arXiv 2302.109852023-02-21cond-mat.mtrl-sci

无孪晶Bi2Se3和Sb2Te3在In2Se3/InP（111）B虚拟衬底上的分子束外延

Molecular Beam Epitaxy of Twin-Free Bi2Se3 and Sb2Te3 on In2Se3/InP(111)B Virtual Substrates

Kaushini S. Wickramasinghe, Candice Forrester, Maria C. Tamargo

备注：: Main manuscript has 27 pages and 7 figures. Supplementary information has 3 pages and 3 figures

摘要：

三维拓扑绝缘体（3D-TI）是具有绝缘体和奇异金属表面态的新一代材料，具有广泛的突破性应用。然而，表面沟道的利用常常受到晶体缺陷（例如反位、空位和孪晶畴）的存在的阻碍。对于太赫兹器件的应用，孪生被证明是非常有害的。先前使用技术上重要的InP（111）衬底来减少孪晶的尝试是有希望的，但未能在保持高结构质量的同时完全抑制孪晶畴。在这里，我们报告的无孪晶分子束外延Bi 2Se 3和Sb 2 Te 3结构的生长超薄In 2Se 3层形成的一种新的硒钝化技术在氧化物脱附的光滑，非邻位的InP（111）B衬底，而不使用铟源。非孪晶In 2Se 3的形成提供了有利的模板以完全抑制3D-TI中的孪晶畴，大大拓宽了太赫兹制度中的新型器件应用。

英文摘要：

Three-dimensional topological insulators (3D-TIs) are a new generation of materials with insulating bulk and exotic metallic surface states that facilitate a wide variety of ground-breaking applications. However, utilization of the surface channels is often hampered by the presence of crystal defects, such as antisites, vacancies and twin domains. For terahertz device applications, twinning is shown to be highly deleterious. Previous attempts to reduce twins using technologically important InP(111) substrates have been promising, but have failed to completely suppress twin domains while preserving high structural quality. Here we report growth of twin-free molecular beam epitaxial Bi2Se3 and Sb2Te3 structures on ultra-thin In2Se3 layers formed by a novel selenium passivation technique during the oxide desorption of smooth, non-vicinal InP(111)B substrates, without the use of an indium source. The formation of un-twinned In2Se3 provides a favorable template to fully suppress twin domains in 3D-TIs, greatly broadening novel device applications in the terahertz regime.

机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。

摘要：

英文摘要：

相关论文