Electrical manipulation of a ferromagnet by an antiferromagnet
V. Tshitoyan, C. Ciccarelli, A. P. Mihai, M. Ali, A. C. Irvine, T. A. Moore, T. Jungwirth, A. J. Ferguson
备注：
Main text: 7 pages, 6 figures. Includes supplementary information of 10 pages, 8 figures. Changes from the previous version include a new control experiment, two new figures in the main text, expanded discussion on the origins of the observed effect. Additionally, 2 new supplementary sections have been added
We demonstrate that an antiferromagnet can be employed for a highly efficient electrical manipulation of a ferromagnet. In our study we use an electrical detection technique of the ferromagnetic resonance driven by an in-plane ac-current in a NiFe/IrMn bilayer. At room temperature, we observe antidamping-like spin torque acting on the NiFe ferromagnet, generated by the in-plane current driven through the IrMn antiferromagnet. A large enhancement of the torque, characterized by an effective spin-Hall angle exceeding most heavy transition metals, correlates with the presence of the exchange-bias field at the NiFe/IrMn interface. It highlights that, in addition to strong spin-orbit coupling, the antiferromagnetic order in IrMn governs the observed phenomenon.
We present a theoretical mapping to show that a ferromagnet with gain (loss) is equivalent to an antiferromagnet with an equal amount of loss (gain). Our finding indicates a novel first-order ferromagnet-antiferromagnet phase transition by tuning the gain-loss parameter. As an appealing application, we demonstrate the realization as well as the manipulation of the antiferromagnetic skyrmion, a stable topological quasiparticle not yet observed experimentally, in a chiral ferromagnetic thin film with gain. We also consider ferromagnetic bilayers with balanced gain and loss, and show that the ant…
We study the problem of controlling spin waves propagation through an antiferromagnet/ferromagnet interface via tuning material parameters. It is done by introducing the degree of sublattice noncompensation of antiferromagnet (DSNA), which is a physical characteristic of finite-thickness interfaces. The DSNA value can be varied by designing interfaces with a particular disorder or curvilinear geometry. We describe a spin-wave propagation through any designed antiferromagnet/ferromagnet interface considering a variable DSNA and appropriate boundary conditions. As a result, we calculate the phys…
Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization make antiferromagnets hard to control by tools common in ferromagnets. Remarkably, Neel in his lecture provides the key which, as we show here, allows us to control antiferromagnets by electrical means analogous to those which paved the way to the development of ferromagnetic spintronics applications. The key noted b…
We consider electron transport in ferromagnets or antiferromagnets sandwiched between metals. When spins in the magnetic materials precess, they emit currents into the surrounding conductors. Generally, adiabatic pumping in mesoscopic systems also enhances current fluctuations. We generalize the description of current fluctuations driven by spin dynamics in three ways using scattering theory. First, our theory describes a general junction with any given electron scattering properties. Second, we consider antiferromagnets as well as ferromagnets. Third, we treat multiterminal devices. Using sho…
By comparing femtosecond laser pulse induced ferro- and antiferromagnetic dynamics in one and the same material - metallic dysprosium - we show both to behave fundamentally different. Antiferromagnetic order is considerably faster and much more efficiently manipulated by optical excitation than its ferromagnetic counterpart. We assign the fast and extremely efficient process in the antiferromagnet to an interatomic transfer of angular momentum within the spin system. Our findings do not only reveal this angular momentum transfer channel effective in antiferromagnets and other magnetic structur…
We propose to use ferromagnetic insulator MnBi2Se4/Bi2Se3/antiferromagnetic insulator Mn2Bi2Se5 heterostructures for the realization of the axion insulator state. Importantly, the axion insulator state in such heterostructures only depends on the magnetization of the ferromagnetic insulator and hence can be observed in a wide range of external magnetic field. Using density functional calculations and model Hamiltonian simulations, we find that the top and bottom surfaces have opposite half-quantum Hall conductance, with a sizable global spin gap of 5.1 meV opened for the topological surface st…
Spin-orbit coupling enables charge currents to give rise to spin currents and vice versa, which has applications in non-volatile magnetic memories, miniature microwave oscillators, thermoelectric converters and Terahertz devices. In the past two decades, a considerable amount of research has focused on electrical spin current generation in different types of nonmagnetic materials. However, electrical spin current generation in ferromagnetic materials has only recently been actively investigated. Due to the additional symmetry breaking by the magnetization, ferromagnetic materials generate spin…
We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $kΩ$ at 300 $K$. The yield of device resistances below 100 $kΩ$, at 300 $K$, is around 50%. We measure at 2 $K$ a hysteretic magneto-resistance due to the magnetization reversal of the ferromagnetic leads. The relative difference between the resistance in the antiparallel (AP) orientation and the parallel (P) orientation is about 2%.
Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed for spin reversal detection in non-collinear antiferromagnets, is limited to materials that crystalize in ferromagnetic symmetry groups. Here we demonstrate electrical detection of the 180 deg Néel vec…
Microwaves couple to magnetic moments in both ferromagnets and antiferromagnets. Although the magnons in ferromagnets and antiferromagnets radically differ, they can become entangled via strong coupling to the same microwave mode in a cavity. The equilibrium configuration of the magnetic moments crucially governs the coupling between the different magnons because the antiferromagnetic and ferromagnetic magnons have the opposite spins when their dispersion relations cross. We derive analytical expressions for the coupling strengths and find that the coupling between antiferromagnets and ferroma…
In this work we focus on magnetic relaxation in Mn$_{80}$Ir$_{20}$(12 nm)/ Cu(6 nm)/ Py($d_\mathrm{F}$) antiferromagnet/Cu/ferromagnet (AFM/Cu/FM) multilayers with different thickness of the ferromagnetic permalloy layer. An effective FM-AFM interaction mediated via the conduction electrons in the nonmagnetic Cu spacer -- the spin-pumping effect -- is detected as an increase in the linewidth of the ferromagnetic resonance (FMR) spectra and a shift of the resonant magnetic field. We further find experimentally that the spin-pumping-induced contribution to the linewidth is inversely proportional…
We develop a theory for spin transported by coherent Neel dynamics through an antiferromagnetic insulator coupled to a ferromagnetic insulator on one side and a current-carrying normal metal with strong spin-orbit coupling on the other. The ferromagnet is considered within the mono-domain limit and we assume its coupling to the local antiferromagnet Neel order at the ferromagnet|antiferromagnet interface through exchange coupling. Coupling between the charge current and the local Neel order at the other interface is described using spin Hall phenomenology. Spin transport through the antiferrom…
In an antiferromagnet (AF) with uniaxial anisotropy, spin-up and spin-down magnons coexist and form an intrinsic degree of freedom resembling electrons. When polarized by an adjacent ferromagnet (F), a magnonic pure spin current can be thermally generated in an AF. We explore thermal magnon transport in an insulating F/AF/F trilayer where propagating magnons inside the AF spacer can transfer angular momenta between the two Fs. We find that a sufficiently large temperature gradient can switch the downstream F via magnonic spin-transfer torque if it is initially antiparallel with the upstream F.…
It is shown that the current-induced torques between a ferromagnetic layer and an antiferromagnetic layer with a compensated interface vanish when the ferromagnet is aligned with an axis of spin-rotation symmetry of the antiferromagnet. For properly chosen geometries this implies that the current induced torque can stabilize the out-of-plane (or hard axis) orientation of the ferromagnetic layer. This current-induced torque relies on phase coherent transport, and we calculate the robustness of this torque to phase breaking scattering. From this it is shown that the torque is not linearly depend…
We present the theoretical description for a class of experimental setups that measure quantum Hall coefficients in ferromagnet-topological insulator-ferromagnet (FM-TI-FM) junctions. We predict that varying the magnetization direction in ferromagnets, one can change the induced Hall voltage and transverse temperature gradient from the maximal values, corresponding to the quantized Hall coefficients, down to their complete suppression to zero. We provide detailed analysis of thermal and electrical Hall resistances as functions of the magnetization directions in ferromagnets, the spin-scatterin…
We report direct electrical detection of spin pumping, using a lateral normal metal/ferromagnet/normal metal device, where a single ferromagnet in ferromagnetic resonance pumps spin polarized electrons into the normal metal, resulting in spin accumulation. The resulting backflow of spin current into the ferromagnet generates a d.c. voltage due to the spin dependent conductivities of the ferromagnet. By comparing different contact materials (Al and /or Pt), we find, in agreement with theory, that the spin related properties of the normal metal dictate the magnitude of the d.c. voltage.
Spin Hall magnetoresistance (SMR) has been observed in Pt/NiO/Y3Fe5O12 (YIG) heterostructures with characteristics very different from those in Pt/YIG. We show that the SMR in Pt/NiO/YIG strongly correlates with spin conductance, both sharing very strong temperature dependence due to antiferromagnetic magnons and spin fluctuation. This phenomenon indicates that spin current generated by spin Hall effect in the Pt transmits through the insulating NiO and is reflected from the NiO/YIG interface. Inverted SMR has been observed below a temperature which increases with the NiO thickness, suggesting…
We explore routes to realize electrically driven Bose-Einstein condensation of magnons in insulating antiferromagnets. Even in insulating antiferromagnets, the localized spins can strongly couple to itinerant spins in adjacent metals via spin-transfer torque and spin pumping. We describe the formation of steady-state magnon condensates controlled by a spin accumulation polarized along the staggered field in an adjacent normal metal. Two types of magnons exist in antiferromagnets, which carry opposite magnetic moments. Consequently, and in contrast to ferromagnets, Bose-Einstein condensation ca…
We analyse the influence of current induced torques on the magnetization configuration of a ferromagnet in a circuit containing a compensated antiferromagnet. We argue that these torques are generically non-zero and support this conclusion with a microscopic NEGF calculation for a circuit containing antiferromagnetic NiMn and ferromagnetic Co layers. Because of symmetry dictated differences in the form of the current-induced torque, the phase diagram which expresses the dependence of ferromagnet configuration on current and external magnetic field differs qualitatively from its ferromagnet-onl…
Inertial effects in spin dynamics are theoretically predicted to emerge at ultrashort time scales, but their experimental signatures are often ambiguous. Here, we calculate the spin-wave spectrum in ferromagnets and two-sublattice antiferromagnets in the presence of inertial effects. It is shown how precession and nutation spin waves hybridize with each other, leading to the renormalization of the frequencies, the group velocities, the effective gyromagnetic ratios and the effective damping parameters. Possible ways of distinguishing between the signatures of inertial dynamics and similar effe…
While the electrical current manipulation of antiferromagnets (AFMs) has been demonstrated, the extent of the studied AFM materials has been limited with few systematic experiments and a poor understanding. We compare the electrical current switching of the exchange-bias field ($H_{ex}$) in AFM-Mn$_3A$N/ferromagnet-Co$_3$FeN bilayers. An applied pulse current can manipulate $H_{ex}$ with respect to the current density and FM layer magnetization, which shifts exponentially as a function of the current density. We found that the saturation current density and exponential decay constant $τ$ incre…
We describe electrical detection of spin pumping in metallic nanostructures. In the spin pumping effect, a precessing ferromagnet attached to a normal-metal acts as a pump of spin-polarized current, giving rise to a spin accumulation. The resulting spin accumulation induces a backflow of spin current into the ferromagnet and generates a dc voltage due to the spin dependent conductivities of the ferromagnet. The magnitude of such voltage is proportional to the spin-relaxation properties of the normal-metal. By using platinum as a contact material we observe, in agreement with theory, that the v…
We show that Co spins in Co/FeRh epitaxial bilayers grown on W(110) switch reversibly between the two orthogonal in-plane directions as the FeRh layer undergoes temperature driven antiferromagnetic-ferromagnetic (AFM-FM) phase transition. Switching of Co magnetization is characterized by a hysteretic behavior owing to a temperature hysteresis of the AFM-FM transition in FeRh. The spin reorientation of Co is driven by the evolution interfacial exchange coupling to FeRh system across the AFM-FM process. Our results provide a new method of writing information purely by a local temperature change.
Selective and large polarization of current injected into semiconductor (SC) is predicted in Ferromagnet (FM)/Quantum Dot (QD)/SC system by varying the gate voltage above the Kondo temperature. In addition, spin-dependent Kondo effect is also revealed below Kondo temperature. It is found that Kondo resonances for up spin state is suppressed with increasing of the polarization P of the FM lead. While the down one is enhanced. The Kondo peak for up spin is disappear at P=1.
Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interests. However, the all-electrical control of such systems at room temperature, a crucial step toward practical applications, has not been reported. Here using a small writing current of around 5*10^{6} A/cm^{2}, we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn3Sn with a strong readout signal at room te…
We demonstrate that antiferromagnet-superconductor (AF-S) junctions show qualitatively different transport properties than normal metal-superconductor (N--S) and ferromagnet-superconductor (F-S) junctions. We attribute these transport features to presence of two new scattering processes in AF--S junctions, i.e., specular reflection of holes and retroreflection of electrons. Using the Blonder-Tinkham-Klapwijk formalism, we find that the electrical and thermal conductance depend nontrivially on antiferromagnetic exchange strength. Furthermore, we show that the interplay between the Néel vector d…
