The focused electron beam induced deposition (FEBID) process was used by employing a Gemini SEM with a beam characteristic of 1keV and 24pA for the deposition of pillars and line shaped deposits with heights between 9nm to 1um and widths from 5nm to 0.5um. All structures have been analyzed to their composition looking at a desired Si : O : C content of 1: 2 : 0. The C content of the structure was found to be ~over 60% for older deposits kept in air (~at room temperature) and less than 50% for younger deposits, only 12 hours old. Using a deposition of Si(OEt)4 at high rates and a deposition temperature of under 0 degC, an Si content of our structure between 10at% and 15at% (compositional percentage) was obtained. The FEBID structures have been deposited on Au(111) over an SiO2 wafer. The Au(111) was chosen as a substrate for the deposition of Si(OEt)4 due to its structural and morphological properties, with its surface granulation following a Chevron pattern, and the Au(111) defects having a higher contribution to the change in the composition of the final content of the structure with the increase in O ratio and a reduction in the shapes heights.
Poly(methyl methacrylate) - Palladium clusters nanocomposite formation by supersonic cluster beam deposition: a method for microstructured metallization of polymer surfaces
Over what length scale does an inorganic substrate perturb the structure of a glassy organic semiconductor?
University of Wisconsin-Madison（威斯康星大学麦迪逊分校）；Pritzker School of Molecular Engineering, University of Chicago（芝加哥大学普里茨克分子工程学院）；Argonne National Laboratory（阿贡国家实验室）；SLAC National Accelerator Laboratory（SLAC国家加速器实验室）
Assessment of the (010) $β$-Ga$_2$O$_3$ Surface and Substrate Specification
最近在镓氧化物（$β$ O $_3$）的结晶稳定的β相的体晶体生长方面的突破已经导致大面积β-Ga $_2$ O $_3$衬底的商业化，随后在（010）衬底上外延生长，产生高质量的膜。此外，已知金属有机化学气相沉积（MOCVD）、分子束外延（MBE）和（010）$β$ O $_3$表面的处理沿[001]方向形成亚纳米尺度的小平面以及具有垂直于[001]方向的特征的较大脊。（010）表面的密度泛函理论计算表明，表面的有序性是沿着[001]方向的亚纳米尺度特征。此外，给出了$β$ $_2$ O $_3$的一般晶体结构，并给出了标准化（010）衬底的建议，以考虑和控制较大尺度的脊的形成.
Structural peculiarities of $\varepsilon$-Fe$_2$O$_3$ / GaN epitaxial layers unveiled by high-resolution transmission electron microscopy and neutron reflectometry
采用脉冲激光沉积法在半导体GAN（0001）衬底上生长了亚稳铁氧化物（$\varepsilon$ -Fe $_2$ O $_3$）外延膜，并对其晶体学特性进行了结构研究。纳米级$\varepsilon$ -Fe $_2$ O $_3$薄膜的柱状结构已被首次使用高分辨电子显微镜（HRTEM）直接空间技术辅以倒易空间方法的高能电子衍射和彩色增强HRTEM图像傅立叶滤波。通过中子反射仪和能量色散X射线光谱法对$\varepsilon$ -Fe $_2$ O $_3$ / GAN界面形成进行了深度分辨密度和化学成分分析，进一步扩展了对界面形成的研究。研究结果揭示了位于$\varepsilon$ -Fe $_2$ O $_3$ / GAN界面的几纳米厚的低密度过渡层的性质和来源。该层的性质的详细知识被认为对于$\varepsilon$ -Fe $_2$ O $_3$ / GAN异质结构的开发是非常重要的，所述异质结构可以潜在地成为具有室温磁电耦合的基于铁氧化物的半导体上铁器件的一部分。
