交换耦合IrMn/NiFe堆反铁磁矩的电学测量
Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks
摘要：
我们利用最近发现的反铁磁隧穿各向异性磁电阻来研究IrMn交换耦合到NiFe中的反铁磁有序矩的行为。由常见的实验室工具进行的磁化和电输运测量的实验，使我们能够直接链接的NiFe磁滞回线和它的移位（交换偏置）的扩大的旋转和钉扎IrMn的反铁磁力矩。在更高的温度下，加宽的环路显示零位移，这与观察到的IrMn膜内的完全旋转的反铁磁矩相关。在较低的温度下的交换偏置的发病与不同的亚稳态和钉扎在这些状态的IrMn反铁磁矩之间的部分旋转。这一观察补充了交换偏置的常见图片，并揭示了反铁磁体中存在可电测量的记忆效应。
英文摘要：
We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the rotation and pinning of antiferromagnetic moments in IrMn. At higher temperatures, the broadened loops show zero shift which correlates with the observation of fully rotating antiferromagnetic moments inside the IrMn film. The onset of exchange bias at lower temperatures is linked to a partial rotation between distinct metastable states and pinning of the IrMn antiferromagnetic moments in these states. The observation complements common pictures of exchange bias and reveals the presence of an electrically measurable memory effect in an antiferromagnet.
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