纤锌矿InP微盘：从外延到室温激光
Wurtzite InP Microdisks: from Epitaxy to Room-Temperature Lasing
摘要：
半导体的亚稳纤锌矿晶体相由于其扩展的可调谐直接带隙范围而包含用于高性能电光器件的巨大潜力。然而，以良好的质量合成这些材料并超越纳米线尺寸限制仍然是难以捉摸的。在这项工作中，纤锌矿InP微盘和相关的几何结构的绝缘体上的光学应用的外延进行了探索。这是通过鳍片的选择性区域生长和拉链诱导的外延横向过生长的精心组合来实现的，这使得能够在精确位置处共集成双折射形状的晶体。用STEM和$μ$ -PL表征了生长的材料具有高的相纯度和优良的光学质量。在室温下的光泵浦激光在微盘中实现，激光阈值为365 $μJ/cm^2$，从而展示了广泛的光子应用的前景。
英文摘要：
Metastable wurtzite crystal phases of semiconductors comprise enormous potential for high-performance electro-optical devices, owed to their extended tunable direct band gap range. However, synthesizing these materials in good quality and beyond nanowire size constraints has remained elusive. In this work, the epitaxy of wurtzite InP microdisks and related geometries on insulator for optical applications is explored. This is achieved by an elaborate combination of selective area growth of fins and a zipper-induced epitaxial lateral overgrowth, which enables co-integration of diversely shaped crystals at precise position. The grown material possesses high phase purity and excellent optical quality characterized by STEM and $μ$-PL. Optically pumped lasing at room temperature is achieved in microdisks with a lasing threshold of 365 $μJ/cm^2$, thus demonstrating promise for a wide range of photonic applications.
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