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arXiv 2203.09310cond-mat.mtrl-sci
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Ge-Sb-Te相变记忆合金中空位有序的原位表征

In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys

Ting-Ting Jiang, Xu-Dong Wang, Jiang-Jing Wang, Han-Yi Zhang, Lu Lu, Chunlin Jia, Matthias Wuttig, Riccardo Mazzarello, Wei Zhang, En Ma

摘要:

调整Ge-Sb-Te合金的结构无序度对于非易失性相变存储器和神经启发计算的发展具有重要意义。在从非晶相结晶时,这些合金形成具有高含量的本征空位的立方岩盐状结构。进一步的热退火导致朝向层状结构的逐渐结构转变和绝缘体到金属的转变。在这项工作中,我们阐明了原子级的细节,在晶体GeSb 2 Te 4的结构转变,通过原位高分辨率透射电子显微镜(HRTEM)实验和从头算密度泛函理论(DFT)计算,提供了一个全面的实时和实时的空位有序化过程的空间视图。我们还讨论了空位有序的影响,改变电子和光学性质的GeSb 2 Te 4,这是相关的多级存储应用。用总结图描述了Ge-Sb-Te合金的相演化路径,为相变存储器件的设计提供了指导。

英文摘要:

Tailoring the degree of structural disorder in Ge-Sb-Te alloys is important for the development of non-volatile phase-change memory and neuro-inspired computing. Upon crystallization from the amorphous phase, these alloys form a cubic rocksalt-like structure with a high content of intrinsic vacancies. Further thermal annealing results in a gradual structural transition towards a layered structure and an insulator-to-metal transition. In this work, we elucidate the atomic-level details of the structural transition in crystalline GeSb2Te4 by in situ high-resolution transmission electron microscopy (HRTEM) experiments and ab initio density functional theory (DFT) calculations, providing a comprehensive real-time and real-space view of the vacancy ordering process. We also discuss the impact of vacancy ordering on altering the electronic and optical properties of GeSb2Te4, which is relevant to multilevel storage applications. The phase evolution paths in Ge-Sb-Te alloys are illustrated using a summary diagram, which serves as a guide for designing phase-change memory devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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