The interlayer exchange coupling confers specific properties to Synthetic Antiferromagnets that make them suitable for several applications of spintronics. The efficient use of this magnetic configuration requires an in-depth understanding of the magnetic properties and their correlation with the material structure. Here we establish a reliable procedure to quantify the interlayer exchange coupling and the intralayer exchange stiffness in synthetic antiferromagnets; we apply it to the ultrasmooth and amorphous Co$_{40}$Fe$_{40}$B$_{20}$ (5-40 nm)/Ru/ Co$_{40}$Fe$_{40}$B$_{20}$ material platform. The complex interplay between the two exchange interactions results in a gradient of the magnetization orientation across the thickness of the stack which alters the hysteresis and the spin wave eigenmodes of the stack in a non trivial way. We measured the field-dependence of the frequencies of the first four spin waves confined within the thickness of the stack. We modeled these frequencies and the corresponding thickness profiles of these spin waves using micromagnetic simulations. The comparison with the experimental results allows to deduce the magnetic parameters that best account for the sample behavior. The exchange stiffness is established to be 16 $\pm$ 2 pJ/m, independently of the Co$_{40}$Fe$_{40}$B$_{20}$ thickness. The interlayer exchange coupling starts from -1.7 mJ/m$^2$ for the thinnest layers and it can be maintained above -1.3 mJ/m$^2$ for CoFeB layers as thick as 40 nm. The comparison of our method with earlier characterizations using the sole saturation fields argues for a need to revisit the tabulated values of interlayer exchange coupling in thick synthetic antiferromagnets.
This work reports on the thermal stability of two amorphous CoFeB layers coupled antiferromagnetically via a thin Ru interlayer. The saturation field of the artificial ferrimagnet which is determined by the coupling, J, is almost independent on the annealing temperature up to more than 300 degree C. An annealing at more than 325 degree C significantly increases the coercivity, Hc, indicating the onset of crystallization.
This work reports on the magnetic interlayer coupling between two amorphous CoFeB layers, separated by a thin Ru spacer. We observe an antiferromagnetic coupling which oscillates as a function of the Ru thickness x, with the second antiferromagnetic maximum found for x=1.0 to 1.1 nm. We have studied the switching of a CoFeB/Ru/CoFeB trilayer for a Ru thickness of 1.1 nm and found that the coercivity depends on the net magnetic moment, i.e. the thickness difference of the two CoFeB layers. The antiferromagnetic coupling is almost independent on the annealing temperatures up to 300 degree C whil…
This work reports on the magnetic reversal of sub-micrometer sized elements consisting of an CoFeB/Ru/CoFeB artificial ferrimagnet (AFi). The elements were patterned into ellipses having a width of approximately 250 to 270nm and a varying aspect ratio between 1.3 and 8. The coercivity was found to decrease with an increasing imbalance of the magnetic moment of the two antiferromagnetically coupled layers and is therefore strongly affected by an increase of effective anisotropy due to the antiferromagnetic coupling of the two layers. With respect to a single layer of amorphous CoFeB, patterned …
Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spin-orbit torque. Antiferromagnetically coupled trilayers, namely the so-called synthetic antiferromagnets (SAF), are usually employed to serve as the pinned layer of spintronic devices based on spin valves and magnetic tunnel junctions to reduce the stray field and/or increase the pinning field. Here we investigate the spin-orbit torque in MgO/CoFeB/Ta/CoFeB/MgO perpendicularly magnetized multilayer with interlayer antiferrom…
The temperature dependence of saturation and spin-flop fields for artificial ferrimagnets (AFi) based on antiparallel coupled CoFeB/Ru/CoFeB trilayers has been investigated in a temperature range between 80K and 600K. The results presented in this paper are relevant for magnetic devices using this system, e.g. magnetic-random access memory based on spin-flop switching. In good accordance to the theory, the saturation field Hsat behaves like Hsat ~ H_0 (T/T_0)/sinh(T/T_0) with a characteristic temperature of T_0 = 150K. Within this model, the Fermi velocity for the Ru layer is of the order of 1…
Interfacial Dzyaloshinskii-Moriya interaction (iDMI) in interlayer exchange coupled (IEC) Pt/Co$_{20}$Fe$_{60}$B$_{20}$(1.12 nm)/Ru/Co$_{20}$Fe$_{60}$B$_{20}$(1.12 nm) systems have been studied theoretically and experimentally. Vibrating sample magnetometer has been used to measure their magnetization at saturation and their interlayer exchange coupling constants. These latter are found to be of an antiferromagnetic nature for the investigated Ru range thickness (0.5-1 nm). Their dynamic magnetic properties were studied using Brillouin light scattering (BLS) technique. The BLS measurements rev…
We observe magnetic domain structures of MgO/CoFeB with a perpendicular magnetic easy axis under an electric field. The domain structure shows a maze pattern with electric-field dependent isotropic period. We find that the electric-field modulation of the period is explained by considering the electric-field modulation of the exchange stiffness constant in addition to the known magnetic anisotropy modulation.
We investigate the exchange stiffness constants of 28-nm-thick CoFeB film using Brillouin light scattering. Series of CoFeB films are prepared on the MgO(001) substrate with or without additional 5-nm thick MgO buffer layer, the effect of the annealing temperature on the exchange stiffness constants are studied. We found that the exchange stiffness constant of 400oC annealed sample with MgO buffer increased by 10 % form the 200oC annealed sample (=0.73 +/- 0.01 x 10-11 J/m), while the exchange stiffness constant of without MgO buffer layer sample increase by 6 % from the as-grown sample (=1.11…
Interfacial exchange and magnetostatic coupling in a CoFeB/Thulium Iron Garnet heterostructure
Virginia Commonwealth University（弗吉尼亚联邦大学）；National Institute of Standards and Technology（美国国家标准与技术研究院）；Massachusetts Institute of Technology（麻省理工学院）；Georgetown University（乔治城大学）
A study of the multilayer system MgO/CoFeB(1.1nm)/Ta($t$)/CoFeB(0.8nm)/MgO is presented, where the two CoFeB layers are separated by a Ta interlayer of varying thickness $t$. The magnetization properties deduced from complementary techniques such as superconducting quantum interference magnetometry, ferromagnetic resonance frequency measurements and Brillouin light scattering spectroscopy can be tuned by changing the Ta thickness between $t$=0.25 nm, 0.5 nm and 0.75 nm. For $t$=0.5 nm, a ferromagnetic coupling is observed, whereas for t=0.75 nm, the antiferromagnetic coupling needed to constru…
We investigated the influence of the Ta buffer layer on the thermal stability of polycrystalline Ta/ MnN/ CoFeB exchange bias systems, showing high exchange bias of about 1800 Oe at room temperature. The thermal stability of those trilayer systems is limited by nitrogen diffusion that occurs during annealing processes. Most of the nitrogen diffuses into the Ta buffer layer, which is necessary for good crystal growth of MnN and thus a crucial component of the exchange bias system. In order to improve the thermal stability, we prepared exchange bias stacks where we varied the Ta thickness to loo…
Exchange bias in ferromagnetic/antiferromagnetic systems can be explained in terms of various interfacial phenomena. Among these spin glass frustration can affect the magnetic properties in exchange bias systems. Here we have studied a NiMn/CoFeB exchange bias system in which spin glass frustration seems to play a crucial role. In order to account the effect of spin glass frustration on magnetic properties, we have performed the temperature and cooling field dependence of exchange bias. We have observed the decrease of exchange bias field (HEB) with cooling field (HFC) whereas there is not sig…
We report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) annealed at 450oC, which is approaching the theoretically predicted value. By contrast, the TMR ratios for exchange-biased (EB) SV MTJs with a MnIr antiferromagnetic layer are found to drop when they are annealed at 450oC. Energy dispersive X-ray analysis shows that annealing at 450oC induces interdiffusion of Mn and Ru atoms into the MgO barrier and ferromagnetic layers in EB-SV MTJs. Mechanisms behind the different anne…
The exchange bias effect is commonly used to shift the coercive field of a ferromagnet. This technique is crucial for the use of magnetic tunnel junctions as logic or memory devices. Therefore, an independent switching of the two ferromagnetic electrodes is necessary to guarantee a reliable readout. Here, we demonstrate that the intrinsic exchange bias effect of Ni-Mn-Sn can be used to apply a unidirectional anisotropy to magnetic tunnel junctions. For this, we use epitaxial Ni-Mn-Sn films as pinning layers for microfabricated CoFeB/MgO/CoFeB magnetic tunnel junctions. We compare the exchange …
We investigate the dependence of magnetic properties on the post-annealing temperature/time, the thickness of soft ferromagnetic electrode and Ta dusting layer in the pinned electrode as well as their correlation with the tunnel magnetoresistance ratio, in a series of perpendicular magnetic tunnel junctions of materials sequence Ta/Pd/IrMn/CoFe/Ta$(\textit{x})$/CoFeB/MgO$(\textit{y})$/CoFeB$(\textit{z})$/Ta/Pd. We obtain a large perpendicular exchange bias of 79.6$\,$kA/m for $x=0.3\,$nm. For stacks with $z=1.05\,$nm, the magnetic properties of the soft electrode resemble the characteristics o…
Antiferromagnetic Ordering Enhanced Magnetic Damping in Mn2Au/CoFeB Bilayers
State Key Laboratory of Spintronics, Nanjing University（南京大学自旋电子学国家重点实验室）；Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University（南京大学电子科学与工程学院先进光电子与光子材料江苏省重点实验室）；School of Physics, Nanjing University（南京大学物理学院）；York-Nanjing Joint Center (YNJC) for Spintronics and Nano Engineering, Department of Electronics and Physics, The University of York（约克大学电子与物理系约克-南京自旋电子学与纳米工程联合中心）；State Key Laboratory for Spintronic Devices and Technologies, Hangzhou（杭州自旋电子器件与技术国家重点实验室）
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly-magnetized CoFeB allows sensitive detection of the exchange bias. It is found that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the elec…
We present results of the analysis of Brillouin Light Scattering (BLS) measurements of spin waves performed on ultrathin single and multirepeat CoFeB layers with adjacent heavy metal layers. From a detailed study of the spin-wave dispersion relation, we independently extract the Heisenberg exchange interaction (also referred to as symmetric exchange interaction), the Dzyaloshinskii-Moriya interaction (DMI, also referred to as antisymmetric exchange interaction), and the anisotropy field. We find a large DMI in CoFeB thin films adjacent to a Pt layer and nearly vanishing DMI for CoFeB films adj…
We report the intrinsic critical current density (Jc0) in current-induced magnetization switching and the thermal stability factor (E/kBT, where E, kB, and T are the energy potential, the Boltzmann constant, and temperature, respectively) in MgO based magnetic tunnel junctions with a Co40Fe40B20(2nm)/Ru(0.7-2.4nm)/Co40Fe40B20(2nm) synthetic ferrimagnetic (SyF) free layer. We show that Jc0 and E/kBT can be determined by analyzing the average critical current density as a function of coercivity using the Slonczewski's model taking into account thermal fluctuation. We find that high antiferromagn…
Recently, magnetic tunnel junctions with perpendicular magnetized electrodes combined with exchange bias films have attracted large interest. In this paper we examine the tunnel magnetoresistance of Ta/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions in dependence on the capping layer, i.e., Hf or Ta. In these stacks perpendicular exchange bias fields of -500\,Oe along with perpendicular magnetic anisotropy are combined. A tunnel magnetoresistance of $(47.2\pm 1.4)\%$ for the Hf-capped sample was determined compared to the Ta one $(42.6\pm 0.7)\%$ at room temperature. …
Spin waves in ferrimagnetic yttrium iron garnet (YIG) films with ultralow magnetic damping are relevant for magnon-based spintronics and low-power wave-like computing. The excitation frequency of spin waves in YIG is rather low in weak external magnetic fields because of its small saturation magnetization, which limits the potential of YIG films for high-frequency applications. Here, we demonstrate how exchange-coupling to a CoFeB film enables efficient excitation of high-frequency perpendicular standing spin waves (PSSWs) in nanometer-thick (80 nm and 295 nm) YIG films using uniform microwave…
Electric-field controlled magnetization dynamics is an important integrant in low power spintronic devices. In this letter, we demonstrate electric-field induced parametric excitation for CoFeB/MgO junctions by using interfacial in-plane magnetic anisotropy. When the in-plane magnetic anisotropy and the external magnetic field are parallel to each other, magnons are efficiently excited by using electric-field induced parametric excitation. Its wavelength and wavenumber are tuned by changing input power and frequency of the applied voltage. A generalized phenomenological model is developed to e…
Domain structures in CoFeB-MgO thin films with a perpendicular easy magnetization axis were observed by magneto-optic Kerr-effect microscopy at various temperatures. The domain wall surface energy was obtained by analyzing the spatial period of the stripe domains and fitting established domain models to the period. In combination with SQUID measurements of magnetization and anisotropy energy, this leads to an estimate of the exchange stiffness and domain wall width in these films. These parameters are essential for determining whether domain walls will form in patterned structures and devices …
We investigated an out-of-plane exchange bias system that is based on the antiferromagnet MnN. Polycrystalline, highly textured film stacks of Ta / MnN / CoFeB / MgO / Ta were grown on SiO$_x$ by (reactive) magnetron sputtering and studied by x-ray diffraction and Kerr magnetometry. Nontrivial modifications of the exchange bias and the perpendicular magnetic anisotropy were observed both as functions of film thicknesses as well as field cooling temperatures. In optimized film stacks, a giant perpendicular exchange bias of 3600 Oe and a coercive field of 350 Oe were observed at room temperature…
The magnon-magnon coupling in synthetic antiferromagnets advances it as hybrid magnonic systems to explore the quantum information technologies. To induce the magnon-magnon coupling, the parity symmetry between two magnetization needs to be broken. Here we experimentally demonstrate a convenient method to break the parity symmetry by the asymmetric thickness of two magnetic layers and thus introduce a magnon-magnon coupling in Ir-based synthetic antiferromagnets CoFeB(10 nm)/Ir(tIr=0.6 nm, 1.2 nm)/CoFeB(13 nm). Remarkably, we find that the weakly uniaxial anisotropy field (~ 20 Oe) makes the m…
We report on the magnetization depth profile of a hybrid exchange spring system in which a Co/Pd multilayer with perpendicular anisotropy is coupled to a CoFeB thin film with in-plane anisotropy. The competition between these two orthogonal anisotropies promotes a strong depth dependence of the magnetization orientation. The angle of the magnetization vector is sensitive both to the strength of the individual anisotropies and to the local exchange constant, and is thus tunable by changing the thickness of the CoFeB layer and by substituting Ni for Pd in one layer of the Co/Pd stack. The result…
We study thin films and magnetic tunnel junction nanopillars based on Ta/Co$_{20}$Fe$_{60}$B$_{20}$/MgO multilayers by electrical transport and magnetometry measurements. These measurements suggest that an ultrathin magnetic oxide layer forms at the Co$_{20}$Fe$_{60}$B$_{20}$/MgO interface. At approximately 160 K, the oxide undergoes a phase transition from an insulating antiferromagnet at low temperatures to a conductive weak ferromagnet at high temperatures. This interfacial magnetic oxide is expected to have significant impact on the magnetic properties of CoFeB-based multilayers used in sp…
We investigated the effect of using a synthetic ferrimagnetic (SyF) free layer in MgO-based magnetic tunnel junctions (MTJs) on current-induced magnetization switching (CIMS), particularly for application to spin-transfer torque random access memory (SPRAM). The employed SyF free layer had a Co40Fe40B20/ Ru/ Co40Fe40B20 and Co20Fe60B20/Ru/Co20Fe60B20 structures, and the MTJs(100x(150-300) nm^2) were annealed at 300oC. The use of SyF free layer resulted in low intrinsic critical current density (Jc0) without degrading the thermal-stability factor (E/kBT, where E, kB, and T are the energy potent…
We present a study of the spin transfer torque oscillator based on CoFeB/MgO/CoFeB asymmetric magnetic tunnel junctions. We observe microwave precession in junctions with different thickness of the free magnetization layer. Taking advantage of the ferromagnetic interlayer exchange coupling between the free and reference layer in the MTJ and perpendicular interface anisotropy in thin CoFeB electrode we demonstrate the nanometer scale device that can generate high frequency signal without external magnetic field applied. The amplitude of the oscillation exceeds 10 nV/Hz^0.5 at 1.5 GHz.
We report on terahertz emission from FeMnPt/Ru/FeMnPt and Pt/CoFeB/Ru/CoFeB/Pt synthetic antiferromagnet (SAF) structures upon irradiation by a femtosecond laser; the former is via the anomalous Hall effect, whereas the latter is through the inverse spin Hall effect. The antiparallel alignment of the two ferromagnetic layers leads to a terahertz emission peak amplitude that is almost double that for a corresponding single-layer or bilayer emitter with the same equivalent thickness. In addition, we demonstrate by both simulation and experiment that terahertz emission provides a powerful tool to…
We have combined neutron scattering and piezoresponse force microscopy to study the relation between the exchange bias observed in CoFeB/BiFeO3 heterostructures and the multiferroic domain structure of the BiFeO3 films. We show that the exchange field scales with the inverse of the ferroelectric and antiferromagnetic domain size, as expected from Malozemoff's model of exchange bias extended to multiferroics. Accordingly, polarized neutron reflectometry reveals the presence of uncompensated spins in the BiFeO3 film at the interface with the CoFeB. In view of these results we discuss possible st…
We report the observation of a Pt layer thickness dependence on the induced interfacial Dzyaloshinskii-Moriya interaction in ultra-thin Pt($d_{\text{Pt}}$)/CoFeB films. Taking advantage of the large spin-orbit coupling of the heavy metal, the interfacial Dzyaloshinskii-Moriya interaction is quantified by Brillouin light scattering measurements of the frequency non-reciprocity of spin-waves in the ferromagnet. The magnitude of the induced Dzyaloshinskii-Moriya coupling is found to saturate to a value $0.45$ mJ$/$m${}^2$ for Pt thicknesses larger than $\sim 2$ nm. The experimental results are ex…
Beyond conventional skyrmions in synthetic antiferromagnets
University of Glasgow（格拉斯哥大学）；Swiss Federal Laboratories for Material Science and Technology (Empa)（瑞士联邦材料科学与技术研究所）；National Physical Laboratory（英国国家物理实验室）；University of California, Santa Cruz（加州大学圣克鲁兹分校）；Politecnico di Bari（巴里理工大学）；University of Leeds（利兹大学）；Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室）
We theoretically demonstrate that the ultrafast magnetic order dynamics in antiferromagnets is exchange-enhanced in comparison to their ferromagnetic counterparts. We provide an equation of motion for the magnetic order dynamics validated by computer simulations using atomistic spin dynamics methods. The exchange of angular momentum between sublattices speeds up the dynamics in antiferromagnets, a process absent in ferromagnets.
We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the rotation and pinning of antiferromagnetic moments in IrMn. At higher temperatures, the broadened loops show zero shift which correlates with the observation of fully rotating antiferromagnetic moments…
We studied exchange bias in magnetic multilayers incorporating antiferromagent CoO doped with up to 35 atomic percent of Pt. The exchange bias increased with doping in epitaxial films, but did not significantly change in polycrystalline films at the lowest measured temperature of 5 K, and decreased at higher temperatures. We explain our results by the increased granularity of the doped antiferromagnetic films, resulting in simultaneous enhancement of the uncompensated spin density and reduction of the magnetic stability of antiferromagnetic grains.
Exchange coupling between two magnetic layers through an interlayer is of broad interest for numerous recent applications of nano-magnetic systems. In this Letter we study ferromagnetic exchange coupling through amorphous paramagnetic Fe-Ta alloys. We show that the exchange coupling depends exponentially on spacer thickness and scales with the Fe-Ta susceptibility, which can be tuned via the alloy composition and/or temperature. Such materials are of high interest for the engineering of perpendicularly magnetized CoFeB-MgO based tunnel junctions as it enables ferromagnetic coupling of magnetic…
Measurements of coherent electron spin dynamics in Ga(1-x)Mn(x)As/Al(0.4)Ga(0.6)As quantum wells with 0.0006% < x < 0.03% show an antiferromagnetic (negative) exchange bewteen s-like conduction band electrons and electrons localized in the d-shell of the Mn2+ impurities. The magnitude of the s-d exchange parameter, N0 alpha, varies as a function of well width indicative of a large and negative contribution due to kinetic exchange. In the limit of no quantum confinement, N0 alpha extrapolates to -0.09 +/- 0.03 eV indicating that antiferromagnetic s-d exchange is a bulk property of GaMnAs. Measu…
In this work, IrMn$_{3}$/insulating-Y$_{3}$Fe$_{5}$O$_{12}$ exchange-biased bilayers are studied. The behavior of the net magnetic moment $Δm_{AFM}$ in the antiferromagnet is directly probed by anomalous and planar Hall effects, and anisotropic magnetoresistance. The $Δm_{AFM}$ is proved to come from the interfacial uncompensated magnetic moment. We demonstrate that the exchange bias and rotational hysteresis are induced by the irreversible switching of the $Δm_{AFM}$. In the training effect, the $Δm_{AFM}$ changes continuously. This work highlights the fundamental role of the $Δm_{AFM}$ in th…
The magnetic characteristics of polycrystalline exchange-biased antiferromagnet/ferromagnet-bilayers are determined by a complex interplay of parameters, describing structural and magnetic properties of the material system, including in particular the grain volume distribution of the antiferromagnet. An ideal characterization of such systems would be a non-destructive determination of the relevant parameters for each individual grain. This is in most cases not feasible, since typical characterization methods do average over larger areas. Here, we show that it is however possible to determine a…
Complementary nature of coercivity enhancement and exchange bias is generalized from the layered systems to ferro-antiferromagnet (F-AF) exchange coupled systems with arbitrary configurations and is proved based on the coherent rotation of the F magnetization. In the proof, the effect of F-AF coupling is absorbed into the anisotropy of the F part, resulting in an arbitrary anisotropy for the F part. The proof starts from a general discussion on the initial susceptibility of a single domain particle. Then the fundamental correlation between the maximal initial susceptibility and the critical fi…
Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures with Néel order in an antiferromagnetic CrSb and magnetic topological order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineering. Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the magnetic properties of the topologica…
The irreversible thermoremanent magnetization of a sole, magnetically diluted epitaxial antiferromagnetic Co$_{1-y}$O(100) layer is determined by the mean of its thermoremanent magnetizations at positive and negative remanence. During hysteresis-loop field cycling, thermoremanent magnetization exhibits successive reductions, consistent with the training effect (TE) of the exchange bias measured for the corresponding Co$_{1-y}$O(100)/Co bilayer. The TE of exchange bias is shown to have its microscopic origin in the TE of the irreversible thermoremanent magnetization of the magnetically diluted …
We have put into evidence the existence of an antiferromagnetic coupling between iron epilayers separated by a ZnSe crystalline semiconductor. The effect has been observed for ZnSe spacers thinner than 4 nm at room-temperature. The coupling constant increases linearly with temperature with a constant slope of ~5.5x 10-9 J/m2K. The mechanisms that may explain such exchange interaction are discussed in the manuscript. It results that thermally-induced effective exchange coupling mediated by spin-dependent on and off resonant tunnelling of electrons via localized mid-gap defect states in the ZnSe…
Magnetic vortices have generated intense interest in recent years due to their unique reversal mechanisms, fascinating topological properties, and exciting potential applications. Additionally, the exchange coupling of magnetic vortices to antiferromagnets has also been shown to lead to a range of novel phenomena and functionalities. Here we report a new magnetization reversal mode of magnetic vortices in exchange coupled Ir20Mn80/Fe20Ni80 microdots: distorted viscous vortex reversal. Contrary to the previously known or proposed reversal modes, the vortex is distorted close to the interface an…
Nature of magnetic exchange interactions in kagome antiferromagnets FeGe and FeSn
Institute of High Pressure Physics, School of Physical Science and Technology, Ningbo University（宁波大学物理科学与技术学院高压物理研究所）；College of Science, Nanjing University of Aeronautics and Astronautics（南京航空航天大学理学院）
The effect of nonmagnetic metal additives in metallic antiferromagnets (AFMs) on the exchange bias (EB) has been investigated from a structural, magnetic and Monte Carlo simulation point of view in bilayers of CoFe/IrMn:Cu. Dilution by Cu atoms throughout the volume of the AFM IrMn give rise to an enhanced EB field for temperatures between 5 K and 300 K. The thermoremanent magnetization of the AFM-only is also enhanced with dilution, shows qualitatively the same temperature dependence as EB field and is at the origin of the EB mechanism. Monte Carlo simulations based on a Heisenberg model and …
Magnetic skyrmions are topological spin textures holding great potential as nanoscale information carriers. Recently, skyrmions have been predicted in antiferromagnets, with key advantages in terms of stability, size, and dynamical properties over their ferromagnetic analogs. However, their experimental demonstration is still lacking. Here, we show the imprint from ferromagnetic skyrmions into a thin film of an IrMn antiferromagnet, at room temperature and zero external magnetic field, using exchange-bias. Using high-spatial-resolution x-ray magnetic circular dichroism photoemission electron m…
The effect of orbital degrees of freedom on the exchange interactions in the spin-1 quasi-one-dimensional antiferromagnet CaV2O4 is systematically studied. For this purpose a realistic low-energy model with the parameters derived from the first-principles calculations is constructed. The exchange interactions are calculated using both the theory of infinitesimal spin rotations near the mean-field ground state and the superexchange model, which provide a consistent description. The obtained behaviour of exchange interactions substantially differs from the previously proposed phenomenological pi…
The exchange interaction determines the ferromagnetic (FM) or antiferromagnetic (AFM) ordering of atomic spins. When ferromagnets and antiferromagnets are coupled together, they often exhibit the exchange bias effect, a unidirectional interface exchange field causing a shift of the magnetic hysteresis loop. The effective magnitude of this interface exchange field is at most a few percent of the bulk exchange, arising from pinned interfacial spins in the antiferromagnet. The pinned spins are known to comprise a small fraction of the total number of interface spins, yet their exact nature and ph…
We have employed Soft and Hard X-ray Resonant Magnetic Scattering and Polarised Neutron Diffraction to study the magnetic interface and the bulk antiferromagnetic domain state of the archetypal epitaxial Ni$_{81}$Fe$_{19}$(111)/CoO(111) exchange biased bilayer. The combination of these scattering tools provides unprecedented detailed insights into the still incomplete understanding of some key manifestations of the exchange bias effect. We show that the several orders of magnitude difference between the expected and measured value of exchange bias field is caused by an almost anisotropic in-pl…
We have performed magnetic measurements like temperature (T), cooling field (HFC) dependence of exchange bias (EB) and training effect to investigate the magnetic nature of the interface of the Fe/Ir20Mn80 systems. Thin film bilayer samples of different thicknesses of Ir20Mn80 have been prepared by dc magnetron sputtering at room temperature. The variation of exchange bias field (HEB) with the increase in thickness of Ir20Mn80 predicts the antiferromagnet (AFM) bulk spins contribution to EB. Exponential decay of HEB and coercive field (HC) with temperature reveals the presence of spin glass (S…
The materials exhibiting exchange bias (EB) have been extensively investigated mainly due to their great technological applications in magnetic sensors, but its underlying mechanism remains elusive. Here we report the novel coexistence of in-plane and out-of-plane EB in the Cr-doped Mn3Sn, a non-colinear antiferromagnet with a geometrically frustrated Kagome plane of Mn. Field-cooling experiments with the applied field parallel and perpendicular to the frustrated Kagome plane exhibits loop shifts and enhanced coercivities. Interestingly, a maximum EB field of 1090 Oe is observed along out-of-p…
