单片扩展短波红外GeSn PIN光电探测器的暗电流
Dark current in monolithic extended-SWIR GeSn PIN photodetectors
摘要：
扩展短波红外（e-SWIR）光电探测器（PD）在硅上的单片集成是非常受欢迎的，以实现可制造的，具有成本效益的传感和成像技术。从这个角度来看，GeSn PIN PD由于其带隙可调谐性和硅兼容性而成为广泛研究的主题。然而，由于生长缺陷，与商业III-V PD相比，这些PD遭受相对高的暗电流密度。在此，我们阐明了在$2.6 \, μ$ m GeSn PDs的暗电流在$10$的Sn含量为.%的机制。结果发现，在$293 \, $ K -$363 \,$ K的温度范围内，在低偏压下，扩散和肖克利-里德-霍尔（SRH）泄漏机制在小直径（$20 \, μ$ m）器件中占主导地位，而结合SRH和陷阱辅助隧穿（TAT）泄漏机制在大直径（$160 \, μ$ m）器件中突出。然而，在高反向偏压下，TAT泄漏机制变得占主导地位，无论工作温度和器件尺寸。在这些器件中的有效非辐射载流子寿命被发现在低偏压下达到$\sim 300$ - $400$ ps。然而，由于TAT漏电流，该寿命随着偏置的增加而逐渐减小。
英文摘要：
The monolithic integration of extended short-wave infrared (e-SWIR) photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and imaging technologies. With this perspective, GeSn PIN PDs have been the subject of extensive investigations because of their bandgap tunability and silicon compatibility. However, due to growth defects, these PDs suffer a relatively high dark current density as compared to commercial III-V PDs. Herein, we elucidate the mechanisms governing the dark current in $2.6 \, μ$m GeSn PDs at a Sn content of $10$ at.%. It was found that in the temperature range of $293 \, $K -- $363 \,$K and at low bias, the diffusion and Shockley-Read-Hall (SRH) leakage mechanisms dominate the dark current in small diameter ($20 \, μ$m) devices, while combined SRH and trap assisted tunneling (TAT) leakage mechanisms are prominent in larger diameter ($160 \, μ$m) devices. However, at high reverse bias, TAT leakage mechanism becomes dominant regardless of the operating temperature and device size. The effective non-radiative carrier lifetime in these devices was found to reach $\sim 300$ -- $400$ ps at low bias. Owing to TAT leakage current, however, this lifetime reduces progressively as the bias increases.
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