在GaAs(111)A基底上生长近单域超导铝膜用于可扩展的量子电路
Near-single-domain superconducting aluminum films on GaAs(111)A with exceptional crystalline quality for scalable quantum circuits
AI总结：
在GaAs(111)A基底上生长出高结晶质量的近单域超导铝膜，为可扩展的量子电路提供了材料平台。
摘要：
我们通过分子束外延法可重复地在GaAs(111)A晶圆上生长出近单域超导铝膜。同步辐射X射线衍射显示，19.4纳米和9.6纳米厚的薄膜中双域比分别为0.00005和0.0003，这是任何基底上铝薄膜中报道的最低值，长期以来被认为难以在实际器件平台上实现。在偏离法线方向的Al{11\bar{1}}反射的方位角扫描中，全宽半高值（FWHM）可降至0.55度，这比其他方法生长的外延铝所无法达到。正常扫描显示（111）取向明确，具有显著的Pendellösung条纹，且θ-摇摆曲线FWHM值可降至0.018度；前者表明薄膜与基底以及氧化物薄膜之间的界面 abrupt。电子背散射衍射图谱证实了宏观平面的均匀性和无Σ3双域。原子力显微镜和扫描透射电子显微镜证实了原子级光滑的表面和 abrupt的异质界面。这些薄膜的临界温度接近本征值，建立了可扩展、高相干超导量子比特的材料平台。
英文摘要：
We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and 9.6-nm-thick films, respectively-the lowest reported for Al on any substrate and long considered unattainable for practical device platforms. Azimuthal scans across off-normal Al{$11\bar{1}$} reflections exhibit narrow full width at half maximum (FWHM) values down to $0.55^\circ$, unmatched by epi-Al grown by any other method. Normal scans showed a well-defined (111) orientation with pronounced Pendellösung fringes, and $θ$-rocking-curve FWHM values down to $0.018^\circ$; the former indicates abrupt film-substrate and oxide-film interfaces. Electron backscatter diffraction mapping confirms macroscopic in-plane uniformity and the absence of $Σ$3 twin domains. Atomic force microscopy and scanning transmission electron microscopy confirmed atomically smooth surfaces and abrupt heterointerfaces. The films exhibit critical temperatures approaching bulk values, establishing a materials platform for scalable, high-coherence superconducting qubits.
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