异质外延金刚石薄膜中具有择优取向的氮-空位中心自组织层状结构
Self-organized Layered Structures of Nitrogen-Vacancy Centers with Preferential Orientation in Heteroepitaxial Diamond Films
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中文总结 AI 辅助
该研究通过CVD与氧等离子体蚀刻循环，在异质外延金刚石薄膜中自组织形成择优取向的NV$^{-}$层状结构，实现增强发射与自旋阵列，用于量子器件。
中文摘要 AI 辅助
本文报道了在两英寸晶圆尺度上制备和表征含有三维层状结构的带负电氮-空位色心（NV$^{-}$）的单晶金刚石薄膜。(100)取向的层状金刚石薄膜通过化学气相沉积（CVD）生长，以创建与NV$^{-}$中心相关的增强发射的空间分离区域。这种局部发射增强以及二维和三维自旋阵列可为新兴量子器件（如数据处理器、存储单元和磁传感器）实现紧密堆积的架构。采用CVD生长和氧等离子体蚀刻的循环序列，原位形成具有平坦{111}侧壁的层状倒金字塔结构。这些凹坑随后通过氮掺杂金刚石过生长，以获得具有均匀N-V键排列和提高氮掺入效率的富含NV$^{-}$的小面。
英文摘要
Here, we report the fabrication and characterization of single crystal diamond films on a two-inch wafer-scale containing three-dimensional layered structures of negatively charged nitrogen-vacancy color centers (NV$^{-}$). The (100)-oriented layered diamond films were grown by chemical vapor deposition (CVD) to create spatially separated regions of enhanced emission associated with NV$^{-}$ centers. Such localized emission enhancement as well as 2D and 3D arrays of spins could enable close-packed architectures for emerging quantum devices, such as data processors, memory cells, and magnetic sensors. A cyclic sequence of CVD growth and oxygen-plasma etching is employed, resulting in the in-situ formation of layered inverted pyramidal structures with flat $\{$111$\}$ sidewalls. These pits are subsequently overgrown by nitrogen-doped diamond to achieve NV$^{-}$-rich facets with a uniform N-V bond arrangement and improved nitrogen incorporation efficiency.
发表机构
- Fraunhofer Institut für Angewandte Festkörperphysik IAF（弗劳恩霍夫应用固体物理研究所）
- Departamento de Física—CIOyN, Universidad de Murcia（穆尔西亚大学物理系）
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