锗锡选择性区域生长及短波红外光探测的研究
Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection
AI总结：
研究GeSn光电器件集成问题，采用选择性区域生长方法，实现了不同Sn含量且光学质量良好的GeSn SAG，展示了相关光电器件，研究了不同窗口尺寸和形状下的生长条件及负载效应。
AI中文摘要：
随着锗锡（GeSn）外延生长质量不断提高，将GeSn光电器件高效集成到互补金属氧化物半导体（CMOS）生产线的探索也在加速。图案化衬底上的选择性区域生长（SAG）成为一种有前景的方法，可实现GeSn激光/探测器的局部可控生长，适用于与硅基波导结构共集成或如焦平面阵列的独立模块。本文报道了成功实现Sn含量在3.2%至8.7%之间且光学质量良好的GeSn SAG，展示了可调谐的GeSn SAG光致发光和GeSn SAG光电导器件，后者探测截止波长可达2μm。此外，还对不同窗口尺寸（2μm至100μm）和形状（圆形、方形、八边形和矩形）的GeSn SAG条件进行了全面研究。揭示了负载效应的存在，即GeSn生长速率随图案填充因子和窗口尺寸减小而增加。这引入了与薄膜生长不同的生长条件，在非常小的窗口尺寸下会削弱或抑制Sn掺入，并在高Sn含量SAG生长中诱导Sn偏析。
英文摘要：
As germanium-tin (GeSn) epitaxial growth quality continuously improves, the search for an efficient integration strategy of GeSn optoelectronics devices into complementary metal-oxide-semiconductor (CMOS) manufacturing line also accelerates. Selective area growth (SAG) on patterned substrate emerges as a promising approach for this quest, with locally controlled growth of GeSn laser/detector suitable for either co-integration with silicon-based waveguide structure or stand-alone module like focal plane array. In this work, we report successful GeSn SAG with Sn content ranging from 3.2% to 8.7% of good optical quality, with demonstration of tunable GeSn SAG photoluminescence and GeSn SAG photoconductor device, the latter with detection cutoff wavelength up to 2 um. In addition, we present a comprehensive study of GeSn SAG condition at different window sizes, from 2 um to 100 um, and shapes: circle, square, octagon, and rectangle. Presence of loading effect is revealed, where GeSn growth rate increases as pattern fill factor and window size shrink. It introduces a different growth condition compared to thin film growth, which can weaken or inhibit Sn incorporation at very small window size and induce Sn segregation in high Sn content SAG growth.
