揭示并降低金刚石中择优取向氮空位（NV）中心由生长诱导的界面无序
Revealing and reducing growth-induced interfacial disorder in preferentially aligned nitrogen-vacancy centers in diamond
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中文总结 AI 辅助
本研究针对金刚石择优取向NV中心的生长诱导界面无序，对比两种氮注入工艺，发现平稳氮输送可抑制无序，近理论极限的相干性，还实现了质子NMR检测，为量子传感用高质量NV层制备提供了方法。
中文摘要 AI 辅助
化学气相沉积（CVD）金刚石中的氮空位（NV）中心可形成择优取向的系综，具有高传感性能和低晶格缺陷密度，该材料薄膜是多种成像模态的核心。然而，制备此类薄膜所需的氮注入会暂时使生长偏离平衡，产生界面应变和自旋缺陷，降低NV相干性。本研究采用两种氮注入工艺，结合纳米级选择性等离子体刻蚀和NV自旋相干测量，探究在（111）金刚石上生长的富12C择优取向NV层中的该类无序。脉冲氮注入会在60-80 nm的界面区域产生明显的氮过冲，生成过量缺陷；相比之下，通过质量流量控制器实现的平稳氮输送可大幅抑制界面无序，使相干性能接近自旋浴噪声所限定的理论极限。研究采用50 nm厚的NV层演示了质子核磁共振检测。本研究揭示了与氮掺杂工艺相关的界面无序的作用，为生长用于量子传感应用的高质量薄NV掺杂层提供了途径。
英文摘要
Nitrogen-vacancy (NV) centers in chemical-vapor-deposition (CVD) diamond can form preferentially oriented ensembles with high sensing performance and low densities of lattice defects. Thin films of this material are a cornerstone of various imaging modalities. However, nitrogen injection needed to produce such films can transiently drive growth out of equilibrium, generating interfacial strain and spin defects that degrade NV coherence. Here, we investigate this disorder in $^{12}\text{C}$-enriched, preferentially oriented NV layers grown on (111) diamond using two nitrogen-injection procedures, combined with nanometer-scale selective plasma etching and NV spin-coherence measurements. Pulsed nitrogen injection produces a pronounced nitrogen overshoot within a 60--80 nm interfacial region, generating excessive amounts of defects. By contrast, smooth nitrogen delivery through mass flow controllers substantially suppresses interfacial disorder, yielding coherence properties close to the theoretical limit imposed by spin-bath noise. A 50-nm NV layer is used to demonstrate proton nuclear magnetic resonance detection. This work reveals the role of interfacial disorder associated with the nitrogen-doping procedure and provides a route to growing high-quality, thin NV-doped layers for quantum-sensing applications.
