipulations with 0V SF6 plasma
我们研究了从单晶金刚石纳米柱中实现光提取的可能性。这是通过专用的519 nm激光诱导带负电荷的氮空位（NV-）的自旋态引发来实现的。对于第一次，我们提出的可能性，以执行有效的自旋读出NV（-）的自然产生的生长过程中的化学气相沉积（CVD）合成SCD内没有任何后生长注入策略。应用的金刚石既没有注入14 N+，也没有CVD合成的SCD退火，使得氮空位的存在是一个显着的现象。为了研究在室温和环境条件下利用NV（-）明亮的光致发光和波导效应实现光提取的可能性，我们通过电子束光刻（EBL）和干法电感耦合等离子体/反应离子刻蚀（ICP-RIE）进行了SCD的自顶向下纳米加工，以产生光聚焦纳米柱。此外，我们还通过专用的0 V ICP等离子体对金刚石表面进行了氟化处理。光提取和自旋操纵进行光致发光（PL）光谱和光学检测磁共振（ODMR）在室温下。我们已经观察到基于选择性0 V SF6等离子体蚀刻的显著效果，并且令人惊讶地，与文献发现相反，NV（-）中心的失活。我们详细讨论了可能的失活机制，关于二维空穴气（2 HG）和费米带弯曲。
Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams
Helmholtz-Zentrum Dresden-Rossendorf（德累斯顿罗森多夫亥姆霍兹中心）；Raith GmbH（Raith有限公司）；Leibniz-Institut für Kristallzüchtung (IKZ)（莱布尼茨晶体生长研究所）；Technical University of Dresden（德累斯顿工业大学）
Revealing and reducing growth-induced interfacial disorder in preferentially aligned nitrogen-vacancy centers in diamond
University of Stuttgart（斯图加特大学）；IQST, Center for Integrated Quantum Science and Technology（量子科学与技术集成中心）；Fraunhofer Institute for Applied Solid State Physics（弗劳恩霍夫应用固态物理研究所）；TTI GmbH /SQUTEC（TTI有限公司/SQUTEC）；Max Planck Institute for Solid State Research（马克斯·普朗克固体研究研究所）
