AI 中文总结
该研究以有机半导体DSA-Ph气相沉积玻璃为对象，结合掠入射X射线散射实验与分子动力学模拟，发现硅、金衬底可在约8 nm尺度上扰动其分子堆积，沉积温度还会影响界面层外的玻璃结构。
AI 中文摘要
尽管气相沉积玻璃的体相结构已被广泛研究，但埋入界面处的结构却很少受到关注，而该结构对有机电子应用十分重要。为了解埋入界面处的玻璃结构，我们研究有机半导体DSA-Ph（1,4-二-[4-(N,N-二苯基)氨基]苯乙烯基苯）的气相沉积玻璃结构随膜厚的变化，采用掠入射X射线散射探测结构。我们在硅和金衬底上沉积，膜厚范围为10至600 nm。实验表明，DSA-Ph气相沉积玻璃的界面分子堆积相比体相更无序；在接近室温的沉积温度下，我们估计衬底附近约8 nm范围内的分子堆积会发生改变。对DSA-Ph粗粒化模型的分子动力学模拟显示出相似的长度尺度。在模拟和实验中，沉积温度都会控制该几纳米厚的界面层之外的玻璃结构。
英文摘要
While the bulk structure of vapor-deposited glasses has been extensively studied, structure at buried interfaces has received little attention, despite being important for organic electronic applications. To learn about glass structure at buried interfaces, we study the structure of vapor-deposited glasses of the organic semiconductor DSA-Ph (1,4-di-[4-(N,N-diphenyl)amino]styryl-benzene) as a function of film thickness; structure is probed with grazing incidence X-ray scattering. We deposit on silicon and gold substrates and span a film thickness range of 10-600 nm. Our experiments demonstrate that interfacial molecular packing in vapor-deposited glasses of DSA-Ph is more disordered compared to the bulk. At a deposition temperature near room temperature, we estimate ~ 8 nm near the substrate can have modified molecular packing. Molecular dynamics simulations of a coarse-grained representation of DSA-Ph reveal a similar length scale. In both the simulations and the experiments, deposition temperature controls glass structure beyond this interfacial layer of a few nanometers.
Comments35 pages, 6 figures, 55 references: Supplemental material (9 figures)
Journal refACS Appl. Mater. Interfaces 2020, 12, 26717-26726
